Abstract: A method for fabricating a device is disclosed. The method includes providing a substrate; forming a thin film on the substrate; forming a photoresistable layer on the thin film; irradiating light onto the photoresistable layer through a photo mask having a transmissive region, a semi-transmissive region, a diffractive region and an interceptive region, and developing the photoresistable layer to form a photoresist pattern having at least three different thicknesses. With the above-described process, a liquid crystal display device (LCD), for example, can be manufactured using three photo masks.

Abstract: A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.

Abstract: A method for fabricating a device is disclosed. The method includes providing a substrate; forming a thin film on the substrate; forming a photoresistable layer on the thin film; irradiating light onto the photoresistable layer through a photo mask having a transmissive region, a semi-transmissive region, a diffractive region and an interceptive region, and developing the photoresistable layer to form a photoresist pattern having at least three different thicknesses. With the above-described process, a liquid crystal display device (LCD), for example, can be manufactured using three photo masks.

Abstract: A method of fabricating a liquid crystal display device includes steps of forming a first metal layer on the substrate to form a gate line including a gate electrode, a gate pad, and a first capacitor electrode, forming an insulating layer, an active layer, and a second metal layer on the substrate, patterning the second metal layer to form a data line including a data pad, a source electrode, a drain electrode, and a second capacitor electrode, forming a passivation layer to cover the second metal layer, forming a photoresist on the passivation layer, exposing the photoresist using a mask having a light shielding portion, a light transmissive portion, and a semi-transmissive portion, forming a first photoresist portion, a second photoresist portion, and a third photoresist portion, patterning the passivation layer, the active layer, and the insulating layer, and forming a pixel electrode on the passivation layer.

Abstract: A liquid crystal display device and a fabricating method thereof that are capable of preventing breakage of a pixel electrode. In the device, the protective layer pattern is provided at the overlapping area between the storage electrode and the pixel electrode to separate the storage electrode and the pixel electrode. Accordingly, the protective layer pattern is formed at the storage capacitor area to improve step coverage of a transparent conductive material.

Abstract: A method for fabricating a device is disclosed. The method includes providing a substrate; forming a thin film on the substrate; forming a photoresistable layer on the thin film; irradiating light onto the photoresistable layer through a photo mask having a transmissive region, a semi-transmissive region, a diffractive region and an interceptive region, and developing the photoresistable layer to form a photoresist pattern having at least three different thicknesses. With the above-described process, a liquid crystal display device (LCD), for example, can be manufactured using three photo masks.

Abstract: A liquid crystal display device and a fabricating method thereof that are capable of preventing breakage of a pixel electrode. In the device, the protective layer pattern is provided at the overlapping area between the storage electrode and the pixel electrode to separate the storage electrode and the pixel electrode. Accordingly, the protective layer pattern is formed at the storage capacitor area to improve step coverage of a transparent conductive material.

Abstract: A method of fabricating a liquid crystal display device includes steps of forming a first metal layer on the substrate to form a gate line including a gate electrode, a gate pad, and a first capacitor electrode, forming an insulating layer, an active layer, and a second metal layer on the substrate, patterning the second metal layer to form a data line including a data pad, a source electrode, a drain electrode, and a second capacitor electrode, forming a passivation layer to cover the second metal layer, forming a photoresist on the passivation layer, exposing the photoresist using a mask having a light shielding portion, a light transmissive portion, and a semi-transmissive portion, forming a first photoresist portion, a second photoresist portion, and a third photoresist portion, patterning the passivation layer, the active layer, and the insulating layer, and forming a pixel electrode on the passivation layer.

Abstract: A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.

Abstract: A method for fabricating a device is disclosed. The method includes providing a substrate; forming a thin film on the substrate; forming a photoresistable layer on the thin film; irradiating light onto the photoresistable layer through a photo mask having a transmissive region, a semi-transmissive region, a diffractive region and an interceptive region, and developing the photoresistable layer to form a photoresist pattern having at least three different thicknesses. With the above-described process, a liquid crystal display device (LCD), for example, can be manufactured using three photo masks.

Abstract: A method of fabricating a liquid crystal display device includes steps of forming a first metal layer on the substrate to form a gate line including a gate electrode, a gate pad, and a first capacitor electrode, forming an insulating layer, an active layer, and a second metal layer on the substrate, patterning the second metal layer to form a data line including a data pad, a source electrode, a drain electrode, and a second capacitor electrode, forming a passivation layer to cover the second metal layer, forming a photoresist on the passivation layer, exposing the photoresist using a mask having a light shielding portion, a light transmissive portion, and a semi-transmissive portion, forming a first photoresist portion, a second photoresist portion, and a third photoresist portion, patterning the passivation layer, the active layer, and the insulating layer, and forming a pixel electrode on the passivation layer.

Abstract: A method of fabricating a liquid crystal display device includes steps of forming a first metal layer on the substrate to form a gate line including a gate electrode, a gate pad, and a first capacitor electrode, forming an insulating layer, an active layer, and a second metal layer on the substrate, patterning the second metal layer to form a data line including a data pad, a source electrode, a drain electrode, and a second capacitor electrode, forming a passivation layer to cover the second metal layer, forming a photoresist on the passivation layer, exposing the photoresist using a mask having a light shielding portion, a light transmissive portion, and a semi-transmissive portion, forming a first photoresist portion, a second photoresist portion, and a third photoresist portion, patterning the passivation layer, the active layer, and the insulating layer, and forming a pixel electrode on the passivation layer.

Abstract: A liquid crystal display device and a fabricating method thereof that are capable of preventing breakage of a pixel electrode. In the device, the protective layer pattern is provided at the overlapping area between the storage electrode and the pixel electrode to separate the storage electrode and the pixel electrode. Accordingly, the protective layer pattern is formed at the storage capacitor area to improve step coverage of a transparent conductive material.

Abstract: A wiring structure in a semiconductor device includes a substrate; a first conductive layer on the substrate; a second conductive layer covering a portion of the first conductive layer, wherein another portion of the first conductive layer is not covered by the second conductive layer; an insulation layer on the first and second conductive layer; a penetrating part passing through the insulation layer from the uncovered portion of the first conductive layer; and a third conductive layer on the insulation layer, the third conductive layer connecting the penetrating part.

Abstract: A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.

Abstract: A method of fabricating a liquid crystal display device includes steps of forming a first metal layer on the substrate to form a gate line including a gate electrode, a gate pad, and a first capacitor electrode, forming an insulating layer, an active layer, and a second metal layer on the substrate, patterning the second metal layer to form a data line including a data pad, a source electrode, a drain electrode, and a second capacitor electrode, forming a passivation layer to cover the second metal layer, forming a photoresist on the passivation layer, exposing the photoresist using a mask having a light shielding portion, a light transmissive portion, and a semi-transmissive portion, forming a first photoresist portion, a second photoresist portion, and a third photoresist portion, patterning the passivation layer, the active layer, and the insulating layer, and forming a pixel electrode on the passivation layer.

Abstract: A wiring structure in a semiconductor device includes a substrate; a first conductive layer on the substrate; a second conductive layer covering a portion of the first conductive layer, wherein another portion of the first conductive layer is not covered by the second conductive layer; an insulation layer on the first and second conductive layer; a penetrating part passing through the insulation layer from the uncovered portion of the first conductive layer; and a third conductive layer on the insulation layer, the third conductive layer connecting the penetrating part.

Abstract: A wiring structure in a semiconductor device includes a substrate; a first conductive layer on the substrate; a second conductive layer covering a portion of the first conductive layer, wherein another portion of the first conductive layer is not covered by the second conductive layer; an insulation layer on the first and second conductive layer; a penetrating part passing through the insulation layer from the uncovered portion of the first conductive layer; and a third conductive layer on the insulation layer, the third conductive layer connecting the penetrating part.