Abstract: A method of manufacturing a light-emitting diode (LED) chip including forming an LED on a first substrate, the LED including an N-type and a P-type semiconductor layer, the LED being formed to expose surfaces of the N-type and P-type semiconductor layers, forming bumps respectively electrically connected to the N-type and P-type semiconductor layers, forming electrode pads corresponding to the bumps on a second substrate, aligning the LED chip and the second substrate so that the bumps respectively correspond to the electrode pads, and increasing a temperature of the bumps to a first temperature, applying a pressure to the first and second substrates, and increasing the temperature of the bumps to a second temperature for a first time period while maintaining the pressure, and maintaining the second temperature from the first time period to a second time period while maintaining the pressure, and then releasing the pressure and cooling the bumps.

Abstract: A method of manufacturing a light-emitting diode (LED) chip including forming an LED on a first substrate, the LED including an N-type and a P-type semiconductor layer, the LED being formed to expose surfaces of the N-type and P-type semiconductor layers, forming bumps respectively electrically connected to the N-type and P-type semiconductor layers, forming electrode pads corresponding to the bumps on a second substrate, aligning the LED chip and the second substrate so that the bumps respectively correspond to the electrode pads, and increasing a temperature of the bumps to a first temperature, applying a pressure to the first and second substrates, and increasing the temperature of the bumps to a second temperature for a first time period while maintaining the pressure, and maintaining the second temperature from the first time period to a second time period while maintaining the pressure, and then releasing the pressure and cooling the bumps.

Abstract: The present invention is directed to a light emitting diode (LED) assembly and a method for fabricating the same. According to the present invention, there is provided an LED assembly comprising an LED comprising at least an N-type semiconductor layer and a P-type semiconductor layer; and bumps provided on the LED and electrically connected to the semiconductor layers, wherein the bump comprises a first region made of a gold (Au) compound including tin (Sn) and a second region made of gold.

Abstract: The present invention is directed to a light emitting diode (LED) assembly and a method for fabricating the same. According to the present invention, there is provided an LED assembly comprising an LED comprising at least an N-type semiconductor layer and a P-type semiconductor layer; and bumps provided on the LED and electrically connected to the semiconductor layers, wherein the bump comprises a first region made of a gold (Au) compound including tin (Sn) and a second region made of gold.