Abstract: The present embodiments relate to a method and a device for obtaining location information of a terminal by using a mobile communication system and provide a method and a device capable of securing location and movement information of a terminal even when the terminal changes call settings or carries out a handover. In particular, a control information reception device according to the present disclosure comprises: one or more downlink signal reception units for receiving downlink signals from a base station; a control unit for obtaining control information about a terminal from the downlink signals; and a communication unit for transmitting the control information about the terminal to a location measurement server.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: Disclosed herein is a method of manufacturing a printed circuit board, the method including: preparing a base substrate having an insulating layer and a connection pad formed in the insulating layer; forming a photosensitive resist on the insulating layer; forming an opening part of which a side surface has a foot shape by patterning the photosensitive resist; forming a via hole exposing the connection pad by etching the insulating layer exposed by the opening part; and forming a via by filling the via hole.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.