Abstract: A battery cell measurement module includes a lower housing having a connection part and a fixing part connected to the lower housing. An upper portion of the fixing part has a battery cell accommodation space accommodating a battery cell. The fixing part includes a connection hole that is in communication with the battery cell accommodation space and has the connection part arranged therein. Module includes a height control part that extends from the battery cell accommodation space to the connection part via the connection hole. Module includes an upper housing detachably attached to the lower housing, arranged to surround the fixing part and the height control part, and provided with a transparent window. The battery cell has an opening in an upper surface of the battery cell and is accommodated in the battery cell accommodation space such that the opening is located at a position vertically overlapping the transparent window.

Abstract: According to one aspect of the present invention, a nanocomposite cathode electrode is manufactured by mixing a cathode active material, a conductive material, and a binder and curing a resultant mixture, wherein the cathode active material may include a first mixture of a p-type organic compound and an n-type organic compound, or a second mixture of the p-type organic compound and metal powder.

Abstract: Provided is a method of forming black phosphorus (BP) with a high purity and a high electrical conductivity. The method includes the steps of performing a milling process and a sintering process on red phosphorus (RP) and adding tin (Sn) while performing a milling process and a sintering process on red phosphorus (RP).

Abstract: A battery cell measurement module for in-situ optical and electrochemical analysis includes a lower housing including a battery cell accommodation space therein, an upper cover that is detachably attached to the lower housing and provided with a transparent window, and a battery cell block that is arranged in the battery cell accommodation space. The battery cell block includes a first electrode base portion, a second electrode base portion, and a battery stack arranged between the first electrode base portion and the second electrode base portion. The first electrode base portion, the battery stack, and the second electrode base portion are sequentially arranged in a first direction parallel to an upper surface of the transparent window such that a thickness direction of the battery stack is arranged parallel to the upper surface of the transparent window.

Abstract: A battery cell measurement module includes a lower housing having a connection part and a fixing part connected to the lower housing. An upper portion of the fixing part has a battery cell accommodation space accommodating a battery cell. The fixing part includes a connection hole that is in communication with the battery cell accommodation space and has the connection part arranged therein. Module includes a height control part that extends from the battery cell accommodation space to the connection part via the connection hole. Module includes an upper housing detachably attached to the lower housing, arranged to surround the fixing part and the height control part, and provided with a transparent window. The battery cell has an opening in an upper surface of the battery cell and is accommodated in the battery cell accommodation space such that the opening is located at a position vertically overlapping the transparent window.

Abstract: Provided is a method of preparing a thin film structure having anisotropic, transparent, electroconductive, flexible properties. The method of preparing a thin film structure includes providing a growth substrate; growing silver nanolines on the growth substrate by using a lightning-rod effect; molding the silver nanolines by using a polymer; and separating the silver nanolines molded by the polymer from the growth substrate to form a freestanding anisotropic, transparent, electroconductive, and flexible thin film.

Abstract: Provided is a method of preparing a thin film structure having anisotropic, transparent, electroconductive, flexible properties. The method of preparing a thin film structure includes providing a growth substrate; growing silver nanolines on the growth substrate by using a lightning-rod effect; molding the silver nanolines by using a polymer; and separating the silver nanolines molded by the polymer from the growth substrate to form a freestanding anisotropic, transparent, electroconductive, and flexible thin film.

Abstract: Provided is a method of preparing a thin film structure having anisotropic, transparent, electroconductive, flexible properties. The method of preparing a thin film structure includes providing a growth substrate; growing silver nanolines on the growth substrate by using a lightning-rod effect; molding the silver nanolines by using a polymer; and separating the silver nanolines molded by the polymer from the growth substrate to form a freestanding anisotropic, transparent, electroconductive, and flexible thin film.

Abstract: Provided is a method of preparing a thin film structure having anisotropic, transparent, electroconductive, flexible properties. The method of preparing a thin film structure includes providing a growth substrate; growing silver nanolines on the growth substrate by using a lightning-rod effect; molding the silver nanolines by using a polymer; and separating the silver nanolines molded by the polymer from the growth substrate to form a freestanding anisotropic, transparent, electroconductive, and flexible thin film.

Abstract: An integrated circuit package is provided with a substrate having first and second contact pads exposed through a passivation layer on the substrate. A first metallurgy layer is over the substrate. A second metallurgy layer is over the first metallurgy layer. A protective layer is over the first contact pad.

Abstract: An integrated circuit package is provided with a substrate having first and second contact pads exposed through a passivation layer on the substrate. A first metallurgy layer is over the substrate. A second metallurgy layer is over the first metallurgy layer. A protective layer is over the first contact pad.

Abstract: An integrated circuit package and method of manufacture is provided. A substrate having a number of contact pads exposed through a passivation layer thereon has a first under bump metallurgy layer over at least one of the contact pads. A top under bump metallurgy layer of copper having a thickness of less than about 800 angstroms is formed over the first under bump metallurgy layer.

Abstract: A method for manufacturing an integrated circuit package is provided with a substrate having first and second contact pads exposed through a passivation layer on the substrate. A first metallurgy layer is formed over the substrate. A second metallurgy layer is formed over the first metallurgy layer. The first metallurgy layer is removed while leaving a portion thereof over the second contact pad. The second metallurgy layer is removed while leaving a portion thereof over the second contact pad. A protective layer is formed over the first contact pad while removing the first metallurgy layer.

Abstract: A method for manufacturng an integrated circuit package is provided with a substrate having first and second contact pads exposed through a passivation layer on the substrate. A first metallurgy layer is formed over the substrate. A second metallurgy layer is formed over the first metallurgy layer. The first metallurgy layer is removed while leaving a portion thereof over the second contact pad. The second metallurgy layer is removed while leaving a portion thereof over the second contact pad. A protective layer is formed over the first contact pad while removing the first metallurgy layer.

Abstract: Improved Fe—Hf—C—N and Fe—Hf—N materials and preparation methods thereof are disclosed. Such materials possess a high saturation magnetic flux density and an excellent soft magnetic property at a high frequencies of more than tens of MHz, without requiring an additional heat treatment, while avoiding an amorphous phenomenon therein and increasing grain energy. An iron-based soft magnetic thin film alloy has an empirical formula of FexHfyCzNv (where, x, y, z, and v respectively denote atomic %, 68≦x≦85, 4≦y≦10, 0≦z≦12, 3≦v≦20, 15≦y+z+v≦32, and x+y+z+v=100), and its fine structure is formed of nano size crystalline grains including nitrides or carbides of &agr;-Fe and Hf.