Abstract: A display device that includes a light emitting element layer disposed on a substrate, the light emitting element layer including a plurality of light emitting elements; and an encapsulation layer comprising a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on the organic encapsulation layer, the second inorganic encapsulation layer including a first inorganic layer; a second inorganic layer; and a third inorganic layer disposed on the organic encapsulation layer, a thickness of the second inorganic layer is greater than a thickness of the third inorganic layer, the thickness of the third inorganic layer is greater than a thickness of the first inorganic layer, and a refractive index of the second inorganic layer is about 1.9 or more.

Abstract: Provided is a display device, including sub-pixels formed on a base layer, and including a color conversion layer in a first sub-pixel area and including a quantum-dot, a first scattering layer in a second sub-pixel area and including a first scatterer, and a second scattering layer in the third sub-pixel area and including a second scatterer, a first color filter in the first sub-pixel area, a second color filter in the second sub-pixel area, and a third color filter in the third sub-pixel area, wherein emitted light from a light emitting element includes light of the second color and light of the third color, and wherein colors of light passing through the first scattering layer and the second scattering layer are substantially unchanged by the first scattering layer and the second scattering layer.

Abstract: Provided is an apparatus for manufacturing a multi-pane glass unit. The apparatus includes: a first plate configured to hold a first glass pane; a second plate configured to hold a second glass pane such that the second glass pane faces the first glass pane; and a conveyer including a first portion configured to convey the first glass pane onto the first plate and a second portion configured to convey the second glass pane onto the second plate.

Abstract: Provided herein is a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a channel layer, and a source select line surrounding at least a part of the channel layer. A p-type impurity is locally doped in the part of the channel layer or a gate insulating layer includes a first member interposed between the channel layer and the source select line and aligned with a data storage layer.

Abstract: The present invention relates to a Schwann cell-specific promoter and use thereof. More particularly, the present invention relates to an artificially engineered minimal promoter that specifically operates in Schwann cells, wherein the artificially engineered minimal promoter is derived from an MPZ (Myelin Protein Zero or PO) promoter. In addition, the present invention relates to a vector using the Schwann cell-specific promoter and a method for treating Schwann cell-related diseases using same.

Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disp

Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.

Abstract: A rear seat apparatus for a vehicle includes a back frame and a cushion frame. The back frame is not interlocked with the cushion frame and is individually rotated in the forward-and-rearward direction independently of the cushion frame. The cushion frame is not interlocked with the back frame and individually slides in the forward-and-rearward direction independently of the back frame. A front seating state and a rear seating state of a passenger are implemented through individual sliding movement of the cushion frame in the forward-and-rearward direction.

Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a gate stack including an interlayer insulating layers and conductive patterns alternately stacked in a vertical direction on a substrate, a channel structure passing through the gate stack and having an upper end protruding above the gate stack, a memory layer surrounding a sidewall of the channel structure, and a source layer formed on the gate stack. The channel structure includes a core insulating layer extending in a central region of the channel structure in the vertical direction, and a channel layer surrounding a sidewall of the core insulating layer, the channel layer formed to be lower in the vertical direction than the core insulating layer and the memory layer.

Abstract: There are provided a semiconductor memory device and a method of manufacturing a semiconductor memory device. The semiconductor memory device includes a conductive pattern, an etch stop layer on the conductive pattern, a conductive bonding pattern including a contact portion connected to the conductive pattern, and a pad portion extending from the contact portion, a first dielectric layer disposed on the etch stop layer and spaced apart from the conductive bonding pattern, and a second dielectric layer including a first portion surrounding a sidewall of the contact portion of the conductive bonding pattern between the pad portion of the conductive bonding pattern and the etch stop layer, and a second portion extending from the first portion to cover an upper surface of the first dielectric layer.

Abstract: There are provided a semiconductor memory device and a method of manufacturing a semiconductor memory device. The semiconductor memory device includes a conductive pattern, an etch stop layer on the conductive pattern, a conductive bonding pattern including a contact portion connected to the conductive pattern, and a pad portion extending from the contact portion, a first dielectric layer disposed on the etch stop layer and spaced apart from the conductive bonding pattern, and a second dielectric layer including a first portion surrounding a sidewall of the contact portion of the conductive bonding pattern between the pad portion of the conductive bonding pattern and the etch stop layer, and a second portion extending from the first portion to cover an upper surface of the first dielectric layer.

Abstract: The present invention may provide a motor including a shaft, a rotor coupled to the shaft, and a stator disposed to correspond to the rotor, wherein the rotor includes a rotor core, a magnet disposed on an outer surface of the rotor core, and a guide in contact with the rotor core, the guide includes a first member in contact with one side surface of the rotor core and a plurality of second members (420, 430) which extend from the first member in an axial direction and are in contact with a side surface of the magnet, and positions of one side end portions and the other side end portions of the second members are different from each other in a circumferential direction.

Abstract: Provided are crystalline forms of acid addition salts of N-(3-(2-(4-(4-methylpiperazin-1-yl)phenylamino)furo[3,2-d]pyrimidin-4-yloxy)phenyl)acrylamide, and a pharmaceutical composition including the same. The crystalline forms may be easily used in preparing the pharmaceutical composition including the same as an active ingredient.

Abstract: Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Abstract: An additive supply apparatus includes a cartridge configured to accommodate a liquid additive and discharge the additive through a discharge port thereof, a discharge tube connected to the cartridge and configured to guide the additive discharged from the cartridge, a check valve assembly interposed between the cartridge and the discharge tube and configured to selectively open or close the discharge tube and the discharge port of the cartridge based on a change in pressure, a pump configured to generate the pressure to be provided to the check valve assembly, a pressure tube that connects the pump to the check valve assembly and configured to transmit the pressure to the check valve assembly, and a water supply tube coupled to the discharge tube or the check valve assembly and configured to supply washing water to at least one of the discharge tube or the check valve assembly.

Abstract: An apparatus for manufacturing a multi-pane glass unit is provided. The apparatus includes a first plate, a second plate, and a conveyor. The first plate is configured to hold a first glass pane. The second plate is configured to hold a second glass pane such that the second glass pane faces the first glass pane. The conveyer includes a first portion and a second portion. The first portion is configured to convey the first glass pane onto the first plate and the second portion configured to convey the second glass pane onto the second plate.

Abstract: Provided are a glass transportation apparatus and a system including the glass transportation apparatus for manufacturing a multi-pane glass unit. The glass transportation apparatus includes a plate including a main surface facing a main surface of a glass pane, a gas blowing device configured to blow a gas towards the main surface of the glass pane such that the main surface of the glass pane is spaced apart from the main surface of the plate, and a conveyer including a belt having an upper surface and a plurality of pulleys configured to circulate the belt.

Abstract: There is provided a method for training text-based emotion detection language model. The method comprises receiving text data; generating clean data by removing errors included in the received text data; detecting emotion data related to a specific emotion from the clean data and generating a training dataset including the detected emotion data; and training the language model using the training dataset.

Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a gate stack including an interlayer insulating layers and conductive patterns alternately stacked in a vertical direction on a substrate, a channel structure passing through the gate stack and having an upper end protruding above the gate stack, a memory layer surrounding a sidewall of the channel structure, and a source layer formed on the gate stack. The channel structure includes a core insulating layer extending in a central region of the channel structure in the vertical direction, and a channel layer surrounding a sidewall of the core insulating layer, the channel layer formed to be lower in the vertical direction than the core insulating layer and the memory layer.

Abstract: An organic light emitting display device includes a first display area having a plurality of sub-pixel areas therein and a second display area having a plurality of sub-pixel areas and a plurality of transmissive areas therein. The organic light emitting display device includes a plastic substrate including a first portion corresponding to the first display area and a second portion corresponding to the second display area; a plurality of thin film transistors on the plastic substrate to correspond to the plurality of sub-pixel areas; and a plurality of organic light emitting elements on the plurality of thin film transistors to correspond to the plurality of sub-pixel areas, wherein the second portion includes polyimide and a ligand compound, and the first portion includes polyimide with the ligand compound absent therein.