Abstract: A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.

Abstract: The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.

Abstract: A nitride semiconductor light emitting device includes a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.

Abstract: The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.

Abstract: Disclosed herein are a nitride semiconductor light emitting device and a method of manufacturing the same. The nitride semiconductor light emitting device comprises a substrate for growing a gallium nitride-based semiconductor material, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer such that a predetermined portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer on the active layer, a transparent electrode layer on the p-type nitride semiconductor layer so as to be in an ohmic contact with the p-type nitride semiconductor layer, a p-side bonding pad in the form of a bi-layer of Ta/Au on the transparent electrode layer, and an n-side electrode in the form of a bi-layer of Ta/Au on the exposed portion of the n-type nitride semiconductor layer.