Abstract: Provided is a method of using a plasma etching apparatus in semiconductor manufacturing, the method including using a plasma etching apparatus in semiconductor manufacturing, the plasma etching apparatus comprising a component including a composite sintered body therein, wherein the composite sintered body comprises 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO), and wherein the component has plasma resistance. In addition, provided is a method of reducing etching by plasma in a plasma etching apparatus during semiconductor manufacturing, the method including providing a plasma etching apparatus for manufacturing a semiconductor including a component including a composite sintered body, wherein the composite sintered body comprises 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO), and wherein the component has plasma resistance.

Abstract: Provided is a plasma etching apparatus component for manufacturing a semiconductor characterized by including a composite sintered body which contains 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO) and having plasma resistance. The plasma etching apparatus component for manufacturing a semiconductor provided in one aspect of the present invention has excellent corrosion resistance to plasma, and may have good corrosion resistance to plasma even when the composite sintered body is sintered at a relatively low relative density. In addition, the composite sintered body has a small crystal grain size and a small increase in surface roughness after etching, so that there is an effect that contaminant particles may be reduced. Furthermore, the plasma etching apparatus component for manufacturing a semiconductor has excellent strength compared to a typical plasma-resistant material, is inexpensive, and is excellent in terms of economic feasibility and utilization.

Abstract: An operation method of a switch apparatus in an Ethernet-based vehicle network, includes: receiving a first frame including original data from an end node; generating a second frame including the original data; duplicating the original data to generate duplicated data; and generating a third frame including the duplicated data and an indicator indicating that the third frame includes the duplicated data.

Abstract: The present invention relates to a method of manufacturing a light transmitting yttria member by using hot-press sintering. The present invention provides a method of manufacturing light transmitting yttria by performing hot-press sintering on a molded body made of raw material powder including yttria by using a hot-press sintering apparatus, in which the hot-press sintering is performed in a state in which a spacer is interposed between the molded body and a pressing surface of the molded body, and the spacer is made of heat-resistant metal which is substantially unreactive to the molded body at a sintering temperature. According to the present invention, it is possible to manufacture highly compacted light transmitting yttria having light transmittance of 80% by using a single hot-press sintering process.

Abstract: The present invention discloses a conductive plasma-resistant member including an yttrium oxide. The plasma-resistant member of the present invention includes an yttrium compound which includes a matrix phase consisting of yttrium oxides, and a conductive dispersed phase. According to the present invention, the present invention provides a semiconductor-grade yttria composite which may be used as a plasma-resistant member requiring conductivity like a focus ring.

Abstract: This invention relates to a mold for synthesizing powder, and particularly to a mold for synthesizing ceramic powder suitable for use as a mold system which is subjected to spark plasma sintering, which includes a cylindrical mold body into which a powder material used to synthesize ceramic powder is charged, and a pair of mold covers respectively disposed in contact with the top and the bottom of the mold body, thus basically suppressing the production of aggregates in synthesized powder due to pressing and also enabling the mold system to operate even when using a small amount of power, so that the system is prevented from malfunctioning and the power consumption thereof is reduced upon operating.

Abstract: This invention relates to a mold for synthesizing powder, and particularly to a mold for synthesizing ceramic powder suitable for use as a mold system which is subjected to spark plasma sintering, which includes a cylindrical mold body into which a powder material used to synthesize ceramic powder is charged, and a pair of mold covers respectively disposed in contact with the top and the bottom of the mold body, thus basically suppressing the production of aggregates in synthesized powder due to pressing and also enabling the mold system to operate even when using a small amount of power, so that the system is prevented from malfunctioning and the power consumption thereof is reduced upon operating.

Abstract: Disclosed herein is a precursor solution for forming a biaxially oriented buffer layer through low-temperature heat treatment, by which a highly oriented buffer layer can be formed even when the precursor solution is heat-treated at a low temperature of 1000° C. or lower at the time of forming a buffer layer through a wet chemical method. The precursor solution is prepared by adding a carboxylate or an alkoxide of bismuth, boron, lead, gallium, or the like, which is a metal salt for forming an oxide having a low melting point of 1200° C. or lower after pyrolysis in an oxygen atmosphere, to a precursor solution for forming a buffer layer through a wet chemical method.

Abstract: Disclosed herein is a precursor solution for forming a biaxially oriented buffer layer through low-temperature heat treatment, by which a highly oriented buffer layer can be formed even when the precursor solution is heat-treated at a low temperature of 1000° C. or lower at the time of forming a buffer layer through a wet chemical method. The precursor solution is prepared by adding a carboxylate or an alkoxide of bismuth, boron, lead, gallium, or the like, which is a metal salt for forming an oxide having a low melting point of 1200° C. or lower after pyrolysis in an oxygen atmosphere, to a precursor solution for forming a buffer layer through a wet chemical method.

Abstract: The present invention is provided to manufacture a low magnetic loss metal tape with biaxial texture and a manufacturing method thereof. The low magnetic loss metal tape has a non-magnetic metal layer deposited on a nickel layer in the form of stack. The low magnetic loss metal tape with biaxial texture is manufactured by the following steps. A biaxially textured nickel layer is formed on a surface of cathode rotating in an electroplating bath including a cathode with single crystalline structure or similarly high orientation, and an anode made of high purity nickel. The nickel layer formed on the cathode is then washed in a water bath. Subsequently, a non-magnetic metal layer is formed on the washed nickel layer rotating in a plating bath with a non-magnetic metal solution. The metal tape is finally manufactured by delaminating and winding the nickel/non-magnetic metal layers.

Abstract: Disclosed herein are a biaxially textured pure metal or alloy layer deposited by electroplating process on the surface of a single-crystalline or quasi-single-crystalline metal substrate, and a method for manufacturing the biaxially textured pure metal or alloy layer.

Abstract: The present invention is provided to manufacture a low magnetic loss metal tape with biaxial texture and a manufacturing method thereof. The low magnetic loss metal tape has a non-magnetic metal layer deposited on a nickel layer in the form of stack. The low magnetic loss metal tape with biaxial texture is manufactured by the following steps. A biaxially textured nickel layer is formed on a surface of cathode rotating in an electroplating bath including a cathode with single crystalline structure or similary high orientation, and an anode made of high purity nickel. The nickel layer formed on the cathode is then washed in a water bath. Subsequently, a non-magnetic metal layer is formed on the washed nickel layer rotating in a plating bath with a non-magnetic metal solution. The metal tape is finally manufactured by delaminating and winding the nickel/non-magnetic metal layers.

Abstract: Disclosed herein are a biaxially textured pure metal or alloy layer deposited by electroplating process on the surface of a single-crystalline or quasi-single-crystalline metal substrate, and a method for manufacturing the biaxially textured pure metal or alloy layer. Specifically, the biaxially textured pure metal or alloy layer is deposited by electroplating process on the surface of a pure metal or alloy substrate having single-crystalline or quasi-single-crystalline orientation. The biaxially textured pure metal or alloy layer has a misorientation on the c-axis of 4° or less and a misorientation on the plane formed by the a-axis and b-axis of 5.2° or less in which the misorientation on the c-axis is determined by a Full Width at Half Maximum of peaks on the &thgr;-rocking curve and the misorientation on the plane formed by the a-axis and b-axis is determined by a Full Width at Half Maximum of peaks on the &PHgr;-scan.

Abstract: Disclosed is an Ni-plated layer of biaxial texture, which is formed by electroplating. In the Ni-plated layer,peaks measured on a &thgr;-rocking curve have a FWHM of 7° or less in terms of the misorientation on the c-axis; and peaks measured on &phgr;-scan have a FWHM of 21° or less in terms of the misorientation on the plane formed by the a-axis and the b-axis. Also, a process of electroplating a Ni layer are disclosed. The process comprises forming a Ni-plated layer of biaxial texture under a magnetic field by electroplating and subjecting the Ni-plated layer to thermal treatment to develop the biaxial texture. This electroplating process is expected to give a significant contribution to the development of the electroplating technology and to replace the vacuum deposition used for the preparation of thin film magnetic materials or thin film piezoelectric materials.

Abstract: A process for producing Bi-2223 high Tc superconductor in which fine MgO particles (<0.1 &mgr;m) are homogeneously distributed to provide flux pinning centers in Bi-2223 high Tc superconductor in order to give enhanced critical current density under magnetic field, as compared to the Bi-2223 high Tc superconductor without MgO dispersion, when processed under similar conditions. The process comprises mixing partially converted Bi-2223 powder and MgO fine particles, drying to give mixed powder, filling in silver tube, drawing, rolling and heat-treating at a temperature and for a time sufficient to form Bi-2223 high Tc superconductor in which fine MgO particles are homogeneously distributed.