Patents by Inventor Jae-seob Rho

Jae-seob Rho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS image sensor and related method of operation
    Patent number: 7683304
    Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array unit having a matrix-type array of unit pixels, each unit pixel including a charge transfer element transferring charge collected in a photoelectric conversion element to a charge detection element. The charge transfer element also receives a boosted voltage signal higher than an external power voltage.
    Type: Grant
    Filed: October 2, 2007
    Date of Patent: March 23, 2010
    Assignee: Samsumg Electronics Co., Ltd.
    Inventors: Jung-hyun Nam, Jae-seob Rho
  • CMOS image sensor with boosted voltage signal and related method of operation
    Patent number: 7675015
    Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array unit having a matrix-type array of unit pixels, each unit pixel including a charge transfer element transferring charge collected in a photoelectric conversion element to a charge detection element. The charge transfer element also receives a boosted voltage signal higher than an external power voltage.
    Type: Grant
    Filed: November 7, 2005
    Date of Patent: March 9, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-hyun Nam, Jae-seob Rho
  • CMOS IMAGE SENSOR AND RELATED METHOD OF OPERATION
    Publication number: 20080042047
    Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array unit having a matrix-type array of unit pixels, each unit pixel including a charge transfer element transferring charge collected in a photoelectric conversion element to a charge detection element. The charge transfer element also receives a boosted voltage signal higher than an external power voltage.
    Type: Application
    Filed: October 2, 2007
    Publication date: February 21, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-hyun NAM, Jae-seob RHO
  • CMOS image sensor and related method of operation
    Publication number: 20060097132
    Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array unit having a matrix-type array of unit pixels, each unit pixel including a charge transfer element transferring charge collected in a photoelectric conversion element to a charge detection element. The charge transfer element also receives a boosted voltage signal higher than an external power voltage.
    Type: Application
    Filed: November 7, 2005
    Publication date: May 11, 2006
    Inventors: Jung-hyun Nam, Jae-seob Rho