Patents by Inventor Jae Shin

Jae Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12381529
    Abstract: Methods of manufacturing bulk acoustic wave resonators are disclosed. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: August 5, 2025
    Assignee: Skyworks Global Pte. Ltd.
    Inventors: Kwang Jae Shin, Jiansong Liu, Jong Duk Han, Jae Hyung Lee, Yiliu Wang, Yosuke Hamaoka, Alexandre Augusto Shirakawa, Benfeng Zhang
  • Publication number: 20250247079
    Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a substrate, a lid, a resonator, and an inductor. The lid has a first side facing the substrate and a second side opposite the first side. The lid is coupled to the substrate. The resonator is positioned between the substrate and the lid. The inductor is formed with the lid. The inductor is at least partially positioned over a portion of the resonator.
    Type: Application
    Filed: January 22, 2025
    Publication date: July 31, 2025
    Inventors: Stefan Bader, Kwang Jae Shin, Atsushi Takano, Jae Hyung Lee, Nan Wu, Yiliu Wang, Alexandre Augusto Shirakawa
  • Publication number: 20250247070
    Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a substrate, a resonator and an inductor. The substrate has a first side and a second side opposite the first side. The resonator is positioned over the first side of the substrate. The inductor is formed with the substrate. At least a portion of the inductor is disposed on the second side of the substrate.
    Type: Application
    Filed: January 22, 2025
    Publication date: July 31, 2025
    Inventors: Stefan Bader, Kwang Jae Shin, Atsushi Takano, Jae Hyung Lee, Nan Wu, Yiliu Wang, Alexandre Augusto Shirakawa
  • Patent number: 12375054
    Abstract: A packaged acoustic wave component has a device substrate and a metal layer disposed over the device substrate. An acoustic wave device is disposed over at least a portion of the metal layer so that the metal layer is interposed between the device substrate and at least a portion of the acoustic wave device. A cap substrate is spaced above the device substrate, and peripheral wall that is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the acoustic wave device. One or more vias extend through the device substrate and are disposed under the metal layer.
    Type: Grant
    Filed: March 22, 2022
    Date of Patent: July 29, 2025
    Assignee: Skyworks Global Pte. Ltd.
    Inventors: Alexandre Augusto Shirakawa, Kwang Jae Shin, Yiliu Wang, Taecheol Shon
  • Patent number: 12375059
    Abstract: A bulk acoustic resonator can include a piezoelectric layer implemented between first and second electrodes with respective lateral shapes. The first and second lateral shapes can be selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.
    Type: Grant
    Filed: February 27, 2024
    Date of Patent: July 29, 2025
    Assignee: SKYWORKS GLOBAL PTE. LTD.
    Inventors: Jae Myoung Jhung, Jae Hyung Lee, Kwang Jae Shin, Myung Hyun Park
  • Publication number: 20250239210
    Abstract: A display device can include a display panel with a plurality of sub-pixels disposed therein, and a gate driving circuit configured to output a gate signal to the plurality of sub-pixels. The gate driving circuit includes a pull-up transistor controlled by a voltage level of a Q-node, a pull-down transistor configured by a voltage level of a QB-node, a dual carry circuit configured to output a forward carry signal in accordance with the voltage levels of the Q-node and the QB-node in forward driving and output a backward carry signal in accordance with the voltage levels of the Q-node and the QB-node in backward driving, and a clock input circuit configured to apply a forward clock signal to the Q-node when a forward start signal is input and apply a backward clock signal to the Q-node when a backward start signal is input.
    Type: Application
    Filed: September 20, 2024
    Publication date: July 24, 2025
    Applicant: LG Display Co., Ltd.
    Inventors: Min June JANG, Hong Jae SHIN
  • Patent number: 12368427
    Abstract: Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.
    Type: Grant
    Filed: March 12, 2024
    Date of Patent: July 22, 2025
    Assignee: Skyworks Global Pte. Ltd.
    Inventors: Kwang Jae Shin, Jiansong Liu, Jong Duk Han, Jae Hyung Lee, Yiliu Wang, Yosuke Hamaoka, Alexandre Augusto Shirakawa, Benfeng Zhang
  • Patent number: 12361895
    Abstract: A display apparatus according to the present invention comprises a substrate including a display area having a plurality of sub-pixels and non-display area surrounding the display area; a shielding layer on the substrate; a driving transistor in the sub-pixel above the shielding layer, the driving transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode; a light emitting diode in each sub-pixel; and a plurality of signal lines in the non-display area; wherein the signal line includes a first line and a second line, the first line being made of same material as the shielding layer, and the second line being made of same material as the gate electrode.
    Type: Grant
    Filed: February 27, 2024
    Date of Patent: July 15, 2025
    Assignee: LG Display Co., Ltd.
    Inventors: Su-Jin Hwang, Mi-Young Son, Hong-Jae Shin
  • Patent number: 12364029
    Abstract: An image sensing device includes an upper substrate configured to include a pixel region and a first peripheral region located outside the pixel region, a lower substrate configured to include a logic region and a second peripheral region located outside the logic region, the logic region configured to generate an image based on the electrical signals from the unit pixels, light reception elements disposed over the upper substrate and configured to transmit the incident light to the pixel region, an insulation layer disposed between the upper substrate and the lower substrate, a light reception alignment mark disposed in the first peripheral region and configured to assist positioning of the light reception elements, and an alignment pattern disposed between the first peripheral region and the second peripheral region and in the insulation layer. The alignment pattern is configured to absorb light used to measure the light reception alignment mark.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: July 15, 2025
    Assignee: SK HYNIX INC.
    Inventors: Seok Jae Shin, Woo Yung Jung, Jae Hyun Park
  • Patent number: 12355372
    Abstract: The present invention relates to a neuro-stimulator, and more particularly, to a rotational triboelectric nanogenerator for a neuro-stimulator providing, as a device that may directly utilize nerve stimulation triboelectricity generated by rotational energy for nerve electrical stimulation, a device that may adjust waveforms and stimulation parameters of electricity generated during frictional contact through a combination of various materials with triboelectric properties and patterns of materials and electrodes, implement various nerve stimulation parameters by adjusting an external rotational speed or a distance between friction layers, does not require complicated circuits or voltages and batteries to drive the batteries, and may be driven through relatively small volume, inexpensive materials, a simple structure, and a simple operation method.
    Type: Grant
    Filed: May 31, 2023
    Date of Patent: July 8, 2025
    Assignee: DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Hoon Lee, Min Seok Kang, Hee Jae Shin
  • Publication number: 20250219607
    Abstract: A bulk acoustic wave device is disclosed. The bulk acoustic wave device can include a first electrode, a second electrode including a first layer and a second layer, a piezoelectric layer between the first and second electrodes, and a temperature compensation layer between the first and second layers of the second electrode.
    Type: Application
    Filed: December 11, 2024
    Publication date: July 3, 2025
    Inventors: Ahmed E. Hassanien, Kwang Jae Shin
  • Publication number: 20250219615
    Abstract: Aspects and embodiments disclosed herein include a bulk acoustic wave resonator comprising a layer of piezoelectric material and one of a top electrode disposed on top of the layer of piezoelectric material or a bottom electrode disposed on a bottom of the layer of piezoelectric material, the one of the top electrode or the bottom electrode including a Bragg pair having alternating layers of a first metal and a second metal.
    Type: Application
    Filed: December 17, 2024
    Publication date: July 3, 2025
    Inventors: Benjamin Paul Abbott, Alexandre Augusto Shirakawa, David Albert Feld, Stefan Bader, Kwang Jae Shin
  • Publication number: 20250219608
    Abstract: Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure. The multi-gradient raised frame structure includes a first raised frame layer and a second raised frame layer. The second raised frame layer extends beyond the first raised frame layer. The second raised frame layer is tapered on opposing sides.
    Type: Application
    Filed: March 18, 2025
    Publication date: July 3, 2025
    Inventors: Benfeng Zhang, Jiansong Liu, Benjamin Paul Abbott, Kwang Jae Shin, Alexandre Augusto Shirakawa
  • Publication number: 20250211188
    Abstract: Aspects of this disclosure relate to a method of manufacturing a bulk acoustic wave device that includes forming a piezoelectric layer over an electrode such that the piezoelectric layer has a greater magnitude effective piezoelectric coefficient in a main acoustically active region of the bulk acoustic wave device than in a peripheral region of the bulk acoustic wave device. Related bulk acoustic wave devices, filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
    Type: Application
    Filed: December 19, 2024
    Publication date: June 26, 2025
    Inventors: Yanbo He, Wan Wan, Kwang Jae Shin, Zongliang Cao
  • Publication number: 20250211192
    Abstract: Aspects of this disclosure relate to a bulk acoustic wave device that includes a temperature compensation layer and a piezoelectric layer that is less piezoelectric in a peripheral region than in an acoustically active region. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
    Type: Application
    Filed: December 19, 2024
    Publication date: June 26, 2025
    Inventors: Yanbo He, Kwang Jae Shin, Zongliang Cao
  • Publication number: 20250211194
    Abstract: Aspects of this disclosure relate to a bulk acoustic wave device that includes a frame structure in a peripheral region. The bulk acoustic wave device includes a piezoelectric layer having a different structure in a main acoustically active region of the bulk acoustic wave device than in the peripheral region. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
    Type: Application
    Filed: December 19, 2024
    Publication date: June 26, 2025
    Inventors: Yanbo He, Wan Wan, Kwang Jae Shin, Zongliang Cao
  • Publication number: 20250211193
    Abstract: Aspects of this disclosure relate to a bulk acoustic wave device that includes an engineered piezoelectric layer. In certain embodiments, the bulk acoustic wave device includes a raised frame structure in a raised frame region. The raised frame structure can be positioned around a main acoustically active region of the bulk acoustic wave device. The bulk acoustic wave device can include a piezoelectric layer that is less piezoelectric in the raised frame region than in the main acoustically active region. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
    Type: Application
    Filed: December 19, 2024
    Publication date: June 26, 2025
    Inventors: Yanbo He, Wan Wan, Kwang Jae Shin, Zongliang Cao
  • Publication number: 20250211195
    Abstract: Aspects of this disclosure relate to a method of manufacturing a bulk acoustic wave device that includes forming a piezoelectric layer over different materials in different regions of the bulk acoustic wave device. The piezoelectric layer can be formed over first material in a main acoustically active region and over a second material in a peripheral region of the bulk acoustic wave device such that the piezoelectric layer has a different structure in the peripheral region than in the main acoustically active region. Related bulk acoustic wave devices, filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
    Type: Application
    Filed: December 19, 2024
    Publication date: June 26, 2025
    Inventors: Yanbo He, Wan Wan, Kwang Jae Shin, Zongliang Cao
  • Publication number: 20250211189
    Abstract: Disclosed is a bulk acoustic wave resonator including a piezoelectric material layer comprising alternating layers of AlxSc1?xN and one of AlyGa1?yN or AlyIn1?yN, 0<x<1, 0<y<1 and methods of forming same.
    Type: Application
    Filed: December 17, 2024
    Publication date: June 26, 2025
    Inventors: Michael David Hill, Kwang Jae Shin, Stefan Bader, Alexandre Augusto Shirakawa, Martha Kennedy Small
  • Patent number: 12341486
    Abstract: Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.
    Type: Grant
    Filed: March 20, 2024
    Date of Patent: June 24, 2025
    Assignee: Skyworks Global Pte. Ltd.
    Inventors: Kwang Jae Shin, Jiansong Liu