Abstract: An apparatus for drying a substrate may include a spin chuck, a drying chamber and a drying fluid line. The spin chuck may be configured to support the substrate. The spin chuck may rotate the substrate. The drying chamber may be configured to receive the spin chuck. The drying chamber may have an inlet, an outlet and a vortex exhaust. A drying fluid may be supplied through the inlet into the drying chamber. The drying fluid may be drained through the outlet. A vortex of the drying fluid may be drained through the vortex exhaust. The drying fluid line may be connected to the inlet.

Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.

Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.

Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.

Abstract: The invention relates to a chemical mechanical polishing system, comprising: at least one polishing platens rotatably installed with a platen pad mounted on its upper surface; a guide rail disposed along a predetermined path; a substrate carrier unit including a rotary union to downwardly press a substrate during a polishing process, the substrate carrier unit moving along the guide rail with loading the substrate; and a docking unit installed to be docked to the substrate carrier unit so as to supply air pressure to the rotary union which downwardly presses the substrate held by the substrate carrier unit, when the substrate carrier unit is positioned over the polishing platen, whereby even though the substrate carrier unit is moved to consecutively polish the substrate on the plural polishing platens, it substantially removes a phenomenon of the twisting of air pressure supply tubes due to the movement of the substrate carrier unit.

Abstract: A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.

Abstract: A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern.

Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.

Abstract: Provided are a conditioner of a chemical mechanical polishing apparatus for polishing a substrate over a platen pad that rotates and a method thereof. The conditioner includes a disk holder, a piston rod, a housing, and a load sensor. The disk holder secures a conditioning disk that finely cuts a surface of the platen pad. The piston rod delivers a normal force to the disk holder. The housing covers at least a portion of the piston rod. The load sensor is installed to receive the normal force that the piston rod delivers to the piston rod and measuring the normal force.

Abstract: An apparatus for drying a substrate may include a spin chuck, a drying chamber and a drying fluid line. The spin chuck may be configured to support the substrate. The spin chuck may rotate the substrate. The drying chamber may be configured to receive the spin chuck. The drying chamber may have an inlet, an outlet and a vortex exhaust. A drying fluid may be supplied through the inlet into the drying chamber. The drying fluid may be drained through the outlet. A vortex of the drying fluid may be drained through the vortex exhaust The drying fluid line may be connected to the inlet.

Abstract: A brush includes a roller body, a first brush layer and a second brush layer. The first brush layer covers an outer surface of the roller body. The second brush layer is on the first brush layer, and is thinner than the first brush layer. The rate of pore formation of the second layer is lower than the rate of pore formation of the first brush layer.

Abstract: Provided are a conditioner of a chemical mechanical polishing apparatus for polishing a substrate over a platen pad that rotates and a method thereof. The conditioner includes a disk holder, a piston rod, a housing, and a load sensor. The disk holder secures a conditioning disk that finely cuts a surface of the platen pad. The piston rod delivers a normal force to the disk holder. The housing covers at least a portion of the piston rod. The load sensor is installed to receive the normal force that the piston rod delivers to the piston rod and measuring the normal force.

Abstract: The invention relates to a chemical mechanical polishing system, comprising: at least one polishing platens rotatably installed with a platen pad mounted on its upper surface; a guide rail disposed along a predetermined path; a substrate carrier unit including a rotary union to downwardly press a substrate during a polishing process, the substrate carrier unit moving along the guide rail with loading the substrate; and a docking unit installed to be docked to the substrate carrier unit so as to supply air pressure to the rotary union which downwardly presses the substrate held by the substrate carrier unit, when the substrate carrier unit is positioned over the polishing platen, whereby even though the substrate carrier unit is moved to consecutively polish the substrate on the plural polishing platens, it substantially removes a phenomenon of the twisting of air pressure supply tubes due to the movement of the substrate carrier unit.

Abstract: A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.

Abstract: A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern.

Abstract: A carrier head of a chemical mechanical polishing apparatus has a support, an elastic membrane secured to the support and spaced from the bottom surface of the support so that a pressure chamber is defined between the membrane and the bottom surface of the support; and at least one annular barrier of elastic material extending from the bottom surface of the support. Each barrier has an annular partition portion that extends through the pressure chamber and divides the pressure chamber into respective pressure zones on opposite sides thereof, and an annular contact portion that abuts the membrane such that the barrier contacts the membrane but is not fixedly attached thereto. The contact portion includes a pair of annular flanges extending laterally in opposite directions at the lower end of the partition portion.

Abstract: An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber.

Abstract: An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber.

Abstract: The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and more particularly to a polishing apparatus having a workpiece transfer robot for transferring a workpiece from one operation to the next. The polishing apparatus according to the present invention comprises a polishing section including a top ring for holding a workpiece to be polished and a turntable having a polishing surface for polishing a surface of the workpiece held by the top ring; a cleaning section including a cleaning device for cleaning the workpiece that has been polished in the polishing section; and a workpiece transfer robot for transferring the workpiece to be polished to the polishing section or for transferring the workpiece that has been polished to the cleaning section.

Abstract: A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.