Abstract: A sensing block includes a block body having a plurality of slots through which electrode leads of battery cells pass, a plurality of sensing terminals installed between the plurality of slots on a front surface of the block body, a circuit board installed on the front surface of the block body, and a connector installed on the circuit board.

Abstract: A battery cell cartridge in which a battery cell is accommodated, includes first, second, third and fourth frames formed in a quadrangular shape, wherein the first frame and the second frame extend along a horizontal direction and are spaced from each other at a predetermined interval therebetween, the first frame is positioned on an upper side and the second frame is positioned on a lower side, the third frame and the fourth frame extend along a vertical direction and are spaced from each other at a predetermined interval therebetween, and the third frame is positioned on a first side and the third frame is positioned on a second side opposite to the second frame.

Abstract: An embodiment vehicle door opening/closing system includes an inner panel defining a door open portion of a vehicle, the inner panel including an installation groove having a protruding or recessed shape, a driving device disposed in the installation groove of the inner panel, and a link mechanism installed on a chassis through a rotating shaft, a first end of the link mechanism being connected to the driving device such that power is transferred thereto, and a second end of the link mechanism being connected to a door such that, during driving of the driving device, the link mechanism rotates with reference to the rotating shaft to open/close the door.

Abstract: An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (120); a second conductive type AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive type AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive type AlxGa1-xN layer (0<x??0.25) (115c) and disposed on the active layer (117); and a first conductive type AlGaN-based semiconductor layer (114) disposed on the current spreading layer (115). A composition x of Al in the first conductive type AlxGa1-xN layer (0<x??0.25) (115c) may be reduced in a direction of the active layer (117) from the first conductive type first AlGaN-based semiconductor layer (114).

Abstract: An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (120); a second conductive type AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive type AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive type AlxGa1-xN layer (0<x??0.25) (115c) and disposed on the active layer (117); and a first conductive type AlGaN-based semiconductor layer (114) disposed on the current spreading layer (115). A composition x of Al in the first conductive type AlxGa1-xN layer (0<x??0.25) (115c) may be reduced in a direction of the active layer (117) from the first conductive type first AlGaN-based semiconductor layer (114).

Abstract: One embodiment relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductive layer; a gallium nitride based superlattice layer on the active layer; and a second conductive semiconductor layer on the gallium nitride based superlattice layer. The gallium nitride based superlattice layer can comprise: a first gallium nitride based superlattice layer on the active layer; and a second gallium nitride based superlattice layer on the first gallium nitride based superlattice layer.

Abstract: One embodiment relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductive layer; a gallium nitride based superlattice layer on the active layer; and a second conductive semiconductor layer on the gallium nitride based superlattice layer. The gallium nitride based superlattice layer can comprise: a first gallium nitride based superlattice layer on the active layer; and a second gallium nitride based superlattice layer on the first gallium nitride based superlattice layer.

Abstract: A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conducti

Abstract: A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conducti

Abstract: A device and method for transmitting data can conveniently perform data transmission between two portable terminals. The device preferably includes a first portable terminal transmitting data on which a drag operation has occurred to a second portable terminal when the second portable terminal is coupled to the first portable terminal using a time and a moving speed of the drag operation when the drag operation occurs from the first terminal to the second portable terminal. The second portable terminal receives the data from the first portable terminal using the time and the moving speed of the drag operation when the drag operation occurs from the first portable terminal to the second portable terminal coupled to the first portable terminal through near field communication.

Abstract: A detergent case which includes a liquid detergent accommodation space, a siphon pipe protruded upwardly from a bottom surface of the liquid detergent accommodation space, and a siphon cap surrounding the siphon pipe. The detergent case also includes a remaining water discharge hole formed on a bottom surface of the liquid detergent accommodation space, and an opening and closing unit to open and close the remaining water discharge hole due to buoyancy of a liquid accommodated within the liquid detergent accommodation space.

Abstract: A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.

Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Abstract: A detergent case includes a remaining water discharge hole formed on a bottom surface of a liquid detergent accommodation space, and an opening and closing unit to open and close the remaining water discharge hole due to buoyancy of a liquid accommodated within the liquid detergent accommodation space.

Abstract: A device and method for transmitting data can conveniently perform data transmission between two portable terminals. The device preferably includes a first portable terminal transmitting data on which a drag operation has occurred to a second portable terminal when the second portable terminal is coupled to the first portable terminal using a time and a moving speed of the drag operation when the drag operation occurs from the first terminal to the second portable terminal. The second portable terminal receives the data from the first portable terminal using the time and the moving speed of the drag operation when the drag operation occurs from the first portable terminal to the second portable terminal coupled to the first portable terminal through near field communication.

Abstract: There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.