Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.

Abstract: A communications system may include a transmitter, a receiver, and a link analyzer. The transmitter may be configured to encode a message with an error correction code, and also modulate and transmit the encoded message via a communications link. The receiver may be configured to receive the message via the communications link, demodulate the transmission to generate demodulated coded information, and decode the demodulated coded information using the error correction code to generate a decoded message. The link analyzer may be configured to re-encode the decoded message to generate re-encoded information, compare the re-encoded information to the demodulated coded information, and generate a link quality metric value based on the comparison of the re-encoded information with the demodulated coded information. The link quality metric value may be indicative of a link quality of the communications link.

Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

Abstract: An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.

Abstract: An optoelectronic device includes: (i) a semiconductor substrate doped with a first level of n-type dopants, (ii) a contact semiconductor layer disposed over the semiconductor substrate and doped with a second level of n-type dopants, larger than the first level, (iii) an upper distributed Bragg-reflector (DBR) stack disposed over the contact semiconductor layer and including alternating first and second epitaxial semiconductor layers having respective first and second indexes of refraction that differ from one another in a predefined wavelength band, (iv) a set of epitaxial layers disposed over the upper DBR, the set of epitaxial layers includes one or more III-V semiconductor materials and defines: (a) a quantum well structure, and (b) a confinement layer, and (v) a lower DBR stack disposed over the set of epitaxial layers, opposite the upper DBR, and including alternating dielectric and semiconductor layers.

Abstract: An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.

Abstract: An electromagnetic system for a variety of applications can be formed through microfabrication techniques. Each segment of a conductive coil associated with an electromagnet is planar making it easy to fabricate the coil through microfabrication techniques. Furthermore, a plurality of magnetic fluxes generated by the electromagnet are dispersed across multiple points in order to reduce problems associated with flux density saturation, and the coil is positioned close to the magnetic core of the electromagnet in order to reduce problems associated with leakage. Accordingly, a low-cost, more efficient electromagnetic system can be batch fabricated through microfabrications techniques.

Abstract: An electromagnetic system for a variety of applications can be formed through microfabrication techniques. Each segment of a conductive coil associated with an electromagnet is planar making it easy to fabricate the coil through microfabrication techniques. Furthermore, a plurality of magnetic fluxes generated by the electromagnet are dispersed across multiple points in order to reduce problems associated with flux density saturation, and the coil is positioned close to the magnetic core of the electromagnet in order to reduce problems associated with leakage. Accordingly, a low-cost, more efficient electromagnetic system can be batch fabricated through microfabrications techniques.