Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: Devices and methods related to film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator can be manufactured by a method that includes forming a first electrode having a first lateral shape and providing a piezoelectric layer on the first electrode. The method can further include forming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes. The forming of the first electrode and the forming of the second electrode can include selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.

Abstract: The present disclosure provides a method of manufacturing a hot stamping component, the method includes inserting a blank into a heating furnace, heating the blank, and transferring the heated blank from the heating furnace to a mold, wherein an air cooling time of the blank in the transferring of the blank satisfies Equation 1.

Abstract: A method of manufacturing a hot stamping includes: inserting a blank having a plating layer formed on at least one surface of a base material into a heating furnace having a plurality of sections having different temperature increase rate ranges; and multi-stage heating the blank gradually while passing through the plurality of sections. The plurality of sections include: a first heating section having a first average temperature increase rate change rate; a second heating section having a second average temperature increase rate change rate different from the first average temperature increase rate change rate; and a third heating section having a third average temperature increase rate change rate different from the first average temperature increase rate change rate and the second average temperature increase rate change rate. The third average temperature increase rate change rate includes a section in which a positive value is changed to a negative value.