Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

Abstract: The present invention relates to a cosmetic composition for whitening comprising a Caragana sinica root extract, and more specifically relates to a cosmetic composition having an outstanding skin-whitening effect, the composition comprising a Caragana sinica root extract, a fraction thereof or ?-viniferin isolated therefrom. In the present invention, the Caragana sinica root extract, fraction thereof or ?-viniferin isolated therefrom inhibits tyrosinase activity and suppresses melanin production and is therefore effective in skin whitening.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: The present invention relates to a cosmetic composition for whitening comprising a Caragana sinica root extract, and more specifically relates to a cosmetic composition having an outstanding skin-whitening effect, the composition comprising a Caragana sinica root extract, a fraction thereof or ?-viniferin isolated therefrom. In the present invention, the Caragana sinica root extract, fraction thereof or ?-viniferin isolated therefrom inhibits tyrosinase activity and suppresses melanin production and is therefore effective in skin whitening.

Abstract: The present invention relates to a steam generator and a washing machine therewith. The present invention provides a steam generator including a water chamber for holding water actually, the water chamber having a heater mounted thereto for heating the water, and a steam chamber for holding steam generated as the water is heated actually, wherein the water chamber has a vertical direction length (a vertical length) relatively greater than a horizontal direction length (a horizontal length).

Abstract: A method of manufacturing a flash memory device comprises forming a gate insulating layer on a semiconductor substrate, forming silicon seed crystals on a surface of the gate insulating layer by reacting a nitrogen or oxygen atmosphere gas and a silicon source gas, forming a first layer for a floating gate over the gate insulating layer and the silicon seed crystals by increasing an amount of the silicon source gas, and forming a second layer for a floating gate on the first layer for a floating gate.

Abstract: The present invention provides a washing machine and method of controlling a drying cycle thereof, by which a laundry can be evenly distributed within a drum rotated at a second speed for a low-speed dewatering cycle during the drying cycle to further enhance a drying effect. Once the drying cycle is initiated, a blower fan and heater are driven to circulate hot air within the washing machine via tub and circulation duct. And, the drum is rotated by applying a first rotational speed for a normal drying cycle and a second rotational speed for a low-speed dewatering cycle with a prescribed duty ratio.

Abstract: The present invention relates to a method of forming a flash memory device, which is capable of forming floating gates. According to a method of forming a flash memory device in accordance with the present invention, isolation mask patterns are first formed over a semiconductor substrate. Trenches are formed by performing an etching process using the isolation mask patterns. Isolation layers are formed between the isolation mask patterns, including the insides of the respective trenches. The isolation mask patterns are removed. Tunnel dielectric layers and crystallized first conductive layers are sequentially formed over the exposed semiconductor substrate. A dielectric layer and a second conductive layer are formed over the isolation layers and the first conductive layers.

Abstract: A drum washing machine having tub coupling structure includes a cabinet having a plurality of coupling holes each receiving a transit bolt on a rear surface thereof, a tub provided in the cabinet so as to store wash water therein and having a plurality of coupling members each coupled with the transit bolt on a rear surface thereof, and a condensing duct provided to be connected with a rear surface of the tub and having a through hole formed at a position corresponding to one of at least three coupling members of the tub so as to be communicated therewith, the through hole to which the transit bolt is inserted.

Abstract: A steam generator includes a water chamber for holding water, the water chamber having a heater mounted thereto for heating the water, a steam chamber for holding steam generated as the water is heated, a water supply line for supplying the water to the water chamber, and a steam discharge line for discharging steam from the steam chamber, wherein the water chamber has a vertical direction length relatively greater than a horizontal direction length and the steam chamber has a horizontal direction length relatively greater than the horizontal length of the water chamber. A dryer or washing machine may include the steam generator described herein.

Abstract: A dryer or a washing machine includes a cabinet which forms an exterior of the dryer or the washing machine. A drum is rotatably mounted in the cabinet and a steam generator is provided outside the drum to supply steam to the drum, where the steam generator includes a water chamber to hold water, the water chamber having a heater mounted thereto for heating the water. The steam chamber is provided above the water chamber to hold steam generated as the water is heated, where the steam chamber has a steam discharge opening for discharging the steam, where the steam discharge opening is provided with a separator for isolating a steam discharge area from other areas and where the water chamber has a vertical direction length relatively greater than a horizontal direction length.

Abstract: Structure of a driving unit in a drum type washing machine including a tub for storing washing water, a drum of a metal rotatably mounted inside of the tub disposed horizontal to the ground, or with an angle to the ground for accommodating laundry therein, a shaft connected to the drum mounted inside of the tub through the tub for transmission of a driving force of the motor to the drum, bearings fitted onto outer circumferences of both end portions of the shaft for supporting the shaft, a bearing housing having stator fastening bosses at fixed intervals along a circumference of a central portion thereof for supporting the bearings, a stator having a plurality of magnetic cores each formed by stacking magnetic laminations each having a salient pole projected outward in a radial direction and a rib projected inward in a radial direction, both of which are formed as one unit, frames of insulating material for covering top and bottom surfaces of a magnetic core assembly of the magnetic cores, and coils each woun

Abstract: Structure of a driving unit in a drum type washing machine including a tub for storing washing water, a drum of a metal rotatably mounted inside of the tub disposed horizontal to the ground, or with an angle to the ground for accommodating laundry therein, a shaft connected to the drum mounted inside of the tub through the tub for transmission of a driving force of the motor to the drum, bearings fitted onto outer circumferences of both end portions of the shaft for supporting the shaft, a bearing housing having stator fastening bosses at fixed intervals along a circumference of a central portion thereof for supporting the bearings, a stator having a plurality of magnetic cores each formed by stacking magnetic laminations each having a salient pole projected outward in a radial direction and a rib projected inward in a radial direction, both of which are formed as one unit, frames of insulating material for covering top and bottom surfaces of a magnetic core assembly of the magnetic cores, and coils each woun