Abstract: A resistance access memory device includes a first electrode, a resistance change layer, formed on the first electrode, comprising a thin film containing BiX13 and and Bi2X2(3-x), and a second electrode formed on the resistance change layer, where X1 is a halogen element selected from the group consisting of F, Cl, Br, I, and combinations thereof, X2 is a chalcogen element selected from the group consisting of S, Se, Te, and combinations thereof, and x is a real number of 0 or more and less than 3.

Abstract: The present application relates to a method for manufacturing an inverse opal structure membrane filter, the method comprising the steps of: preparing a mixed solution by mixing a nanoparticle dispersion solution and a sacrificial particle dispersion solution; applying the mixed solution onto a substrate to dry it; and heat-treating the mixed solution, wherein the surface of the sacrificial particles is modified by positive charges or negative charges.

Abstract: A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.

Abstract: The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIxBr3-x thin film (where 0?x?3) and/or a Cs2AgBiBrxI6-x thin film (where 0?x?6) having an elpasolite structure.

Abstract: A resistance access memory device includes a first electrode, a resistance change layer, formed on the first electrode, comprising a thin film containing BiX13 and and Bi2X2(3-x), and a second electrode formed on the resistance change layer, where X1 is a halogen element selected from the group consisting of F, Cl, Br, I, and combinations thereof, X2 is a chalcogen element selected from the group consisting of S, Se, Te, and combinations thereof, and x is a real number of 0 or more and less than 3.

Abstract: The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIxBr3-x thin film (where 0?x?3) and/or a Cs2AgBiBrxI6-x thin film (where 0?x?6) having an elpasolite structure.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Abstract: A wireless LED lamp having a multi-functional charger which includes an LED lamp having a male terminal unit that rotationally couples to a female unit of the charger. The charger charges a battery through a solar cell panel, home electricity and a vehicle cigar jack, so that the LED lamp can be wirelessly used as an indoor light or an outdoor lantern. The charger has a first charging port connected to DC 24 V and a second charging port connected to DC 12V. A regulator and a charging circuit to convert the DC 24V into DC 12V and to charge a battery with the DC 12V are embedded in the charger. The charger has a lamp controller to supply power to and control illumination of the LED lamp. The charger can be coupled to a portable appliance having a female terminal unit having the same shape as the LED lamp.

Abstract: This invention relates to a method of manufacturing an electrode for a secondary battery, which enables cost savings and the manufacture of products having various sizes and shapes. The method includes (A) preparing an electrode plate, (B) cutting the electrode plate to conform to the width of the electrode, thus providing a unit electrode plate, and (C) removing at least one of the corner regions of the unit electrode plate.

Abstract: This invention relates to a method of manufacturing an electrode for a secondary battery, which enables cost savings and the manufacture of products having various sizes and shapes. The method includes (A) preparing an electrode plate, (B) cutting the electrode plate to conform to the width of the electrode, thus providing a unit electrode plate, and (C) removing at least one of the corner regions of the unit electrode plate.