Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

Abstract: An image sensor includes a photoelectric converter in a pixel area of a substrate to generate photoelectrons in response to an incident light that is incident onto the pixel area, a signal generator on a first surface of the substrate in the pixel area to generate electric signals corresponding to image information of an object in accordance with the photoelectrons, and a pixel separation pattern penetrating through the substrate from the first surface of the substrate to a second surface of the substrate opposite to the first surface of the substrate, the pixel separation pattern including an insulation pattern having a refractive index smaller than that of the substrate and a metallic conductive pattern enclosed by the insulation pattern, and the pixel area being enclosed by the pixel separation pattern and isolated from a neighboring pixel area.

Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.

Abstract: An image sensor includes a plurality of photo diodes disposed at a semiconductor substrate, and a splitter disposed on the photo diodes. The splitter splits an incident light depending on a wavelength so that split light of different colors enters different photo diodes, respectively. The splitter includes a first pattern structure having a cross-sectional structure in which a plurality of refractive layer patterns are deposited in a lateral direction.

Abstract: An image sensor includes a photoelectric converter in a pixel area of a substrate to generate photoelectrons in response to an incident light that is incident onto the pixel area, a signal generator on a first surface of the substrate in the pixel area to generate electric signals corresponding to image information of an object in accordance with the photoelectrons, and a pixel separation pattern penetrating through the substrate from the first surface of the substrate to a second surface of the substrate opposite to the first surface of the substrate, the pixel separation pattern including an insulation pattern having a refractive index smaller than that of the substrate and a metallic conductive pattern enclosed by the insulation pattern, and the pixel area being enclosed by the pixel separation pattern and isolated from a neighboring pixel area.

Abstract: An image sensor includes a plurality of photo diodes disposed at a semiconductor substrate, and a splitter disposed on the photo diodes. The splitter splits an incident light depending on a wavelength so that split light of different colors enters different photo diodes, respectively. The splitter includes a first pattern structure having a cross-sectional structure in which a plurality of refractive layer patterns are deposited in a lateral direction.

Abstract: An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.

Abstract: An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.

Abstract: A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

Abstract: A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

Abstract: A method of manufacturing a semiconductor device can uniformly form a metal gate irrespective of gate pattern density. The method includes forming an interlayer dielectric layer having a trench on a substrate, forming a metal layer having first, second and third sections extending along the sides of the trench, the bottom of the trench and on the interlayer dielectric layer, respectively, forming a sacrificial layer pattern exposing an upper part of the first section of the metal layer, forming a spacer pattern on the exposed part of the first section of the metal layer, and forming a first gate metal layer by etching the first section of the metal layer using the sacrificial layer pattern and the spacer pattern as masks.