Abstract: A method of controlling a display device includes rendering a plurality of viewpoint images, generating a plurality of sub-images based on the plurality of viewpoint images and a plurality of mapping pattern images corresponding to the plurality of viewpoint images, generating a single light-field image based on the plurality of sub-images, and outputting the single light-field image.

Abstract: A display device includes a substrate including a display area and a peripheral area disposed around the display area. The peripheral area includes a bending region and a contact region adjacent to the bending region. A first connection line includes a first portion disposed in the contact region, and a second portion disposed in both the bending region and the contact region, and including a first layer and a second layer. At least part of the second layer of the second portion overlaps the first layer of the second portion. In the contact region, the first layer of the second portion is electrically connected to the first portion, and the second layer of the second portion is electrically connected to the first layer of the second portion.

Abstract: A display device includes a substrate having a pixel area and a peripheral area, a plurality of pixels disposed on the substrate in the pixel area, a plurality of data lines that supply a plurality of data signals to the pixels, a plurality of scan lines that supply a plurality of scan signals to the pixels, a plurality of power supply lines that supply a first voltage to the pixels, and first through third insulating layers. The first insulating layer is disposed on the substrate, the second insulating layer is disposed on the first insulating layer, and the third insulating layer is disposed on the second insulating layer. The scan lines are disposed below the third insulating layer on the substrate in the pixel area, and are disposed on the third insulating layer in the peripheral area.

Abstract: The subject matter described herein relates to devices and methods for capturing micrometer scale objects from a fluid flow, and more particularly, to devices and methods for capturing cells. The devices generally comprise an array of posts configured and arranged to selectively direct the micrometer scale objects toward trapping channels defined between posts in which the micrometer scale objects can be trapped, and to direct smaller particles through bypass channels around the posts. Methods for using the devices to trap cells, analyze cells and treat cancer are also described.

Abstract: The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.

Abstract: Doped nitride-based semiconductor materials and methods of producing these materials are described herein.

Abstract: A method for predicting tire wear in an apparatus mounted in a vehicle may include importing a tire wear database generated based on basic data, generating a dataset by preprocessing the basic data, classifying the dataset for each vehicle driving method, optimizing a hyper parameter for machine learning based on the classified dataset, and predicting a tire wear lifespan of the vehicle by performing machine learning on the optimized hyper parameter.

Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules via radiolysis and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.

Abstract: The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.

Abstract: Doped nitride-based semiconductor materials and methods of producing these materials are described herein.

Abstract: The subject matter described herein relates to devices and methods for capturing micrometer scale objects from a fluid flow, and more particularly, to devices and methods for capturing cells. The devices generally comprise an array of posts configured and arranged to selectively direct the micrometer scale objects toward trapping channels defined between posts in which the micrometer scale objects can be trapped, and to direct smaller particles through bypass channels around the posts. Methods for using the devices to trap cells, analyze cells and treat cancer are also described.

Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules via radiolysis and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.

Abstract: A method of producing an integrated circuit-type active radioisotope battery, the method comprising exposing at least a portion of an electronically functional, unactivated integrated circuit-type battery to radiation to convert transmutable material in the unactivated battery to a radioisotope thereby producing an active cell and thus the integrated circuit-type active radioisotope battery.

Abstract: A radiolytic electrochemical system that comprises a cathode, an anode that comprises a semiconductor, an aqueous electrolyte solution disposed between the cathode and anode, and ionizing radiation, wherein the ionizing radiation splits water molecules and forms solvated free radicals that migrate to the anode or cathode, depending upon a radical's charge, and participate in redox reactions at the anode and cathode thereby producing electrical current capable of performing work when the anode and cathode are electrically connected.

Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized non-zinc metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer at low temperature on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.

Abstract: A solid-state high energy-density micro radioisotope power source device including a dielectric and radiation shielding body having an internal cavity, a first electrode disposed a first end of the cavity, and a second electrode disposed at an opposing second end of the cavity and spaced apart from the first electrode such that a micro chamber is provided therebetween.

Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.

Abstract: The present invention provides a method to manufacture nanowires. In various embodiments, a method is provided for producing an oxidized metal layer as a heterogeneous seed layer on arbitrary substrate for controlled nanowire growth is disclosed which comprises depositing a metal layer on a substrate, oxidizing the metal layer in air ambient or in oxidizing agent, and growing nanowires at low temperatures on oxidized metal layers on virtually any substrate.

Abstract: An electrostatic power generation fiber comprising a thread-shaped core that comprises a conductive component; a charge building-inducting-tunneling layer on the core that comprises a contact electrification material. An embodiment of the present invention is directed to an electrostatic power generation fiber comprising: (a) a thread-shaped core that comprises a conductive component; and (b) a charge building-inducting-tunneling layer on the core that comprises a contact electrification material; wherein electrical charge, formed via contact electrification of the charge building-inducting-tunneling layer, travels along the core, which during electrostatic power generation the core is a constituent of an electrical network.

Abstract: A method of producing an integrated circuit-type active radioisotope battery, the method comprising exposing at least a portion of an electronically functional, unactivated integrated circuit-type battery to radiation to convert transmutable material in the unactivated battery to a radioisotope thereby producing an active cell and thus the integrated circuit-type active radioisotope battery.