Patents by Inventor Jae-sang YUN

Jae-sang YUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240127869
    Abstract: A storage device having a multi drop structure is provided. The storage device comprises a storage controller configured to output a data signal, a first non-volatile memory configured to receive the data signal, a first wiring electrically connected to the storage controller and configured to transfer the data signal, a first termination module including a first impedance element that electrically connects the first wiring to at least one of a power voltage or a ground voltage, a second wiring electrically connected to the first wiring and configured to transfer the data signal to the first non-volatile memory, and a third wiring electrically connected to the first wiring and configured to transfer the data signal to the first termination module.
    Type: Application
    Filed: May 15, 2023
    Publication date: April 18, 2024
    Inventors: Jae-Sang Yun, Kwang Soo Park, Ji Woon Park, Bong Gyu Kang, Su-Jin Kim
  • Publication number: 20240098275
    Abstract: A method for decoding an image based on an intra prediction, comprising: obtaining a first prediction pixel of a first region in a current block by using a neighboring pixel adjacent to the current block; obtaining a second prediction pixel of a second region in the current block by using the first prediction pixel of the first region; and decoding the current block based on the first and the second prediction pixels.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 21, 2024
    Inventors: Je Chang JEONG, Ki Baek KIM, Won Jin LEE, Hye Jin SHIN, Jong Sang YOO, Jang Hyeok YUN, Kyung Jun LEE, Jae Hun KIM, Sang Gu LEE
  • Patent number: 11881279
    Abstract: A solid state drive (SSD) device, including a substrate; a first buffer chip disposed on the substrate; a second buffer chip disposed on the first buffer chip; a plurality of first nonvolatile memory chips connected to the second buffer chip through wire bonding; a controller configured to transmit a control signal to the plurality of first nonvolatile memory chips through a first channel; and a first redistribution layer disposed in the substrate and configured to electrically connect the first channel to the first buffer chip, wherein the first buffer chip is connected to the first redistribution layer through flip chip bonding, and the second buffer chip is connected to the first redistribution layer through a first wire.
    Type: Grant
    Filed: August 2, 2022
    Date of Patent: January 23, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji Woon Park, Jae-Sang Yun
  • Publication number: 20230393959
    Abstract: An out-of-band management method for a storage apparatus includes communicating with a micro controller unit of the storage apparatus by a baseboard management controller to obtain product information of the storage apparatus or status information of the storage apparatus and operating the storage apparatus by the baseboard management controller based on the obtained information.
    Type: Application
    Filed: May 3, 2023
    Publication date: December 7, 2023
    Inventors: YUFANG LI, BUMJUN KIM, NING LI, JAE-SANG YUN, LIU YANG, JAEHEON MA, RAN TAN, JISOOK HAN
  • Publication number: 20220414033
    Abstract: Disclosed is an electronic device which includes a plurality of memory devices, a memory controller, a first signal line that makes electrical connection between the memory controller and a first branch point, a second signal line that makes electrical connection between the first branch point and a second branch point, a third signal line that makes electrical connection between the first branch point and a third branch point, a fourth signal line that electrically connects the second branch point and the first memory device, a fifth signal line that electrically connects the second branch point and the second memory device, a sixth signal line that electrically connects the third branch point and the third memory device, and a stub that includes a first end electrically connected with at least one of the plurality of signal lines, and a second end being left open-circuit.
    Type: Application
    Filed: February 14, 2022
    Publication date: December 29, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kwangsoo PARK, Jae-Sang YUN, Su-Jin KIM, Jiwoon PARK
  • Publication number: 20220366940
    Abstract: A solid state drive (SSD) device, including a substrate; a first buffer chip disposed on the substrate; a second buffer chip disposed on the first buffer chip; a plurality of first nonvolatile memory chips connected to the second buffer chip through wire bonding; a controller configured to transmit a control signal to the plurality of first nonvolatile memory chips through a first channel; and a first redistribution layer disposed in the substrate and configured to electrically connect the first channel to the first buffer chip, wherein the first buffer chip is connected to the first redistribution layer through flip chip bonding, and the second buffer chip is connected to the first redistribution layer through a first wire.
    Type: Application
    Filed: August 2, 2022
    Publication date: November 17, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji Woon PARK, Jae-Sang YUN
  • Patent number: 11423950
    Abstract: A solid state drive (SSD) device, including a substrate; a first buffer chip disposed on the substrate; a second buffer chip disposed on the first buffer chip; a plurality of first nonvolatile memory chips connected to the second buffer chip through wire bonding; a controller configured to transmit a control signal to the plurality of first nonvolatile memory chips through a first channel; and a first redistribution layer disposed in the substrate and configured to electrically connect the first channel to the first buffer chip, wherein the first buffer chip is connected to the first redistribution layer through flip chip bonding, and the second buffer chip is connected to the first redistribution layer through a first wire.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: August 23, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji Woon Park, Jae-Sang Yun
  • Publication number: 20210090612
    Abstract: A solid state drive (SSD) device, including a substrate; a first buffer chip disposed on the substrate; a second buffer chip disposed on the first buffer chip; a plurality of first nonvolatile memory chips connected to the second buffer chip through wire bonding; a controller configured to transmit a control signal to the plurality of first nonvolatile memory chips through a first channel; and a first redistribution layer disposed in the substrate and configured to electrically connect the first channel to the first buffer chip, wherein the first buffer chip is connected to the first redistribution layer through flip chip bonding, and the second buffer chip is connected to the first redistribution layer through a first wire.
    Type: Application
    Filed: May 28, 2020
    Publication date: March 25, 2021
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji Woon PARK, Jae-Sang Yun
  • Patent number: 10747246
    Abstract: A power supply circuit includes a first comparator, a second comparator, a first voltage regulator, an output terminal, a first path and a second path. The first comparator compares a first input voltage with a first reference voltage to generate a first control signal. The second comparator compares a second input voltage with the first reference voltage to generate a second control signal. A voltage level of the second input voltage is different from a voltage level of the first input voltage. The first voltage regulator is selectively enabled based on the first control signal and the second control signal, and generates a first voltage based on the first input voltage. A voltage level of the first voltage is substantially the same as the voltage level of the second input voltage. The output terminal is configured to output one of the second input voltage and the first voltage as a power supply voltage. The first path directly provides the first input voltage to the first voltage regulator.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: August 18, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hee-Won Kang, In-Hyuk Go, Nam-Su Kim, Eun-Ji Moon, Jae-Sang Yun
  • Publication number: 20190377375
    Abstract: A power supply circuit includes a first comparator, a second comparator, a first voltage regulator, an output terminal, a first path and a second path. The first comparator compares a first input voltage with a first reference voltage to generate a first control signal. The second comparator compares a second input voltage with the first reference voltage to generate a second control signal. A voltage level of the second input voltage is different from a voltage level of the first input voltage. The first voltage regulator is selectively enabled based on the first control signal and the second control signal, and generates a first voltage based on the first input voltage. A voltage level of the first voltage is substantially the same as the voltage level of the second input voltage. The output terminal is configured to output one of the second input voltage and the first voltage as a power supply voltage. The first path directly provides the first input voltage to the first voltage regulator.
    Type: Application
    Filed: August 26, 2019
    Publication date: December 12, 2019
    Inventors: Hee-Won Kang, In-Hyuk Go, Nam-Su Kim, Eun-Ji Moon, Jae-Sang YUN
  • Patent number: 10437272
    Abstract: A power supply circuit includes a first comparator, a second comparator, a first voltage regulator, an output terminal, a first path and a second path. The first comparator compares a first input voltage with a first reference voltage to generate a first control signal. The second comparator compares a second input voltage with the first reference voltage to generate a second control signal. A voltage level of the second input voltage is different from a voltage level of the first input voltage. The first voltage regulator is selectively enabled based on the first control signal and the second control signal, and generates a first voltage based on the first input voltage. A voltage level of the first voltage is substantially the same as the voltage level of the second input voltage. The output terminal is configured to output one of the second input voltage and the first voltage as a power supply voltage. The first path directly provides the first input voltage to the first voltage regulator.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: October 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hee-Won Kang, In-Hyuk Go, Nam-Su Kim, Eun-Ji Moon, Jae-Sang Yun
  • Publication number: 20190072991
    Abstract: A power supply circuit includes a first comparator, a second comparator, a first voltage regulator, an output terminal, a first path and a second path. The first comparator compares a first input voltage with a first reference voltage to generate a first control signal. The second comparator compares a second input voltage with the first reference voltage to generate a second control signal. A voltage level of the second input voltage is different from a voltage level of the first input voltage. The first voltage regulator is selectively enabled based on the first control signal and the second control signal, and generates a first voltage based on the first input voltage. A voltage level of the first voltage is substantially the same as the voltage level of the second input voltage. The output terminal is configured to output one of the second input voltage and the first voltage as a power supply voltage. The first path directly provides the first input voltage to the first voltage regulator.
    Type: Application
    Filed: March 26, 2018
    Publication date: March 7, 2019
    Inventors: Hee-Won Kang, In-Hyuk Go, Nam-Su Kim, Eun-Ji Moon, Jae-Sang Yun
  • Patent number: 9671969
    Abstract: Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: June 6, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In Bo Shim, Jae-Sang Yun, Doo-Jin Yi, Young Joon Jang
  • Publication number: 20170060463
    Abstract: Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.
    Type: Application
    Filed: July 8, 2016
    Publication date: March 2, 2017
    Inventors: In Bo Shim, Jae-Sang Yun, Doo-Jin Yi, Young Joon Jang
  • Publication number: 20170018541
    Abstract: A memory system includes a package having a memory device, and a wiring board to which the package is attached. The wiring board includes a first region and a second region separable from the first region. The first region may conform in terms of its dimensions and other physical characteristics to a first form factor of the memory system, and the first and second regions collectively may conform in the same way to a second form factor of the memory system.
    Type: Application
    Filed: July 12, 2016
    Publication date: January 19, 2017
    Inventors: DOO-JIN YI, IN-BO SHIM, JAE-SANG YUN, YOUNG-JOON JANG
  • Publication number: 20120050904
    Abstract: A method and apparatus for compensating for a disturbance by detecting a periodic external disturbance applied to a data storage apparatus is provided. The method includes: calculating a correlation coefficient for a first signal corresponding to a first period and a second period that is adjacent to the first period generated from a servo control system of a data storage apparatus; estimating a disturbance of a third period by using the first signal of the first period; determining whether a periodic external shock is generated based on the calculated correlation coefficient; and if it is determined that the periodic external shock is generated, compensating for the disturbance to be generated in the third period by feed-forwarding the estimated disturbance of the third period to the servo control system.
    Type: Application
    Filed: August 24, 2011
    Publication date: March 1, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-won PARK, Soo-il CHOI, Jae-sang YUN