Abstract: In a mask for forming a fine pattern to completely transfer a first and a second pattern from the mask onto a receiving object, and a method of forming the mask, the mask includes a first pattern, a second pattern, and a supplemental pattern. The first pattern repeats in a first direction. The second pattern is arranged between and parallel to the first pattern and has a first width W1. The supplemental pattern is disposed between the first pattern and the second pattern, and is spaced apart by a first distance D1 in the first direction from the second pattern.

Abstract: Provided are a method and apparatus for designing a fine pattern that can be entirely transferred onto an object. The method includes reading the original data of a fine pattern for exposure. The fine pattern is divided into a first pattern not requiring revision and a second pattern requiring revision. The fine pattern is revised by forming an auxiliary pattern maintaining a first distance D1 from the second pattern. A fine pattern to be transferred onto a target object is estimated by running an emulation program including a first auxiliary pattern and a second auxiliary pattern. The estimated fine pattern is compared to the original data of the fine pattern for exposure, and the revised fine pattern is designated as a final fine pattern if there is no difference between the estimated fine pattern and the original data of the fine pattern for exposure.

Abstract: A method of adjusting pattern density includes determining a reference pattern density, defining dummy generation fields and designed patterns, forming basic dummy patterns on the dummy generation fields, evaluating a total pattern density from a sum of a density of the designed patterns and a density of the basic dummy patterns, adjusting a size of the basic dummy patterns so that the total pattern density reaches the reference pattern density, and combining data of the adjusted dummy patterns with data of the designed patterns.

Abstract: Dummy patterns are generated for a region of an integrated circuit that is divided into buckets by obtaining a local pattern density for a respective bucket and adjusting a density of the dummy pattern for the respective bucket as a continuously variable function of the respective local pattern density and a target density for the region. By providing a continuously variable dummy pattern density, the desired density of the dummy pattern group may be adjusted precisely, to thereby reduce or eliminate loading effects. The density of the dummy pattern for the respective bucket may be calculated according to a formula in which the density of the dummy pattern is continuously variable. The dummy patterns may include features of fixed pitch and a size of the features of fixed pitch is increased or decreased as a continuously variable function of the respective local pattern density and the target density for the region.

Abstract: Dummy patterns are generated for a region of an integrated circuit that is divided into buckets by obtaining a local pattern density for a respective bucket and adjusting a density of the dummy pattern for the respective bucket as a continuously variable function of the respective local pattern density and a target density for the region. By providing a continuously variable dummy pattern density, the desired density of the dummy pattern group may be adjusted precisely, to thereby reduce or eliminate loading effects. The density of the dummy pattern for the respective bucket may be calculated according to a formula in which the density of the dummy pattern is continuously variable. The dummy patterns may include features of fixed pitch and a size of the features of fixed pitch is increased or decreased as a continuously variable function of the respective local pattern density and the target density for the region.