Abstract: A thermal image sensor and a method of manufacturing the same are provided. A row electrode and a column electrode are formed on a substrate. A multi-layer stack includes a sensing layer, a first sensing electrode and a second sensing electrode which are in contact with the sensing layer with a channel formed between the first sensing electrode and the second sensing electrode, an absorbing electrode connected to the first sensing electrode, an insulating layer configured to insulate the absorbing electrode from the second sensing electrode and the sensing layer, and a protecting layer configured to cover an exterior. Supports are configured to allow the multi-layer stack to float with respect to the substrate. A first intervening electrode and a second intervening electrode are configured to connect the low electrode and the column electrode to the first sensing electrode and the second sensing electrode through the supports.

Abstract: A thermal image sensor and a method of manufacturing the same are provided. A row electrode and a column electrode are formed on a substrate. A multi-layer stack includes a sensing layer, a first sensing electrode and a second sensing electrode which are in contact with the sensing layer with a channel formed between the first sensing electrode and the second sensing electrode, an absorbing electrode connected to the first sensing electrode, an insulating layer configured to insulate the absorbing electrode from the second sensing electrode and the sensing layer, and a protecting layer configured to cover an exterior. Supports are configured to allow the multi-layer stack to float with respect to the substrate. A first intervening electrode and a second intervening electrode are configured to connect the low electrode and the column electrode to the first sensing electrode and the second sensing electrode through the supports.

Abstract: A microbolometer-based thermal imaging sensor includes a pixel array including at least one first pixel, and at least one second pixel having a lower light absorbance than light absorbance of the at least one first pixel, and a processor configured to obtain a first resistance change of the at least one second pixel and obtain a second resistance change of the at least one first pixel based on the first resistance change of the at least one second pixel.

Abstract: A microbolometer and a method of manufacturing the same are provided. The microbolometer may include a substrate, an absorption layer configured to absorb incoming light in a specific wavelength range and including an absorption body configured to float from the substrate and electrically isolated by a channel; a resistance layer provided between the substrate and the absorption body of the absorption layer and having a resistance value that changes based on temperature variations caused by thermal energy absorbed through the absorption layer; and a resistance reduction layer provided between the absorption layer and the resistance layer to reduce interface resistance and divided by a channel correspond to the channel of the absorption layer.

Abstract: A thermal image sensor and a method of manufacturing the same. The thermal image sensor includes: a substrate; a row electrode and a column electrode on the substrate; a multi-layer stack including an absorption layer and a temperature sensor; supporting arms that extend from diagonal corners of the multi-layer stack and that are spaced apart from both sides of the multi-layer stack, wherein the supporting arms have a concave-convex shape including a plurality of concave portions and a plurality of convex portions; and legs protruding from the row electrode and the column electrode, wherein the legs are connected to extended ends of the supporting arms to allow the multi-layer stack to float above the substrate.

Abstract: A display panel including a display part including a plurality of sub-pixels configured to display a plurality of colors, and a plurality of data lines connected with the sub-pixels; a first test part configured to supply a test signal to (2K?1)th data lines (‘K’ is an integer above 0) by each color for the sub-pixels among the plurality of data lines; and a second test part configured to supply a test signal to 2Kth data lines by each color for the sub-pixels among the plurality of data lines when the first test part supplies the test signal. Further, a polarity of the test signal supplied by the second test part is opposite to a polarity of the test signal supplied by the first test part.

Abstract: A method and apparatus for managing a key for secure storage of data. The apparatus includes a main controller configured to process a command, a cipher unit configured to encrypt a first key to form an encrypted key or encrypt data to form encrypted data based on a result of the main controller processing the command, and decrypt the encrypted key or the encrypted data based on the result of the main controller processing the command, a hash unit configured to hash the first key according to control of the main controller, a decrypted key memory configured to store the first key, and an encrypted key memory configured to store the encrypted key.

Abstract: A display panel including a display part including a plurality of sub-pixels configured to display a plurality of colors, and a plurality of data lines connected with the sub-pixels; a first test part configured to supply a test signal to (2K?1)th data lines (‘K’ is an integer above 0) by each color for the sub-pixels among the plurality of data lines; and a second test part configured to supply a test signal to 2Kth data lines by each color for the sub-pixels among the plurality of data lines when the first test part supplies the test signal. Further, a polarity of the test signal supplied by the second test part is opposite to a polarity of the test signal supplied by the first test part.

Abstract: A method and apparatus for managing a key for secure storage of data. The apparatus includes a main controller configured to process a command, a cipher unit configured to encrypt a first key to form an encrypted key or encrypt data to form encrypted data based on a result of the main controller processing the command, and decrypt the encrypted key or the encrypted data based on the result of the main controller processing the command, a hash unit configured to hash the first key according to control of the main controller, a decrypted key memory configured to store the first key, and an encrypted key memory configured to store the encrypted key.

Abstract: A method and apparatus for adaptively transmitting the same data, i.e., multicast/broadcast data, according to channel quality to a receiving group including one or more terminals that request the same service in a wireless network. A base station obtains feedback on channel quality indications (CQIs) from a plurality of terminals, selects a transmission technique that satisfies desired service quality based on the CQIs, and transmits data to the terminals included in a receiving group by using the selected transmission technique. The CQIs to be transmitted from the terminals in the receiving group to the base station are transmitted through a previously allocated common CQI feedback channel. In the present invention, in order to reduce a CQI feedback channel capacity, the base station does not allocate a common CQI feedback channel with respect to each reception terminal and allocates radio resources according to CQI levels.

Abstract: A method and apparatus for adaptively transmitting the same data, i.e., multicast/broadcast data, according to channel quality to a receiving group including one or more terminals that request the same service in a wireless network. A base station obtains feedback on channel quality indications (CQIs) from a plurality of terminals, selects a transmission technique that satisfies desired service quality based on the COIs, and transmits data to the terminals included in a receiving group by using the selected transmission technique. The CQIs to be transmitted from the terminals in the receiving group to the base station are transmitted through a previously allocated common CQI feedback channel. In the present invention, in order to reduce a CQI feedback channel capacity, the base station does not allocate a common CQI feedback channel with respect to each reception terminal and allocates radio resources according to CQI levels.

Abstract: Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

Abstract: The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated. This method comprises the steps of: forming a semiconductor layer or a metal thin film on a transparent or semi-transparent substrate; forming a single crystal seed region on the substrate of the desired size by a crystallization method using laser irradiation; and converting the desired region of the semiconductor layer or metal thin film into a single crystal region, using the single crystal seed region.

Abstract: Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

Abstract: A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

Abstract: Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nth laser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.

Abstract: Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

Abstract: The present invention relates to a method for fabricating a single crystal silicon thin film at the desired location to the desired size from an amorphous or polycrystalline thin film on a substrate using laser irradiation and laser beam movement along the substrate having the semiconductor thin films being irradiated. This method comprises the steps of: forming a semiconductor layer or a metal thin film on a transparent or semi-transparent substrate; forming a single crystal seed region on the substrate of the desired size by a crystallization method using laser irradiation; and converting the desired region of the semiconductor layer or metal thin film into a single crystal region, using the single crystal seed region.

Abstract: The present invention relates to computer network based communication system and method in which voice/data composite communication can be made regardless of communication means, location, time, and kinds of communication appliances by using a unique and lifelong individual identification number. To this end, the present invention provides a communication system comprising a web server for managing communication information including a network identification number and a user identification number which is assigned to the user and then registered, a gateway for setting communication channels between a public network connected with telephones and an internet network connected with terminals, and a gatekeeper for authenticating a communication service required by the terminals and dynamically matching the identification number for communication with an IP address, whereby voice/data communication can be made between the telephones and the terminals.

Abstract: A method of fabricating a liquid crystal display with reduced contact resistance is provided. The method comprises the steps of: depositing a buffer layer on a gate layer; and performing a thermal process to diffuse metal atoms of the buffer layer on the upper part of the gate, thereby forming a diffusion layer.