Abstract: The disclosure relates to an ultrathin micro-spectrometer and a method of manufacturing the same, and more particularly, relates to an ultrathin micro-spectrometer including: a lens portion including: a convex lens; and a back-reflection grating layer which is formed on a rear surface of the convex lens and on the same surface of which a reflective diffraction grating and a first planar reflector are arranged; a substrate layer which is disposed to be spaced apart from the lens portion and on which a light incidence microslit is formed; a second planar reflector which is formed on the substrate layer; and a complementary metal-oxide-semiconductor (CMOS) sensor on which light reflected by the lens portion is focused, and a method of manufacturing the same.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A protective film is provided. The protective film includes a release film, a base film which is disposed on the release film and comprises a protective part and a first pull tab part protruding from a first side surface of the protective part, and a first dummy film which is disposed on the release film, does not overlap the base film in a plan view, and comprises a part partially surrounding the first pull tab part, where edges of the base film and edges of the first dummy film are disposed inside edges of the release film in the plan view.

Abstract: The present disclosure relates to an electronic device, and more specifically, to an electronic device including a printed circuit board including a heat-generating element arranged on one surface thereof, and a heat transfer coin provided such that one surface of the heat transfer coin comes into contact with a portion of the other surface of the printed circuit board, opposite to the heat-generating element, so as to dissipate heat generated from the heat-generating element. Accordingly, the present disclosure provides an advantage of improving heat dissipation performance without increasing the thickness of the printed circuit board.

Abstract: A recombinant vector according to an embodiment is for genome editing without inserting a replicon into the plant genome in a T0 generation plant. The recombinant vector includes a geminivirus-based replicon between the sequence of LB (left border) and sequence of RB (right border) of Ti plasmid. A method of genome editing without inserting a replicon into the plant genome in a T0 generation plant according to an embodiment includes transforming a plant cell by inserting a foreign gene to the aforementioned recombinant vector.

Abstract: Disclosed is a cushion tip-up type seat for a vehicle. The cushion tip-up type seat for a vehicle is configured to perform a tip-up function of a cushion part, and to move a seat leftward and rightward to adjust an interval between left and right seats, whereby left and right spacing between occupants seated in the seats is sufficiently secured and the convenience of the occupants is improved.

Abstract: A semiconductor package including a die paddle, a first lead spaced apart from the die paddle and on one side of the die paddle, a second lead spaced apart from the die paddle and on another side of the die paddle, a spacer on the die paddle, a semiconductor die on the spacer, a first wire configured to connect an upper surface of the semiconductor die to the first lead, and a mold film configured to cover the die paddle, the first lead, the second lead, the spacer, the semiconductor die, and the first wire, wherein a first width of the spacer is greater than a second width of the die paddle so that the spacer overlaps the first lead may be provided.

Abstract: The present invention relates to a signal shielding apparatus and an antenna apparatus including same, and in particular, comprises a shield cover which is stacked and disposed on a printed board assembly (hereinafter, abbreviated to “PBA”), in which a plurality of signal-related components are mounted on one side thereof to prevent leakage of a signal from the plurality of signal-related components, wherein a grooved shield cover seating groove is formed in one surface of the PBA, and an insertion end insertably seated in the shield cover seating groove is integrally formed in the other surface from among one surface and the other surface of the shield cover, the other surface facing the one surface of the PBA, thereby providing advantages in that an increase in the manufacturing cost may be prevented, EMI shielding may be facilitated, and heat dissipation performance may be significantly improved.

Abstract: A display device having a touch sensor can include a display panel including a plurality of touch electrodes, and a readout integrated circuit (IC). Also, the readout IC is configured to apply a touch driving signal to the plurality of touch electrodes and amplify charges from the plurality touch electrodes according to an amplifier reset signal to generate an amplifier output voltage, and differentially adjust a toggle timing of the amplifier reset signal based on positions of the plurality of touch electrodes to control a level of the amplifier output voltage.

Abstract: The present invention relates to a multi-component host material and an organic electroluminescent device comprising the same. By comprising a specific combination of the multi-component host compounds, the organic electroluminescent device according to the present invention can provide high luminous efficiency and excellent lifespan characteristics.

Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.

Abstract: A method of manufacturing a semiconductor device includes: forming a trench in an insulating interlayer by etching the insulating interlayer; forming a conductive layer on bottom, side, and upper surfaces of the insulating interlayer where the trench is formed, using a first deposition process, the conductive layer on the bottom surface of the trench being thicker than the conductive layer on the side surface of the trench; forming a sacrificial layer in the trench covering the conductive layer formed on the bottom surface of the trench using a second deposition process different from the first deposition process; selectively removing the conductive layer formed on the upper surface of the insulating interlayer and formed on the side surface of the trench left exposed through the sacrificial layer; and selectively removing the sacrificial layer, to form a conductive line using the conductive layer remaining on the bottom surface of the trench.

Abstract: A data receiving device may include a dummy stage block. The dummy stage block may include m dummy stages, wherein m is a natural number greater than or equal to two. Each of the m dummy stages may be configured to remove inter-symbol interference (ISI) from a dummy input signal using dummy coefficient information to generate a dummy output signal free of the ISI. Each of the m dummy stages may be further configured to output the dummy output signal. A normal stage block may include n normal stages, wherein n is a natural number greater than or equal to two. Each of the n normal stages may be configured to remove ISI from an input signal using coefficient information to generate an output signal free of the ISI and may be further configured to output the output signal.

Abstract: A preparation process of 5-ethylidene-2-norbornene, including: introducing dicyclopentadiene into a dicyclopentadiene decomposition reactor to thermally decompose the dicyclopentadiene; introducing a product of the above step into a cyclopentadiene purification tower; introducing 1,3-butadiene, a solvent, and cyclopentadiene separated from the top of the cyclopentadiene purification tower into a Diels-Alder reactor to react the same; introducing a product of the immediate above step into a 1,3-butadiene removal tower to recover 1,3-butadiene from the top; introducing a mixture at the bottom of the 1,3-butadiene removal tower into a desolvation tower, and recycling a solvent and unreacted raw materials recovered from the top of the desolvation tower to the dicyclopentadiene decomposition reactor; introducing a mixture at the bottom of the desolvation tower into a 5-vinyl-2-norbornene separation tower to separate 5-vinyl-2-norbornene; and introducing the 5-vinyl-2-norbornene into an isomerization reactor to rea

Abstract: An apparatus and a method for editing 3D SLAM data according to an exemplary embodiment of the present disclosure directly edits a key frame or an edge of simultaneous localization and mapping (SLAM) data by the user's manipulation, optimizes a pose graph of the 3D SLAM data based on the key frame and the edge edited by the user's manipulation, and generates a 2D grid map corresponding to the 3D SLAM data based on the updated 3D SLAM data to improve the convenience of the user for editing the 3D SLAM data.

Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: Disclosed are semiconductor packages and/or methods of fabricating the same. The semiconductor package comprises a package substrate, a first semiconductor chip mounted on the package substrate, a second semiconductor chip mounted on a top surface of the first semiconductor chip, and a first under-fill layer that fills a space between the package substrate and the first semiconductor chip. The package substrate includes a cavity in the package substrate, and a first vent hole that extends from a top surface of the package substrate and is in fluid communication with the cavity. The first under-fill layer extends along the first vent hole to fill the cavity.

Abstract: Disclosed herein are a neural network model deployment method and apparatus for providing a deep learning service. The neural network model deployment method may include providing a specification wizard to a user, searching for and training a neural network based on a user requirement specification that is input through the specification wizard, generating a neural network template code based on the user requirement specification and the trained neural network, converting the trained neural network into a deployment neural network that is usable in a target device based on the user requirement specification, and deploying the deployment neural network to the target device.

Abstract: An apparatus for non-invasively measuring bio-information is provided. The apparatus for estimating bio-information may include a pulse wave sensor configured to measure a pulse wave signal from an object; a sensor position sensor configured to obtain sensor position information of the pulse wave sensor with respect to the object, based on the object being in contact with the pulse wave sensor; and a processor configured to estimate the bio-information based on blood vessel position information of the object, the sensor position information, and the pulse wave signal.

Abstract: A light emitting display device includes a display panel including a first pixel group including a plurality of pixels in 2N rows. The light emitting display device further includes a second pixel group disposed subsequent to the first pixel group and including a plurality of pixels in 2N rows. The light emitting display device further includes an emission signal unit including a first emission stage for applying the same first emission signal to the first pixel group and a second emission stage for applying the same second emission signal to the second pixel group. In a first frame, a falling time of the first emission signal and a rising time of the second emission signal are different from each other.