Abstract: A slim double-skin structure according to one aspect of the present invention may comprise: a window frame, an outer window sash frame provided on an outdoor side and coupled to the window frame, an outer glass provided on the outer window sash frame, an inner window sash frame provided on an indoor side and coupled to the window frame, an inner glass provided on the inner window sash frame, an awning film provided in a hollow layer formed between the outer glass and the inner glass to serve as a shading, and a case-type glass fixing frame which is provided in the outer window sash frame so as to be located in the hollow layer and fixes the outer glass to the outer window sash frame concurrently with building-in and guiding the awning film.

Abstract: A plastic ball grid array package having a reinforcement resin that may address the problem of delamination and cracks in a boundary region between a sealing resin and a substrate. The reinforcement resin is formed at an outer region of a sealing resin and has a height that is lower than that of the sealing resin. The reinforcement resin may be formed of the same material used to form the sealing resin and has a structure completely covering a first surface of the substrate. Accordingly, cracks and delamination defects of the semiconductor package may be reduced by absorbing stress that occurs by physical impact in a boundary region between the substrate and the sealing resin.

Abstract: A lead frame for making a semiconductor package is disclosed. The leadframe's leads include a lead lock provided at a free end of each inner lead that is adapted to increase a bonding force of the inner lead to a resin encapsulate, thereby effectively preventing a separation of the inner lead from occurring in a singulation process involved in the fabrication of the semiconductor package. A semiconductor package fabricated using the lead frame and a fabrication method for the semiconductor package are also disclosed.

Abstract: A semiconductor package is disclosed that bonds a semiconductor chip to a leadframe using a flip chip technology. An exemplary semiconductor package includes a semiconductor chip having a plurality of input-output pads at an active surface thereof. A plurality of leads are superimposed by the bond pads and active surface of the semiconductor chip. The leads have at least one exposed surface at a bottom surface of the package body. A plurality of conductive connecting means electrically connect the input-output pads of the chip to the leads. A package body is formed over the semiconductor chip and the conductive connecting means. The bottom surface portions of the leads are exposed to the outside.

Abstract: An electrostatic-discharge (ESD) protecting circuit of a semiconductor device prevents damage from an ESD applied to an internal circuit through an input or output pad. The thickness of respective gate insulating layers of respective active devices of the electrostatic-discharge protecting circuit and internal circuit, which are formed within a given radius in the range of about 350 .mu.m to about 1000 .mu.m from the electrostatic-discharge protecting circuit, is thicker than the thickness of gate insulating layers of active devices formed outside the radius.

Abstract: An electrostatic-discharge (ESD) protecting circuit of a semiconductor device prevents damage from an ESD applied to an internal circuit through an input or output pad. The thickness of respective gate insulating layers of respective active devices of the electrostatic-discharge protecting circuit and internal circuit, which are formed within a given radius in the range of about 350.mu.m to about 1000.mu.m from the electrostatic-discharge protecting circuit, is thicker than the thickness of gate insulating layers of active devices formed outside the radius.