Patents by Inventor Jae Wan Kwon

Jae Wan Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11890616
    Abstract: The subject matter described herein relates to devices and methods for capturing micrometer scale objects from a fluid flow, and more particularly, to devices and methods for capturing cells. The devices generally comprise an array of posts configured and arranged to selectively direct the micrometer scale objects toward trapping channels defined between posts in which the micrometer scale objects can be trapped, and to direct smaller particles through bypass channels around the posts. Methods for using the devices to trap cells, analyze cells and treat cancer are also described.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: February 6, 2024
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Jussuf Kaifi
  • Patent number: 11551932
    Abstract: The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: January 10, 2023
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Quang Nguyen
  • Patent number: 11515161
    Abstract: Doped nitride-based semiconductor materials and methods of producing these materials are described herein.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: November 29, 2022
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, John Gahl, John Brockman
  • Publication number: 20220185032
    Abstract: A method for predicting tire wear in an apparatus mounted in a vehicle may include importing a tire wear database generated based on basic data, generating a dataset by preprocessing the basic data, classifying the dataset for each vehicle driving method, optimizing a hyper parameter for machine learning based on the classified dataset, and predicting a tire wear lifespan of the vehicle by performing machine learning on the optimized hyper parameter.
    Type: Application
    Filed: September 9, 2021
    Publication date: June 16, 2022
    Applicants: Hyundai Motor Company, Kia Corporation
    Inventors: Jae Han CHOI, Jae Wan KWON
  • Patent number: 10938045
    Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules via radiolysis and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: March 2, 2021
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Baek Hyun Kim
  • Publication number: 20200402802
    Abstract: The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.
    Type: Application
    Filed: June 18, 2020
    Publication date: December 24, 2020
    Applicant: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Quang Nguyen
  • Publication number: 20200365406
    Abstract: Doped nitride-based semiconductor materials and methods of producing these materials are described herein.
    Type: Application
    Filed: April 17, 2020
    Publication date: November 19, 2020
    Applicant: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, John Gahl, John Brockman
  • Publication number: 20200306759
    Abstract: The subject matter described herein relates to devices and methods for capturing micrometer scale objects from a fluid flow, and more particularly, to devices and methods for capturing cells. The devices generally comprise an array of posts configured and arranged to selectively direct the micrometer scale objects toward trapping channels defined between posts in which the micrometer scale objects can be trapped, and to direct smaller particles through bypass channels around the posts. Methods for using the devices to trap cells, analyze cells and treat cancer are also described.
    Type: Application
    Filed: March 26, 2020
    Publication date: October 1, 2020
    Inventors: JAE WAN KWON, JUSSUF KAIFI
  • Publication number: 20200220187
    Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules via radiolysis and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.
    Type: Application
    Filed: December 20, 2019
    Publication date: July 9, 2020
    Inventors: Jae Wan Kwon, Baek Hyun Kim
  • Patent number: 10706983
    Abstract: A method of producing an integrated circuit-type active radioisotope battery, the method comprising exposing at least a portion of an electronically functional, unactivated integrated circuit-type battery to radiation to convert transmutable material in the unactivated battery to a radioisotope thereby producing an active cell and thus the integrated circuit-type active radioisotope battery.
    Type: Grant
    Filed: April 13, 2015
    Date of Patent: July 7, 2020
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, John Michel Gahl, Bradley Ryan Nullmeyer
  • Patent number: 10566638
    Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: February 18, 2020
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Baek Hyun Kim
  • Patent number: 10128111
    Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized non-zinc metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer at low temperature on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: November 13, 2018
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Baek Hyun Kim
  • Patent number: 10083770
    Abstract: A solid-state high energy-density micro radioisotope power source device including a dielectric and radiation shielding body having an internal cavity, a first electrode disposed a first end of the cavity, and a second electrode disposed at an opposing second end of the cavity and spaced apart from the first electrode such that a micro chamber is provided therebetween.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: September 25, 2018
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Tongtawee Wacharasindhu, John David Robertson
  • Publication number: 20180047570
    Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.
    Type: Application
    Filed: October 11, 2017
    Publication date: February 15, 2018
    Applicant: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Baek Hyun Kim
  • Patent number: 9805928
    Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: October 31, 2017
    Assignee: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Baek Hyun Kim
  • Publication number: 20170237365
    Abstract: An electrostatic power generation fiber comprising a thread-shaped core that comprises a conductive component; a charge building-inducting-tunneling layer on the core that comprises a contact electrification material. An embodiment of the present invention is directed to an electrostatic power generation fiber comprising: (a) a thread-shaped core that comprises a conductive component; and (b) a charge building-inducting-tunneling layer on the core that comprises a contact electrification material; wherein electrical charge, formed via contact electrification of the charge building-inducting-tunneling layer, travels along the core, which during electrostatic power generation the core is a constituent of an electrical network.
    Type: Application
    Filed: August 17, 2015
    Publication date: August 17, 2017
    Inventors: Jae Wan KWON, Quang NGUYEN, Baek Hyun KIM
  • Publication number: 20170032862
    Abstract: A method of producing an integrated circuit-type active radioisotope battery, the method comprising exposing at least a portion of an electronically functional, unactivated integrated circuit-type battery to radiation to convert transmutable material in the unactivated battery to a radioisotope thereby producing an active cell and thus the integrated circuit-type active radioisotope battery.
    Type: Application
    Filed: April 13, 2015
    Publication date: February 2, 2017
    Inventors: Jae Wan Kwon, John Michel Gahl, Bradley Ryan Nullmeyer
  • Publication number: 20160268131
    Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.
    Type: Application
    Filed: March 3, 2016
    Publication date: September 15, 2016
    Applicant: The Curators of the University of Missouri
    Inventors: Jae Wan Kwon, Baek Hyun Kim
  • Publication number: 20150364781
    Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.
    Type: Application
    Filed: January 31, 2014
    Publication date: December 17, 2015
    Inventors: Jae Wan Kwon, Baek Hyun Kim
  • Patent number: 8851103
    Abstract: The present disclosure provides a mini-scale microfluidic valve including a valve housing disposed at a fluid dispensing orifice of a mini-scale microfluidic system dispensing nozzle. The valve housing comprises a base member having a base member orifice that aligns with the fluid dispensing orifice to provide a fluid dispensing pathway through which a system-fluid is dispensed from the system dispensing nozzle to an external ambient environment. The housing additionally comprises an open valve channel exposed to the external ambient environment and intersecting the fluid dispensing pathway. The valve further includes a liquid-film movably disposed within the open valve channel such that the liquid-film is exposed to the external ambient environment. The liquid-film comprises a substantially non-volatile, immiscible liquid, and a valve control subsystem structured and operable to control movement of the liquid-film within the open valve channel to selectively cover and uncover the base member orifice.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: October 7, 2014
    Assignee: The Curators of the University of Missouri
    Inventor: Jae Wan Kwon