Patents by Inventor Jae-Whui Kim

Jae-Whui Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Regulated cascode circuit, an amplifier including the same, and method of regulating a cascode circuit
    Patent number: 7446607
    Abstract: A regulated cascode circuit includes a first PMOS FET and a second PMOS FET connected in series between a first terminal that receives a first supply voltage and an output terminal, a first NMOS FET and a second NMOS FET connected in series between the output terminal and a second terminal that receives a second supply voltage, and a regulation circuit. The regulation circuit outputs a first control signal for stabilizing a voltage at a drain of the first PMOS FET to a gate of the second PMOS FET based on a voltage of the drain of the first PMOS FET and outputs a second control signal for stabilizing a voltage change in a source of the first NMOS FET to a gate of the first NMOS FET based on a voltage of the source of the first NMOS FET.
    Type: Grant
    Filed: May 3, 2007
    Date of Patent: November 4, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Mu-Kyeng Jung, Jae-Whui Kim, Bai-Sun Kong
  • Regulated cascode circuit, an amplifier including the same, and method of regulating a cascode circuit
    Publication number: 20080007338
    Abstract: A regulated cascode circuit includes a first PMOS FET and a second PMOS FET connected in series between a first terminal that receives a first supply voltage and an output terminal, a first NMOS FET and a second NMOS FET connected in series between the output terminal and a second terminal that receives a second supply voltage, and a regulation circuit. The regulation circuit outputs a first control signal for stabilizing a voltage at a drain of the first PMOS FET to a gate of the second PMOS FET based on a voltage of the drain of the first PMOS FET and outputs a second control signal for stabilizing a voltage change in a source of the first NMOS FET to a gate of the first NMOS FET based on a voltage of the source of the first NMOS FET.
    Type: Application
    Filed: May 3, 2007
    Publication date: January 10, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Mu-Kyeng Jung, Jae-Whui Kim, Bai-Sun Kong