Abstract: Embodiments provide a light emitting device comprising a support member, a light emitting structure disposed on the support member, the light emitting structure comprising a first semiconductor layer comprises a first and second regions, a second semiconductor layer disposed on the second region, and an active layer between the first and second semiconductor layers, a first electrode disposed on the first semiconductor layer and a second electrode disposed on the second semiconductor layer, wherein the support member includes metal ions to convert light of a first wavelength emitted from the active layer into light of a second wavelength different from the first wavelength.