Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer including a recessed region and a protruding region, an active layer and a second conductivity-type semiconductor layer on the protruding region, a reflective electrode layer disposed on the second conductivity-type semiconductor layer, an insulating layer including a first opening disposed on a contact region of the first conductivity-type semiconductor layer and a second opening disposed on a contact region of the reflective electrode layer, a first conductive pattern disposed on the insulating layer, and extending into the first opening to be electrically connected to the contact region of the first conductivity-type semiconductor layer, a second conductive pattern disposed on the insulating layer, and extending into the second opening to be electrically connected to the reflective electrode layer, and a multilayer insulating structure covering the first and second conductive patterns.

Abstract: A system for storing and moving data based on the location of a user or a change in location of a user is described herein. Data associated with a user may be stored at one or more storage devices associated with a location of the user. Some or all of the data associated with the user may be moved to one or more other storage devices if, for example, the user moves to a different location or is expected to move to a different location, so that the user's data may be more efficiently accessed by the user.

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.

Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.

Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.

Abstract: A light-emitting device includes a light-emitting chip having a first surface and a second surface. A first light reflection pattern is formed on the second surface. A plurality of terminals are disposed to be connected to the light-emitting chip by passing through the first light reflection pattern. A second light reflection pattern is formed on side surfaces of the light-emitting chip and the first light reflection pattern. A light-transmitting pattern is formed between the light-emitting chip and the second light reflection pattern and extends between the first light reflection pattern and the second light reflection pattern. A wavelength conversion layer is formed on the first surface of the light-emitting chip.

Abstract: A system for storing and moving data based on the location of a user or a change in location of a user is described herein. Data associated with a user may be stored at one or more storage devices associated with a location of the user. Some or all of the data associated with the user may be moved to one or more other storage devices if, for example, the user moves to a different location or is expected to move to a different location, so that the user's data may be more efficiently accessed by the user.

Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.

Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.

Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.

Abstract: A semiconductor light-emitting device includes a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a reflective electrode layer covering a top surface of the second semiconductor layer; an insulating structure covering a region of the top surface of the second semiconductor layer, the region being around the reflective electrode layer; a first interconnection conductive layer contacting a contact region of the first semiconductor layer through the insulating structure and, together with the insulating structure, constituting an omni-directional reflector (ODR) structure; and a second interconnection conductive layer contacting the reflective electrode layer through the insulating structure.

Abstract: A system for storing and moving data based on the location of a user or a change in location of a user is described herein. Data associated with a user may be stored at one or more storage devices associated with a location of the user. Some or all of the data associated with the user may be moved to one or more other storage devices if, for example, the user moves to a different location or is expected to move to a different location, so that the user's data may be more efficiently accessed by the user.

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

Abstract: A mobile storage system is disclosed that in one aspect identifies a geographical location change of a user, such as movement from a first geographical location to a second geographical location. In response, the mobile storage system may move the user's information to a storage device associated with the second geographical location so that the user's information may be accessed by the user more efficiently.

Abstract: Provided is a semiconductor light emitting device.

Abstract: There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.

Abstract: A communications access point may provide access to a wireless communications network to a user device located at a first location. The communications access point may determine that the user device is moving from the first location to a second location where access to the wireless network is limited or not available. In response to the determination, the communications access point may provide access to the wireless network at the second location by extending a coverage area of the wireless network.

Abstract: There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.

Abstract: Provided is a semiconductor light emitting device.