Abstract: Disclosed is a dry etching apparatus for etching a film coated on a semiconductor substrate. An electrostatic chuck on which the semiconductor substrate is disposed is provided in a chamber carrying out an etching process. The electrostatic chuck is elevated to perform the etching process and moved downwardly to load and unload the semiconductor substrate. When the chuck is elevated, a peripheral surface of the chuck faces an inner edge of a baffle plate mounted on the inner surface of the chamber. A reaction byproduct created for the etching process and a non-reacted gas are discharged through slits formed in the baffle plate from the chamber. Accordingly, as the baffle plate is not moved along with the chuck, the reaction byproduct attached to the baffle plate cannot be exfoliated.

Abstract: Disclosed is a dry etching apparatus for etching a film coated on a semiconductor substrate. An electrostatic chuck on which the semiconductor substrate is disposed is provided in a chamber carrying out an etching process. The electrostatic chuck is elevated to perform the etching process and moved downwardly to load and unload the semiconductor substrate. When the chuck is elevated, a peripheral surface of the chuck faces an inner edge of a baffle plate mounted on the inner surface of the chamber. A reaction byproduct created for the etching process and a non-reacted gas are discharged through slits formed in the baffle plate from the chamber. Accordingly, as the baffle plate is not moved along with the chuck, the reaction byproduct attached to the baffle plate cannot be exfoliated.