Abstract: Disclosed herein is an apparatus and method for detecting an emotional change through facial expression analysis. The apparatus for detecting an emotional change through facial expression analysis includes a memory having at least one program recorded thereon, and a processor configured to execute the program, wherein the program includes a camera image acquisition unit configured to acquire a moving image including at least one person, a preprocessing unit configured to extract a face image of a user from the moving image and preprocess the extracted face image, a facial expression analysis unit configured to extract a facial expression vector from the face image of the user and cumulatively store the facial expression vector, and an emotional change analysis unit configured to detect a temporal location of a sudden emotional change by analyzing an emotion signal extracted based on cumulatively stored facial expression vector values.

Abstract: Disclosed is an apparatus and method for processing a multichannel audio signal. A multichannel audio signal processing method may include: generating an N-channel audio signal of N channels by down-mixing an M-channel audio signal of M channels; and generating a stereo audio signal by performing binaural rendering of the N-channel audio signal.

Abstract: A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.

Abstract: A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.