Patents by Inventor Jaegwan Chung

Jaegwan Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conductor and method of manufacturing the same
    Patent number: 11508929
    Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 ?/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: November 22, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dongjin Yun, Sunghoon Park, Seong Heon Kim, Hyangsook Lee, Woon Jung Paek, Youngnam Kwon, Yongsu Kim, Jaegwan Chung
  • CONDUCTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20190334110
    Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 ?/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.
    Type: Application
    Filed: July 9, 2019
    Publication date: October 31, 2019
    Inventors: Dongjin YUN, Sunghoon PARK, Seong Heon KIM, Hyangsook LEE, Woon Jung PAEK, Youngnam KWON, Yongsu KIM, Jaegwan CHUNG
  • CONDUCTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160226012
    Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 ?/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.
    Type: Application
    Filed: June 30, 2015
    Publication date: August 4, 2016
    Inventors: Dongjin YUN, Sunghoon PARK, Seong Heon KIM, Hyangsook LEE, Woon Jung PAEK, Youngnam KWON, Yongsu KIM, Jaegwan CHUNG
  • Silica nanowire comprising silicon nanodots and method of preparing the same
    Patent number: 8115189
    Abstract: Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like.
    Type: Grant
    Filed: May 1, 2009
    Date of Patent: February 14, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gyeongsu Park, Eunkyung Lee, Jaehak Lee, Byounglyong Choi, Jaegwan Chung, Sung Heo
  • SILICA NANOWIRE COMPRISING SILICON NANODOTS AND METHOD OF PREPARING THE SAME
    Publication number: 20100006820
    Abstract: Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like.
    Type: Application
    Filed: May 1, 2009
    Publication date: January 14, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gyeongsu PARK, Eunkyung LEE, Jaehak LEE, Byounglyong CHOI, Jaegwan CHUNG, Sung HEO