Abstract: A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.

Abstract: A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure.

Abstract: A light-emitting device may include separate, first and second light-emitting structures that are isolated from direct contact with each other on a phototransmissive substrate. Each light-emitting structure may include a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. The first and second light-emitting structures may be electrically connected to each other. An inter-structure conductive layer may electrically interconnect the first conductivity-type semiconductor layer of the first light-emitting structure to the second conductivity-type semiconductor layer of the second light-emitting structure. The second light-emitting structure may include a finger structure extending from an outer edge of the second light-emitting structure toward an interior of the second light-emitting structure.

Abstract: A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.

Abstract: An image sensor may include a photo diode, a transfer transistor configured to transfer a photo charge generated by the photo diode to a floating diffusion region and buried channel transistors electrically coupled to the transfer transistor, wherein each of the transistors have a buried channel. The noise of the image sensor may be reduced because a channel of the buried-channel transistors in the active pixel region may be formed apart from a defected surface of a substrate when the buried-channel transistors are turned on.

Abstract: Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and the external mirror is spaced from the laser chip to face the front side of the laser chip. The SHG crystal is located between the external mirror and the laser chip to double the frequency of the first wavelength light to make a second wavelength light. The lens element is located between the SHG crystal and the laser chip to allow the first wavelength light generated from the laser chip to converge at the SHG crystal, and the wavelength selective mirror is located between the SHG crystal and the lens element to transmit the first wavelength light and reflect the second wavelength light to the external mirror.

Abstract: Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and the external mirror is spaced from the laser chip to face the front side of the laser chip. The SHG crystal is located between the external mirror and the laser chip to double the frequency of the first wavelength light to make a second wavelength light. The lens element is located between the SHG crystal and the laser chip to allow the first wavelength light generated from the laser chip to converge at the SHG crystal, and the wavelength selective mirror is located between the SHG crystal and the lens element to transmit the first wavelength light and reflect the second wavelength light to the external mirror.

Abstract: A vertical external cavity surface emitting laser (VECSEL) is provided in which a pump laser beam is incident on a laser chip at a right angle. In the surface emitting laser, a laser chip emits light at a first wavelength by optical pumping, an external mirror is spaced apart from the laser chip to reflect the first wavelength light emitted from the laser chip back to the laser chip, a pump laser emits light at a second wavelength to cause the laser chip to lase, a wavelength selecting mirror is disposed between the laser chip and the external mirror to reflect the second wavelength light emitted from pump laser to the laser chip and to transmit the first wavelength light emitted from the laser chip, and an optical unit is disposed between the wavelength selecting mirror and the laser chip to focus the first wavelength light on an optical path between the external mirror and the wavelength selecting mirror and to focus the second wavelength light on the laser chip.