Abstract: The present invention relates to a ceramic composition and a porous ceramic insulating material comprising the same, which is widely used as a core material in sandwich panels or fire doors. The ceramic composition comprises 44-60 wt % of glass powder, 8-15 wt % of fly ash, 4-8 wt % of surface treatment agent, and 23-29 wt % of water glass. The porous ceramic insulating material manufactured from the composition is lightweight and is an environmentally friendly material which generates no toxic gas when it catches fire. The ceramic insulating material can be produced at a low temperature of 800˜900° C., and thus has low production cost. In addition, it can be continuously manufactured in a sheet form.

Abstract: The present invention relates to a ceramic composition and a porous ceramic insulating material comprising the same, which is widely used as a core material in sandwich panels or fire doors. The ceramic composition comprises 44-60 wt % of glass powder, 8-15 wt % of fly ash, 4-8 wt % of intercrete as a surface treatment agent, and 23-29 wt % of water glass. The porous ceramic insulating material manufactured from the composition is lightweight and is an environmentally friendly material which generates no toxic gas when it catches fire. The ceramic insulating material can be produced at a low temperature of 800˜900° C., and thus has low production cost. In addition, it can be continuously manufactured in a sheet form.

Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.

Abstract: An image sensor for reducing crosstalk includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract: The present invention provides a pixel array having a three-dimensional structure and an image sensor having the pixel array. The pixel array has a three-dimensional structure in which a photodiode, a transfer transistor, a reset transistor, a convert transistor, and a select transistor are divided and formed on a first wafer and a second wafer, chips on the first and second wafers are connected in a vertical direction after die-sorting the chips.

Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.

Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.

Abstract: Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.

Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.