Patents by Inventor Jae Sung Hyun
Jae Sung Hyun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11945798Abstract: Provided are aminopyridine compounds and pharmaceutically acceptable compositions thereof which exhibit inhibition activity against certain mutated forms of EGFR.Type: GrantFiled: August 26, 2022Date of Patent: April 2, 2024Assignees: YUHAN CORPORATION, JANSSEN BIOTECH, INC.Inventors: Hyunjoo Lee, Su Bin Choi, Young Ae Yoon, Kwan Hoon Hyun, Jae Young Sim, Marian C. Bryan, Scott Kuduk, James Campbell Robertson, Jaekyoo Lee, Paresh Devidas Salgaonkar, Byung-Chul Suh, Jong Sung Koh, So Young Hwang
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Patent number: 10497828Abstract: A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.Type: GrantFiled: February 27, 2018Date of Patent: December 3, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Tan Sakong, Byoung-kyun Kim, Jin-young Lim, Jae-sung Hyun
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Publication number: 20190123237Abstract: A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.Type: ApplicationFiled: February 27, 2018Publication date: April 25, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Tan SAKONG, Byoung-kyun Kim, Jin-young Lim, Jae-sung Hyun
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Patent number: 10236414Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a first conductive semiconductor layer including a plurality of V-shaped recesses; an active layer on the first conductive semiconductor layer along a shape of the plurality of V-shaped recesses; a second conductive semiconductor layer on the active layer; a reflection assisting layer on the second conductive semiconductor layer; and a reflection layer on the reflection assisting layer, wherein a thickness of the second conductive semiconductor layer is 45 nm to 100 nm.Type: GrantFiled: September 28, 2017Date of Patent: March 19, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Yul Lee, Jung Kyu Park, Jae Sung Hyun
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Patent number: 10109763Abstract: A light-emitting device that may be manufactured includes an n-type semiconductor layer including a first dopant on a substrate, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer including a second dopant on the active layer. The light-emitting device may be formed according to at least one of a first layering process and a second layering process. The first layering process may include implanting the first dopant into the n-type semiconductor layer into the n-type semiconductor layer according to an ion-implantation process, and the second layering process may include implanting the second dopant into the p-type semiconductor layer according to an ion-implantation process. Forming a semiconductor layer that includes an ion-implanted dopant may include thermally annealing the semiconductor layer subsequent to the ion implantation.Type: GrantFiled: November 21, 2016Date of Patent: October 23, 2018Assignee: Samsung Electronics Co., LTD.Inventors: Jae-sung Hyun, Dong-yul Lee, Jung-kyu Park
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Publication number: 20180145216Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a first conductive semiconductor layer including a plurality of V-shaped recesses; an active layer on the first conductive semiconductor layer along a shape of the plurality of V-shaped recesses; a second conductive semiconductor layer on the active layer; a reflection assisting layer on the second conductive semiconductor layer; and a reflection layer on the reflection assisting layer, wherein a thickness of the second conductive semiconductor layer is 45 nm to 100 nm.Type: ApplicationFiled: September 28, 2017Publication date: May 24, 2018Inventors: Dong Yul LEE, Jung Kyu PARK, Jae Sung HYUN
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Publication number: 20170263808Abstract: A light-emitting device that may be manufactured includes an n-type semiconductor layer including a first dopant on a substrate, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer including a second dopant on the active layer. The light-emitting device may be formed according to at least one of a first layering process and a second layering process. The first layering process may include implanting the first dopant into the n-type semiconductor layer into the n-type semiconductor layer according to an ion-implantation process, and the second layering process may include implanting the second dopant into the p-type semiconductor layer according to an ion-implantation process. Forming a semiconductor layer that includes an ion-implanted dopant may include thermally annealing the semiconductor layer subsequent to the ion implantation.Type: ApplicationFiled: November 21, 2016Publication date: September 14, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Jae-sung HYUN, Dong-yul LEE, Jung-kyu PARK
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Patent number: 9490391Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.Type: GrantFiled: June 4, 2015Date of Patent: November 8, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Hyun Lee, Min Hwan Kim, Eun Deok Sim, Ji Heon Oh, Heon Ho Lee, Ho Chul Lee, Jae Sung Hyun
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Patent number: 9362447Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.Type: GrantFiled: October 7, 2014Date of Patent: June 7, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Hyun Lee, Sang Heon Han, Suk Ho Yoon, Jae Sung Hyun
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Patent number: 9337391Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.Type: GrantFiled: March 18, 2015Date of Patent: May 10, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jai Won Jean, Min Hwan Kim, Eun Deok Sim, Jong Hyun Lee, Heon Ho Lee, Ho Chul Lee, Jae Sung Hyun
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Publication number: 20160111595Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.Type: ApplicationFiled: June 4, 2015Publication date: April 21, 2016Inventors: Jong Hyun LEE, Min Hwan KIM, Eun Deok SIM, Ji Heon OH, Heon Ho LEE, Ho Chul LEE, Jae Sung HYUN
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Publication number: 20160043279Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.Type: ApplicationFiled: March 18, 2015Publication date: February 11, 2016Inventors: Jai Won JEAN, Min Hwan KIM, Eun Deok SIM, Jong Hyun LEE, Heon Ho LEE, Ho Chul LEE, Jae Sung HYUN
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Publication number: 20150200332Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.Type: ApplicationFiled: October 7, 2014Publication date: July 16, 2015Inventors: Jong Hyun LEE, Sang Heon HAN, Suk Ho YOON, Jae Sung HYUN
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Patent number: 9018618Abstract: There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers.Type: GrantFiled: October 28, 2014Date of Patent: April 28, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Hyun Lee, Ki Ho Park, Suk Ho Yoon, Sang Heon Han, Jae Sung Hyun
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Publication number: 20150048394Abstract: A light emitting device package includes a body including a lead frame part, and a light emitting laminate disposed on the body and electrically connected to the lead frame part to emit light. The light emitting laminate has a multilayer structure in which a plurality of light emitting devices are stacked. In the plurality of light emitting devices, an upper light emitting device is stacked on a lower light emitting device such that vertex portions of the upper light emitting device do not overlap and are offset from vertex portions of the lower light emitting device, and portions of the lower light emitting device are externally exposed.Type: ApplicationFiled: June 5, 2014Publication date: February 19, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Wook SHIM, Young Sun KIM, Jae Sung HYUN
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Publication number: 20140326944Abstract: A method of manufacturing a nitride semiconductor light emitting device includes forming a first conductivity type nitride semiconductor layer. An active layer is formed on the first conductivity type nitride semiconductor layer. A second conductivity type nitride semiconductor layer is formed on the active layer. In the forming of the active layer, quantum well layers and quantum barrier layers are alternatively stacked and at least two dopant layers are formed inside of at least one of the quantum well layers. The dopant layers are doped with a dopant in a predetermined concentration.Type: ApplicationFiled: February 27, 2014Publication date: November 6, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Wook SHIM, Jin Young LIM, Jae Sung HYUN
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Publication number: 20140231746Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer includes a first impurity region including a p-type impurity and a second impurity region including an n-type impurity. The first and second impurity regions are alternately repeated at least once.Type: ApplicationFiled: November 18, 2013Publication date: August 21, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae Sung HYUN, Hyun Wook SHIM, Jin Young LIM
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Patent number: 8716694Abstract: A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0?x<1, 0<y?1) and each of the plurality of quantum well layers contains a different indium (In) content. And, among the plurality of quantum barrier layers, a quantum barrier layer adjacent to a quantum well layer having a higher indium (In) content is thicker than a quantum barrier layer adjacent to a quantum well layer having a lower indium (In) content.Type: GrantFiled: December 6, 2012Date of Patent: May 6, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Heon Han, Jeong Wook Lee, Jae Sung Hyun, Jin Young Lim, Dong Joon Kim, Young Sun Kim