Abstract: A wafer defect test apparatus in which a defect prediction performance is improved and a simulation time is shortened is provided.

Abstract: In one example, an electronic device comprises a first and second substrates comprising first and second dielectric structures and first and second conductive structures, a first electronic component over the first substrate, the second substrate being over the first substrate and the first electronic component, a first interconnect structure between the first substrate and the second substrate and coupled with the first conductive structure and the second conductive structure, a first encapsulant between the first substrate and the second substrate and covering a lateral side of the first interconnect structure and a lateral side of the first electronic component, a second interconnect structure over the second substrate and coupled with the second conductive structure, a second encapsulant over the second substrate and covering a lateral side of the second interconnect structure, and a photonic integrated circuit over the second encapsulant and coupled with the second interconnect structure.

Abstract: Disclosed is an electrolyte and a secondary battery containing the same. According to the present disclosure, charging efficiency and output may be improved due to low discharge resistance, and gas generation and thickness increase may be suppressed to provide a secondary battery with long-term lifespan and excellent high temperature capacity retention.

Abstract: Provided is pharmaceutical composition for preventing or treating degenerative brain disease, containing regulatory T cells as an active ingredient. The pharmaceutical composition inhibits M1 microglial activation or transformation into DAM, promotes M2 polarization, inhibits tau protein phosphorylation, and increases the expression of anti-inflammatory cytokines, thereby protecting nerve cells, and thus it may be useful for the prevention or treatment of degenerative brain diseases.

Abstract: Disclosed is an electrolyte and a secondary battery containing the same. According to the present disclosure, charging efficiency and output may be improved due to low discharge resistance, and gas generation and thickness increase may be suppressed to provide a secondary battery with long-term lifespan and excellent high temperature capacity retention.

Abstract: Disclosed is an electrolyte and a secondary battery containing the same. According to the present disclosure, charging efficiency and output may be improved due to low discharge resistance, and gas generation and thickness increase may be suppressed to provide a secondary battery with long-term lifespan and excellent high temperature capacity retention.

Abstract: Disclosed is an electrolyte and a secondary battery containing the same. According to the present disclosure, charging efficiency and output may be improved due to low discharge resistance, and gas generation and thickness increase may be suppressed to provide a secondary battery with long-term lifespan and excellent high temperature capacity retention.

Abstract: In one example, an electronic device includes a lower substrate comprising a lower substrate upper side and a lower substrate lower side, and an upper substrate comprising an upper substrate upper side and an upper substrate lower side. The electronic device also includes a first electronic component and a second electronic component coupled to the upper substrate upper side. A first device interconnect and a second device interconnect couple the lower substrate upper side to the upper substrate lower side. The electronic device also includes a connect die coupled to the lower substrate upper side that electrically couples the first electronic component to the second electronic component. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device can comprise a unit substrate comprising a unit conductive structure and a unit dielectric structure, and an electronic component coupled to the unit conductive structure. The unit substrate can comprise a portion of a singulated subpanel substrate of a panel substrate. Other examples and related methods are also disclosed herein.

Abstract: The present invention relates to a composition for preventing (alleviating) hair loss or promoting hair regrowth, comprising an ingredient for promoting hair regrowth or retarding hair loss. In this regard, in-vitro experiments were conducted in the present invention to verify the effects of promoting the wnt/beta-catenin signaling pathway activity, proliferating dermal papilla cells, and increasing an expression level of beta-catenin protein. Furthermore, the composition was found to have a high effect of preventing hair loss and/or promoting hair regrowth because a better result was obtained as assayed by researchers' evaluation through clinical photography and by phototrichogram after application thereof. In light of such comprehensive outcomes, the composition of the present invention has an excellent effect of preventing hair loss and/or promoting hair regrowth.

Abstract: A display device includes a display panel which includes a letterbox area and an image display area which displays an image and includes a boundary luminance variable area extending from the letterbox area; and a luminance control unit which controls a reduced luminance amount of the boundary luminance variable area based on the image.

Abstract: Semiconductor light emitting devices and packages are provided. The semiconductor light emitting device includes a substrate, a luminous structure, and first and second electrodes. The substrate has a first region and a second region that is spaced apart in a first direction from the first region. The luminous structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked on the substrate. The first electrode is on the second semiconductor layer. The second electrode is electrically coupled to the first semiconductor layer through plural first openings that penetrate the first electrode, the second semiconductor layer, and the active layer, where the first openings expose the first semiconductor layer. The first electrode is in contact with the second semiconductor layer in the first region and in the second region, and the first openings are in the first region.

Abstract: In one example, a semiconductor device can comprise a unit substrate comprising a unit conductive structure and a unit dielectric structure, and an electronic component coupled to the unit conductive structure. The unit substrate can comprise a portion of a singulated subpanel substrate of a panel substrate. Other examples and related methods are also disclosed herein.

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

Abstract: Provided is a composition for preventing hair loss and promoting hair growth, containing an ingredient for inducing anagen hair growth or hair growth promotion. The composition for preventing hair loss and promoting hair growth, of the presently claimed subject matter, shortens the period of telogen-to-anagen transition in the hair growth cycle, so as to promote hair growth and delay the transition to the catagen stage, thereby having the excellent effects of preventing hair loss and promoting hair growth.

Abstract: A wafer defect test apparatus in which a defect prediction performance is improved and a simulation time is shortened is provided.

Abstract: A selectively shielded and/or three-dimensional semiconductor device and a method of manufacturing thereof. For example and without limitation, various aspects of this disclosure provide a semiconductor device that comprises a composite plate for selective shielding and/or a three-dimensional embedded component configuration.

Abstract: Disclosed is an adaptive autonomous emergency braking (AEB) control method. An adaptive AEB control method includes identifying a front vehicle to be avoided on the basis of front-view information acquired through a front-view sensor, setting a steering avoidable area on the basis of speed information and lateral acceleration information of a host vehicle, adaptively determining an AEB activation time point on the basis of whether a vehicle is present in the set steering avoidable area, and controlling AEB activation on the basis of the adaptively determined AEB activation time point.

Abstract: The present invention provides a cargo falling prevention system for a vehicle and a control method, which can determine a defective loaded state of cargo at an early stage to prevent the cargo from falling off a vehicle so as to avoid a collateral accident. Further, the present invention provides a cargo falling prevention system for a vehicle and a control method, which can allow a driver to recognize falling of cargo and to take a quick action to cope with the falling of the cargo.

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.