Abstract: A cathode for a lithium secondary battery includes a cathode current collector, and a cathode active material layer formed on the cathode current collector. The cathode active material layer includes a cathode active material and a conductive material ID/IG is in a range from 0.5 to 1.25 in a Raman spectrum of the cathode active material layer. The cathode active material includes lithium metal oxide particles containing nickel and manganese and having a content of cobalt of less than 2 mol % among all elements except for lithium and oxygen.

Abstract: Disclosed are a refrigerator and a method for displaying a user interface on the refrigerator, a user terminal, and a method for performing a function in the user terminal. The refrigerator according to the present disclosure may include: a storage chamber storing food therein; a temperature detection unit configured to detect the internal temperature of the storage chamber; a cooling unit configured to supply cold air to the storage chamber; a camera configured to photograph food in the storage chamber; a communication unit configured to communicate with a user terminal; a display; at least one processor electrically connected to the temperature detection unit, the camera, the cooling unit, and the communication unit; and a memory electrically connected to the at least one processor.

Abstract: The present invention provides a pharmaceutical composition for treating multiple sclerosis based on AMPK inhibitory function and zinc homeostasis controlling function that effectively treats multiple sclerosis due to its excellent neuroprotective effect without side effects.

Abstract: A gripper may be provided that includes a motor, a jaw guide, a wedge head, a jaw, and a finger. The jaw guide is disposed on the motor and has a guide hole and a plurality of guide grooves. The wedge head is disposed in the guide hole and is able to perform up and down reciprocating movement by the motor. The jaw is disposed in the plurality of guide grooves respectively and is connected to the wedge head. When the wedge head moves in an up and down direction, the jaw is able to perform a reciprocating movement in a direction perpendicular to the up and down direction. The finger is disposed on the jaw. When the jaw moves in the direction perpendicular to the up and down direction, the finger moves together with the jaw, so that the movement of an object is limited.

Abstract: A gripper may be provided that includes a motor, a jaw guide, a wedge head, a jaw, and a finger. The jaw guide is disposed on the motor and has a guide hole and a plurality of guide grooves. The wedge head is disposed in the guide hole and is able to perform up and down reciprocating movement by the motor. The jaw is disposed in the plurality of guide grooves respectively and is connected to the wedge head. When the wedge head moves in an up and down direction, the jaw is able to perform a reciprocating movement in a direction perpendicular to the up and down direction. The finger is disposed on the jaw. When the jaw moves in the direction perpendicular to the up and down direction, the finger moves together with the jaw, so that the movement of an object is limited.

Abstract: A method for treating stroke in a subject includes administering to the subject a composition that includes a compound having a structure represented by Formula 1 as an active ingredient. The composition may treat a stroke by inhibiting 5? adenosine monophosphate-activated protein kinase (AMPK) activity of zinc neurotoxicity which is a main cause of strokes. The stroke may include hemorrhagic stroke, ischemic stroke or metal toxicity stroke.

Abstract: The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing transmission efficient of a charge generated through a photodiode to a floating diffusion area. The separation type unit pixel may include a first wafer on which a photodiode and a transmission transistor are formed and a second wafer on which a reset transistor and a source follower transistor are formed. In particular, the photodiode has a positive region to which an N_ground voltage is applied, the N_ground voltage having a lower voltage level than a ground voltage used in the second wafer.

Abstract: The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing transmission efficient of a charge generated through a photodiode to a floating diffusion area. The separation type unit pixel may include a first wafer on which a photodiode and a transmission transistor are formed and a second wafer on which a reset transistor and a source follower transistor are formed. In particular, the photodiode has a positive region to which an N_ground voltage is applied, the N_ground voltage having a lower voltage level than a ground voltage used in the second wafer.

Abstract: A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

Abstract: A programmable analog-to-digital converter (ADC) for use in a CMOS imaging system, the CMOS imaging system having an array of pixels, and the ADC configured to provide a enhanced conversion resolution for pixels providing a low analog voltage level and a relatively coarser conversion resolution for pixels providing a relatively higher analog voltage level.

Abstract: A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

Abstract: A programmable analog-to-digital converter (ADC) for use in a CMOS imaging system, the CMOS imaging system having an array of pixels, and the ADC configured to provide a enhanced conversion resolution for pixels providing a low analog voltage level and a relatively coarser conversion resolution for pixels providing a relatively higher analog voltage level.

Abstract: A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

Abstract: The present invention relates to an image sensor; and, more particularly, to a CMOS image sensor employing photodiodes which linearly increase the ability of keeping up photogenerated charges. In accordance with the present invention, a unit pixel of a CMOS image sensor comprises: a photodiode including: a) an N-type semiconductor region and a P-type semiconductor region for a PN junction to which a reverse bias is applied; and b) a highly doped region formed on one of the N-type semiconductor region and the P-type semiconductor region for collecting carriers of electron-hole pairs generated in a depletion region of the PN junction so that a voltage drop of the reverse bias is linear; and an image data processing unit for producing an image data in response to the carriers transferred from the highly doped region.