Abstract: Provided are a display device and a method for manufacturing the same. According to one or more embodiments of the present disclosure, the display device includes a substrate, a bank on the substrate and comprising an opening, a pixel electrode and a common electrode spaced from each other on the substrate in the opening, an organic layer on the pixel electrode and the common electrode in the opening, a light emitting element on the organic layer, and comprising a first electrode and a second electrode on a top surface thereof, a first connection electrode connected to the pixel electrode and the first electrode of the light emitting element, and a second connection electrode connected to the common electrode and the second electrode of the light emitting element. The organic layer is on a bottom surface and at least a portion of one side surface of the light emitting element.

Abstract: The present disclosure relates to a transmission of an agricultural vehicle, the transmission including: a forward shift unit for performing shift with respect to drive transmitted from an engine of an agricultural vehicle; a clutch unit connected to the forward shift unit so as to selectively output drive transmitted from the forward shift unit; an adjustment unit connected to the clutch unit; and a backward shift unit connected to the adjustment unit so as to perform shift with respect to drive transmitted from the adjustment unit. The adjustment unit includes: a first adjustment mechanism connected to a first clutch mechanism included in the clutch unit; a second adjustment mechanism connected to a second clutch mechanism included in the clutch unit; and an integration mechanism connected to both the first adjustment mechanism and the second adjustment mechanism. The backward shift unit includes one backward shift mechanism connected to the integration mechanism.

Abstract: The present disclosure relates to semiconductor memory devices. An example semiconductor memory device includes a cell region and a peripheral circuit region electrically connected with the cell region. The cell region includes a plurality of gate electrodes spaced apart from each other and stacked in a vertical direction, and a channel structure extending through the plurality of gate electrodes in the vertical direction. The peripheral circuit region includes a substrate, a first element isolation structure, a first gate structure on the first active region, a second element isolation structure, a second gate structure on the second active region, a third element isolation structure, and a third gate structure on the third active region. The third element isolation structure includes a first element isolation pattern and a second element isolation pattern. The first element isolation pattern and the second element isolation pattern include different materials from each other.

Abstract: Embodiments of the present disclosure relate to a method and system for producing refined hydrocarbons from waste plastic pyrolysis oil. The method and system for producing refined hydrocarbons from waste plastic pyrolysis oil according to the embodiments of the present disclosure may minimize formation of an ammonium salt (NH4Cl) and may prevent an adhesion phenomenon of impurity particles in a reactor in a refining process of waste plastic pyrolysis oil containing impurities including chlorine and nitrogen. In addition, the method and system for producing refined hydrocarbons according to the embodiments of the present disclosure may have excellent refining efficiency and may implement a long-term operation of a process because deactivation of a catalyst used in the process is prevented and may produce refined hydrocarbons having a low content of impurities and a high octane number from waste plastic pyrolysis oil.

Abstract: A semiconductor chip includes a semiconductor device connected between a first node to which a power supply voltage is applied and a second node to which a ground voltage is applied, a first ring oscillator connected to the first node through a first supply switch and the second node through a first ground switch and a second ring oscillator connected to the first node through a second supply switch and the second node through a second ground switch, wherein the first supply and ground switches are configured to operate in response to a first control signal, thereby operating the first ring oscillator, and the second supply and ground switches are configured to operate in response to a second control signal, thereby operating the second ring oscillator.

Abstract: Proposed is a method for product recommendation by a server. The method may include receiving a gift recommendation request from a first user terminal for a second user, checking available basic information of the second user, and determining a first recommendation information based on the basic information, wherein the first recommendation information comprises a first recommendation reason and at least one product related to the first recommendation reason. The method may also include determining a second recommendation information not based on the basic information, wherein the second recommendation information comprises a second recommendation reason and at least one product related to the second recommendation reason. The method may further include providing recommendation information comprising the first and second recommendation information to the first user terminal. The first recommendation information may be prioritized for display over the second recommendation information.

Abstract: A mixed refrigerant composition includes carbon dioxide (R-744), 2,3,3,3-tetrafluoropropene (R-1234yf) and 1,1-difluoroethane (R-152a). A content of the carbon dioxide (R-744) ranges from 1 to 10 wt. % based on a total weight of the mixed refrigerant composition, and a content of the 2,3,3,3-tetrafluoropropene (R-1234yf) ranges from 65 to 95 wt. % based on the total weight of the mixed refrigerant composition, and a content of the 1,1-difluoroethane (R-152a) ranges from 1 to 30 wt. % based on the total weight of the mixed refrigerant composition. A boiling point at 1 atm of the mixed refrigerant composition ranges from ?65 to ?30° C.

Abstract: A mixed refrigerant composition includes carbon dioxide (R-744), 2,3,3,3-tetrafluoropropene (R-1234yf) and trifluoroiodomethane (R-13I1). A content of the carbon dioxide (R-744) ranges from 1 to 10 wt. % based on a total weight of the mixed refrigerant composition, and a sum of a content of the 2,3,3,3-tetrafluoropropene (R-1234yf) and a content of the trifluoroiodomethane (R-13I1) ranges from 90 to 99 wt. % based on the total weight of the mixed refrigerant composition. A boiling point at 1 atm of the mixed refrigerant composition ranges from ?76 to ?35° C.

Abstract: A semiconductor memory device comprises a cell structure and a peripheral circuit structure electrically connected to the cell structure. The peripheral circuit structure comprises an active region, a first gate structure comprising a first gate insulating layer intersecting the active region and in contact with the active region, a second gate structure comprising a second gate insulating layer spaced apart from the first gate structure, and in contact with the active region, and a source/drain region between the first gate structure and the second gate structure. A thickness of the first gate insulating layer is less than a thickness of the second gate insulating layer. The source/drain region comprises a first region adjacent to the first gate structure and a second region adjacent to the second gate structure. A depth of the first region is equal to a depth of the second region.

Abstract: A circuit board according to an embodiment includes a first substrate layer; and a second substrate layer disposed on the first substrate layer and including a cavity, wherein the cavity of the second substrate layer includes a first part disposed adjacent to an upper surface of the second substrate layer and having a first inclination such that a width gradually decreases toward a lower surface of the second substrate layer; and a second part disposed below the first part adjacent to the lower surface of the second substrate layer and having a second inclination such that a width gradually decreases toward the lower surface of the second substrate layer, and the first inclination of the first part relative to a bottom surface of the cavity is greater than the second inclination of the second part relative to the bottom surface of the cavity, and a vertical length of the first part is different from a vertical length of the second part.

Abstract: Disclosed are an authentication information processing method and apparatus and a user terminal including an authentication information processing method and apparatus. The authentication information processing method performed by the disclosed authentication information processing apparatus comprises the steps of: obtaining biometric information of a user; obtaining a unique key corresponding to the authentication information processing apparatus; and generating an authentication key by using at least a part of the biometric information and at least a part of the unique key.

Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: An insert configured to be assembled to a tool for cutting a workpiece, includes: an upper surface including first to fourth upper corner portions formed in respective quadrants divided by a first imaginary vertical axis and a first imaginary horizontal axis that are perpendicular to each other; and a lower surface formed below the upper surface in a height direction and including first to fourth lower corner portions formed in respective quadrants divided by a second imaginary vertical axis and a second imaginary horizontal axis that are perpendicular to each other. A lower ridge portion protruding downward in the height direction is formed on the lower surface, and extends across the second and fourth lower corner portions, which are symmetrical with respect to a center of the lower surface.

Abstract: The present invention discloses a thermal fatigue crack generator for a large pipe. According to the present invention, the thermal fatigue crack generator for a large pipe precisely manages and controls the heating and cooling conditions for the large size test pipes having a diameter of 250 to 610 mm to significantly improve the reliability of the accuracy and a reproducibility of the thermal fatigue cycle so that a useful advantage is expected to ensure the reliability and the effectiveness of the skill verification of the non-destructive testing.

Abstract: An insert configured to be assembled to a tool for cutting a workpiece, includes: an upper surface including first to fourth upper corner portions formed in respective quadrants divided by a first imaginary vertical axis and a first imaginary horizontal axis that are perpendicular to each other; and a lower surface formed below the upper surface in a height direction and including first to fourth lower corner portions formed in respective quadrants divided by a second imaginary vertical axis and a second imaginary horizontal axis that are perpendicular to each other.

Abstract: A cooling device for a reducing agent injection module, includes a reducing agent injection module installed in an exhaust pipe to inject a reducing agent into the exhaust pipe and having a module cooling channel therein through which a coolant flows to cool the reducing agent injection module, a coolant pump configured to supply the coolant to the module cooling channel, a coolant circulation line including a coolant supply line and a coolant recovery line to connect the coolant pump and the module cooling channel, and a coolant recovery portion installed in the coolant recovery line to store the coolant flowing through the reducing agent injection module and positioned higher than the reducing agent injection module along a gravitational direction.

Abstract: A selective catalytic reduction system includes a reducing agent injection module installed in an exhaust pipe through which an exhaust gas is discharged from an engine and configured to inject a reducing agent into the exhaust pipe, a temperature calculator configured to calculate a temperature of the reducing agent injection module using temperature-related information of the reducing agent injection module, and a temperature controller configured to control to increase a reducing agent injection amount of the reducing agent injection module when the calculated temperature.

Abstract: A cooling device for a reducing agent injection module, includes a reducing agent injection module installed in an exhaust pipe to inject a reducing agent into the exhaust pipe and having a module cooling channel therein through which a coolant flows to cool the reducing agent injection module, a coolant pump configured to supply the coolant to the module cooling channel, a coolant circulation line including a coolant supply line and a coolant recovery line to connect the coolant pump and the module cooling channel, and a coolant recovery portion installed in the coolant recovery line to store the coolant flowing through the reducing agent injection module and positioned higher than the reducing agent injection module along a gravitational direction.