Abstract: A display substrate includes a first switching element, a second switching element, a first pixel electrode, a second pixel electrode, a main storage electrode and a sub-storage electrode. The first switching element is connected to a data line and a first gate line. The second switching element is connected to the data line and a second gate line adjacent to the first gate line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The main storage electrode is disposed in an area between the first pixel electrode and the second electrode to overlap with first ends of the first and second pixel electrodes. The sub-storage electrode is spaced apart from the first and second gate lines.

Abstract: A semiconductor device, a semiconductor module, an electronic apparatus and methods of fabricating and manufacturing the same are provided. The semiconductor device includes a lower interconnection formed on a substrate, a plurality of control patterns formed on the lower interconnection, a plurality of lower contact plug patterns formed on the control patterns, a plurality of storage patterns formed on the lower contact plug patterns, a plurality of upper electrodes formed on the storage patterns, and a plurality of upper interconnections formed on the upper electrodes. The lower contact plug patterns each include at least two contact holes having different sizes, a plurality of sidewall patterns formed on inner sidewalls of the two contact holes and wherein the sidewall patterns have different thicknesses from one another.

Abstract: A display apparatus includes a first substrate and a second substrate opposite to the first substrate. The first substrate includes a plurality of color pixels and a white pixel that outputs a second white light having a same gray scale as a first white light formed by mixing light outputted from the plurality of color pixel. The white pixel is activated by a second current that is lower than a first current that activates the color pixels.

Abstract: In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.

Abstract: In a memory device and in a method of programming the same, a memory device comprises: a plurality of memory cells, each memory cell comprising a resistance-changeable material that has an initial resistance that is determined in response to an applied programming current in a programming operation; and a modification circuit that modifies the resistance of the memory cell following a programming operation of the memory cell to vary the resistance of the memory cell from the initial resistance to a second resistance by applying a saturation current in a saturation operation. Each memory cell is connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation, that is used to apply the saturation current to the corresponding memory cell in the saturation operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a subsequent read operation.

Abstract: A phase change memory device and a method of forming the same include a conductive pattern formed on a substrate. A lower electrode contact is disposed on the conductive pattern. The phase change pattern is disposed on the lower electrode contact. An upper electrode is disposed on the phase change pattern. An area of an upper surface of the lower electrode contact is smaller than an area of a lower surface of the lower electrode contact.

Abstract: A semiconductor device, a semiconductor module, an electronic apparatus and methods of fabricating and manufacturing the same are provided. The semiconductor device includes a lower interconnection formed on a substrate, a plurality of control patterns formed on the lower interconnection, a plurality of lower contact plug patterns formed on the control patterns, a plurality of storage patterns formed on the lower contact plug patterns, a plurality of upper electrodes formed on the storage patterns, and a plurality of upper interconnections formed on the upper electrodes. The lower contact plug patterns each include at least two contact holes having different sizes, a plurality of sidewall patterns formed on inner sidewalls of the two contact holes and wherein the sidewall patterns have different thicknesses from one another.

Abstract: The present invention relates to the system, method and program for the pharmacokinetic parameter prediction of peptide sequence by the mathematical model. The present invention is comprising the steps of acquiring a variety of peptide sequence having specific features by the experimental technique; acquiring, on the basis of the sequence, a variety of peptide sequences lacking the specific features; storing the acquired peptide sequences as each set respectively, followed by randomly extracting peptide sequences in the constant ratio to divide into a training set and a test set of mathematical model; allowing individual peptide sequence descriptor values and an activity value; training the set of training peptide by mathematical model; predicting pharmacokinetic parameter of the set of test peptide by the trained mathematical model; and validating the trained mathematical model.

Abstract: Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.

Abstract: A display substrate includes a first switching element, a second switching element, a first pixel electrode, a second pixel electrode, a main storage electrode and a sub-storage electrode. The first switching element is connected to a data line and a first gate line. The second switching element is connected to the data line and a second gate line adjacent to the first gate line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The main storage electrode is disposed in an area between the first pixel electrode and the second electrode to overlap with first ends of the first and second pixel electrodes. The sub-storage electrode is spaced apart from the first and second gate lines.

Abstract: A phase change memory device and a method of forming the same include a conductive pattern formed on a substrate. A lower electrode contact is disposed on the conductive pattern. The phase change pattern is disposed on the lower electrode contact. An upper electrode is disposed on the phase change pattern. An area of an upper surface of the lower electrode contact is smaller than an area of a lower surface of the lower electrode contact.

Abstract: In a memory device and in a method of programming the same, a memory device comprises: a plurality of memory cells, each memory cell comprising a resistance-changeable material that has an initial resistance that is determined in response to an applied programming current in a programming operation; and a modification circuit that modifies the resistance of the memory cell following a programming operation of the memory cell to vary the resistance of the memory cell from the initial resistance to a second resistance by applying a saturation current in a saturation operation. Each memory cell is connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation, that is used to apply the saturation current to the corresponding memory cell in the saturation operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a subsequent read operation.

Abstract: An image forming apparatus including a scanning unit to scan an image and to output corresponding digital color coordinates; a determining unit to determine a local color gamut including the digital color coordinates, based on a reference matrix computed from a standard color gamut, which includes the local color gamut, and the plurality of digital color coordinates; a matrix selecting unit to select a color conversion matrix that corresponds to the determined local color gamut; and a computing unit to compute LAB color coordinates based on the selected color conversion matrix and the digital color coordinates. A method of color conversion using the image forming apparatus is also provided.

Abstract: Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.