Abstract: A modified conjugated diene-based polymer, a method of making the same, and a rubber composition including the same are disclosed herein. The modified conjugated diene-based polymer has excellent processability and good tensile strength and viscoelasticity. In some embodiments, a modified conjugated diene-based polymer includes a first chain including a repeating unit derived from a conjugated diene-based monomer, a second chain including a repeating unit derived from a compound represented by Formula 1 or Formula 2, and a derived unit from an alkoxysilane-based modifier, wherein the first chain and the second chain are coupled by the derived unit from the modifier.

Abstract: A modified conjugated diene-based polymer and a rubber composition including the same are disclosed herein. The modified conjugated diene-based polymer has excellent processability and good tensile strength and viscoelasticity. In some embodiments, a modified conjugated diene-based polymer includes silicon (Si) and nitrogen (N), and has an N content of 150 ppm or more based on the weight of the modified conjugated diene-based polymer and a rate of change of mooney viscosity (MVR) of 20% or less.

Abstract: A rubber composition having excellent abrasion resistance and improved viscoelasticity properties, and a tire manufactured using the same are disclosed herein. In some embodiments, a rubber composition includes a first synthetic rubber and a second synthetic rubber, and has an interaction parameter (?blend) defined by Mathematical Formula 1 at room temperature is 2.0×10?3 or more. The first synthetic rubber is a solution-polymerized modified conjugated diene-based rubber which has a 1,2-vinyl bond content of 50 wt % or more and includes a functional group bonded to at least one terminal, and the second synthetic rubber is a conjugated diene-based rubber which has a 1,2-vinyl bond content of less than 50 wt %.

Abstract: The present invention relates to a rubber composition having excellent abrasion resistance and improved tensile and viscoelastic properties by controlling compatibility among rubber components, and a tire manufactured using the same.

Abstract: The disclosed invention relates to a wind power generation device for a window trim frame, the wind power generation device: enabling alignment and provision in a prefabricated manner so as to fit the size of a window trim frame or the window frame of a general house or a building such that the installation thereof is simplified; manufactured in a small size such that purchase and production costs are relatively lower than those of other power generation facilities and the like; and charging, with produced electric energy, a storage battery provided at the end thereof and, simultaneously, enabling a charging completion to be immediately checked, thereby easily being used.

Abstract: The disclosed invention relates to a wind power generation device for a window trim frame, the wind power generation device: enabling alignment and provision in a prefabricated manner so as to fit the size of a window trim frame or the window frame of a general house or a building such that the installation thereof is simplified; manufactured in a small size such that purchase and production costs are relatively lower than those of other power generation facilities and the like; and charging, with produced electric energy, a storage battery provided at the end thereof and, simultaneously, enabling a charging completion to be immediately checked, thereby easily being used.

Abstract: The present invention relates to a rubber composition having excellent abrasion resistance and improved tensile properties and viscoelasticity properties by controlling compatibility among rubber components, and a tire manufactured using the same.

Abstract: The present invention provides a semiconductor manufacturing apparatus having a slit valve control system including first and second process chambers disposed adjacent to each other, a slit aperture disposed between the first and second chambers, a slit valve to open and close the slit aperture between first and second chambers, an air source to operate the slit valve, a pressure supply flow path connecting the slit valve with the air source, and a pressure regulator installed on the supply flow path to regulate pressure supplied from the air source to the slit valve.

Abstract: A bitmap manager, a method of allocating a bitmap memory, a method of generating an acknowledgement between network entities, and a network entity implementing the same. The bitmap manager may include a bitmap memory for storing a block acknowledge of received frames based on a bitmap, a bitmap management information controller for receiving a bitmap entry number and storing bitmap management information associated with the physical address of the bitmap memory, and a bitmap manager finite state machine (BM FSM), receiving an update or an extract request for the received frames, managing the bitmap management information, and updating or extracting the bitmap memory.

Abstract: A bitmap manager, a method of allocating a bitmap memory, a method of generating an acknowledgement between network entities, and a network entity implementing the same. The bitmap manager may include a bitmap memory for storing a block acknowledge of received frames based on a bitmap, a bitmap management information controller for receiving a bitmap entry number and storing bitmap management information associated with the physical address of the bitmap memory, and a bitmap manager finite state machine (BM FSM), receiving an update or an extract request for the received frames, managing the bitmap management information, and updating or extracting the bitmap memory.

Abstract: A method of controlling a plasma etching apparatus comprises loading a wafer into a chamber containing an electrostatic chuck, securing the wafer to the electrostatic chuck, performing a process on the wafer, removing the wafer from the electrostatic chuck, and unloading the wafer from the chamber. The wafer is secured to the electrostatic chuck by applying a high voltage to the electrostatic chuck. The wafer is removed from the electrostatic chuck by disconnecting the high voltage from the electrostatic chuck, applying radio frequency power to the chamber to generate a de-chucking plasma from a reaction gas in the chamber, and applying bias power to the electrostatic chuck to increase the energy of ions in the de-chucking plasma, thereby removing excess electrical charges from the wafer.

Abstract: The present invention provides a semiconductor manufacturing apparatus having a slit valve control system including first and second process chambers disposed adjacent to each other, a slit aperture disposed between the first and second chambers, a slit valve to open and close the slit aperture between first and second chambers, an air source to operate the slit valve, a pressure supply flow path connecting the slit valve with the air source, and a pressure regulator installed on the supply flow path to regulate pressure supplied from the air source to the slit valve.

Abstract: Provided is a wireless communication device and method aggregating MAC service data units (MSDUs). The wireless communication device (STA) can aggregate a plurality of small-sized MSDUs downloaded from an upper layer into one MAC frame in a MAC layer, transmit the aggregated single frame via a physical layer, and receive and process a data frame having the same frame structure transmitted from another communication device. To aggregate MSDUs into a single frame, a MAC frame structure, communication schemes between communication devices and between an AP and a communication device, and a transmission/reception queue management scheme are newly define.

Abstract: A beacon having a traffic indication map (TIM) and information concerning a beacon interval is generated. The generated beacon is transmitted to stations prior to lapse of Point Coordination Function Interframe Space (PCF IFS) after detecting the condition of the channel. The beacon is transmitted prior to the lapse of PIFS from the time of detecting the condition of the channel to the stations. Therefore, the beacon is transmitted to the stations prior to a frame having a data is transmitted to the stations.

Abstract: An induction magnet for use in semiconductor device manufacturing equipment is formed of an insulating magnetic material. The semiconductor device manufacturing equipment may include a reaction chamber having a plasma region in which plasma is produced, a substrate support disposed in the reaction chamber, a gas supplier that sprays reaction gas uniformly towards the substrate support, and a power supply for supplying a high frequency that excites the reaction gas to produce plasma in the plasma region. The induction magnet is disposed around the plasma region at the outside of the reaction chamber. Because of the composition of the induction magnet, the semiconductor manufacturing equipment does not overheat even though power having a high frequency is applied to the induction magnet. As a result, the semiconductor device manufacturing equipment can perform a manufacturing process with a high degree of productivity.