Abstract: A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.

Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.

Abstract: A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.

Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.

Abstract: An integrated circuit device includes channel structures extending from a substrate in a vertical direction, memory cell strings disposed along the plurality of channel structures, gate lines spaced apart from one another in the vertical direction and including erase control lines and string selection lines, and driving transistors including erase control driving transistors connected to the erase control lines and string selection driving transistors connected to the string selection lines.

Abstract: An integrated circuit device includes channel structures extending from a substrate in a vertical direction, memory cell strings disposed along the plurality of channel structures, gate lines spaced apart from one another in the vertical direction and including erase control lines and string selection lines, and driving transistors including erase control driving transistors connected to the erase control lines and string selection driving transistors connected to the string selection lines.

Abstract: Integrated circuit devices may include a plurality of word line structures and a plurality of insulating films that are stacked alternately. Sides of the plurality of word line structures and the plurality of insulating films define a side of a channel hole extending through the plurality of word line structures and the plurality of insulating films. The devices may also include a blocking dielectric film on the side of the channel hole, and a plurality of charge storage films on the blocking dielectric film and on the sides of the plurality of word line structures, respectively. Each of the plurality of charge storage films may include a first charge storage film and a second charge storage film sequentially stacked on a respective one of the sides of the plurality of word line structures. A surface of the second charge storage film may include a recess in a middle portion thereof.

Abstract: A three-dimensional semiconductor device includes a stacked structure on a lower structure, the stacked structure including a lower group including gate electrodes vertically stacked and spaced apart from each other, and an upper group including gate electrodes vertically stacked and spaced apart, the lower group and the upper group being vertically stacked, and a vertical structure passing through the stacked structure. The vertical structure may include a vertical core pattern, a vertical buffer portion therein, and a surrounding vertical semiconductor layer, the vertical structure may include a lower vertical portion passing through the lower group and an upper vertical portion passing through the upper group, an upper region of the lower vertical portion may have a width greater than that of a lower region of the upper vertical portion. The vertical buffer portion may be in the lower vertical portion and below the upper vertical portion.

Abstract: A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.

Abstract: A non-volatile memory device including: a memory cell array including non-volatile memory blocks connected to a plurality of word lines, a plurality of bit lines and a common source line; a common source line driver configured to supply a common source line voltage to the common source line; a page buffer unit configured to supply a bit line voltage to at least one of the plurality of bit lines; a control logic circuit configured to adjust the common source line voltage and the bit line voltage; and a channel initialization circuit, wherein the channel initialization circuit sets the common source line voltage and the bit line voltage to an initialization pulse, and the channel initialization circuit applies the initialization pulse between a plurality of read sections in which a read voltage is applied to at least two of the plurality of word lines.

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: A non-volatile memory device including: a memory cell array including non-volatile memory blocks connected to a plurality of word lines, a plurality of bit lines and a common source line; a common source line driver configured to supply a common source line voltage to the common source line; a page buffer unit configured to supply a bit line voltage to at least one of the plurality of bit lines; a control logic circuit configured to adjust the common source line voltage and the bit line voltage; and a channel initialization circuit, wherein the channel initialization circuit sets the common source line voltage and the bit line voltage to an initialization pulse, and the channel initialization circuit applies the initialization pulse between a plurality of read sections in which a read voltage is applied to at least two of the plurality of word lines.

Abstract: Integrated circuit devices may include a plurality of word line structures and a plurality of insulating films that are stacked alternately. Sides of the plurality of word line structures and the plurality of insulating films define a side of a channel hole extending through the plurality of word line structures and the plurality of insulating films. The devices may also include a blocking dielectric film on the side of the channel hole, and a plurality of charge storage films on the blocking dielectric film and on the sides of the plurality of word line structures, respectively. Each of the plurality of charge storage films may include a first charge storage film and a second charge storage film sequentially stacked on a respective one of the sides of the plurality of word line structures. A surface of the second charge storage film may include a recess in a middle portion thereof.

Abstract: A semiconductor memory device includes a stacked structure on a substrate and a vertical structure penetrating the stacked structure. The stacked structured includes a plurality of conductive lines stacked on the substrate. The vertical structure may include a vertical insulating pattern and a channel film extending along sidewalls of the vertical insulating pattern. The vertical insulating pattern may include an inner region and an outer region. The outer region of the vertical insulating pattern may be placed between the channel film and the inner region of the vertical insulating pattern, and the outer region of the vertical insulating pattern may include a diffused metal.

Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.

Abstract: Integrated circuit devices may include a plurality of word line structures and a plurality of insulating films that are stacked alternately. Sides of the plurality of word line structures and the plurality of insulating films define a side of a channel hole extending through the plurality of word line structures and the plurality of insulating films. The devices may also include a blocking dielectric film on the side of the channel hole, and a plurality of charge storage films on the blocking dielectric film and on the sides of the plurality of word line structures, respectively. Each of the plurality of charge storage films may include a first charge storage film and a second charge storage film sequentially stacked on a respective one of the sides of the plurality of word line structures. A surface of the second charge storage film may include a recess in a middle portion thereof.

Abstract: An integrated circuit device includes channel structures extending from a substrate in a vertical direction, memory cell strings disposed along the plurality of channel structures, gate lines spaced apart from one another in the vertical direction and including erase control lines and string selection lines, and driving transistors including erase control driving transistors connected to the erase control lines and string selection driving transistors connected to the string selection lines.

Abstract: An integrated circuit device includes channel structures extending from a substrate in a vertical direction, memory cell strings disposed along the plurality of channel structures, gate lines spaced apart from one another in the vertical direction and including erase control lines and string selection lines, and driving transistors including erase control driving transistors connected to the erase control lines and string selection driving transistors connected to the string selection lines.

Abstract: A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.