Abstract: Methods of fabricating a semiconductor package may include forming a first barrier layer on a first carrier, forming a sacrificial layer, including an opening that exposes at least a portion of the first barrier layer, on the first barrier layer, and forming a second barrier layer on the first barrier layer and on the sacrificial layer. The second barrier layer may include a portion formed on the sacrificial layer.

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip on a substrate, a barrier layer on the first semiconductor chip and the second semiconductor chip, the barrier layer having an opening through which at least a part of the first semiconductor chip is exposed, and a heat transfer part on the barrier layer, the heat transfer part extending along an upper face of the barrier layer and filling the opening.

Abstract: Provided is a semiconductor package including a first wiring structure extending in a first direction and a second crossing the first direction, a first semiconductor chip stacked on the first wiring structure in a third direction different from the first direction and the second direction, a second wiring structure on the first semiconductor chip, the second wiring structure including an insulating layer and a first metal layer on the insulating layer, and a marking plate on the first metal layer, the marking plate including a first marking region and a second marking region different from the first marking region, wherein a shape of the first metal layer corresponding to the first marking region and a shape of the first metal layer corresponding to the second marking region are different from each other, and wherein a shape of an uneven structure in the first marking region and a shape of an uneven structure in the second marking region are different from each other.

Abstract: A method for fabricating a semiconductor package, the method including: forming a release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer.

Abstract: A semiconductor package including a passivation film, a mold layer on the passivation film, a connecting pad having a T shape, the T shape including a first portion and a second portion on the first portion, the first portion penetrating the passivation film, the second portion penetrating a part of the mold layer, a solder ball on the first portion of the connecting pad, an element on the second portion of the connecting pad, a wiring structure on the mold layer, the wiring structure including an insulating layer and a wiring pattern inside the insulating layer, and a semiconductor chip on the wiring structure may be provided.

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip on a substrate, a barrier layer on the first semiconductor chip and the second semiconductor chip, the barrier layer having an opening through which at least a part of the first semiconductor chip is exposed, and a heat transfer part on the barrier layer, the heat transfer part extending along an upper face of the barrier layer and filling the opening.

Abstract: Methods of fabricating a semiconductor package may include forming a first barrier layer on a first carrier, forming a sacrificial layer, including an opening that exposes at least a portion of the first barrier layer, on the first barrier layer, and forming a second barrier layer on the first barrier layer and on the sacrificial layer. The second barrier layer may include a portion formed on the sacrificial layer.

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip on a substrate, a barrier layer on the first semiconductor chip and the second semiconductor chip, the barrier layer having an opening through which at least a part of the first semiconductor chip is exposed, and a heat transfer part on the barrier layer, the heat transfer part extending along an upper face of the barrier layer and filling the opening.

Abstract: A method for fabricating a semiconductor package, the method including: forming a. release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer.

Abstract: Methods of fabricating a semiconductor package may include forming a first barrier layer on a first carrier, forming a sacrificial layer, including an opening that exposes at least a portion of the first barrier layer, on the first barrier layer, and forming a second barrier layer on the first barrier layer and on the sacrificial layer. The second barrier layer may include a portion formed on the sacrificial layer.

Abstract: A method for fabricating a semiconductor package, the method including: forming a release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer.

Abstract: A semiconductor package having a redistribution structure including a first face and a second face and a first semiconductor chip mounted on the first face. The semiconductor package may further include a first redistribution pad exposed from the second face of the redistribution structure and a second redistribution pad exposed from the second face of the redistribution structure. The semiconductor package may further include a first solder ball being in contact with the first redistribution pad and a second solder ball being in contact with the second redistribution pad. In some embodiments, a first distance of the first redistribution pad is smaller than a second distance of the second redistribution pad, the first and second distances are measured with respect to a reference plane that intersects a lower portion of the first solder ball and a lower portion of the second solder ball.

Abstract: A method for fabricating a semiconductor package, the method including: forming a release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer.

Abstract: Methods of fabricating a semiconductor package may include forming a first barrier layer on a first carrier, forming a sacrificial layer, including an opening that exposes at least a portion of the first barrier layer, on the first barrier layer, and forming a second barrier layer on the first barrier layer and on the sacrificial layer. The second barrier layer may include a portion formed on the sacrificial layer.

Abstract: A semiconductor package having a redistribution structure including a first face and a second face and a first semiconductor chip mounted on the first face. The semiconductor package may further include a first redistribution pad exposed from the second face of the redistribution structure and a second redistribution pad exposed from the second face of the redistribution structure. The semiconductor package may further include a first solder ball being in contact with the first redistribution pad and a second solder ball being in contact with the second redistribution pad. In some embodiments, a first distance of the first redistribution pad is smaller than a second distance of the second redistribution pad, the first and second distances are measured with respect to a reference plane that intersects a lower portion of the first solder ball and a lower portion of the second solder ball.

Abstract: In one embodiment, a magneto-resistive chip package includes a circuit board; a shielding body including a shielding base part positioned on the circuit board and a shielding intermediate part extending from one side of the shielding base part; a magneto-resistive chip positioned on the shielding base part and including a magneto-resistive cell array; an internal connection part electrically connecting the magneto-resistive chip to the circuit board; an encapsulation part encapsulating the magneto-resistive chip on the circuit board, and having an upper surface that is higher than an upper surface of the magneto-resistive chip; and a shielding cover positioned on the shielding intermediate part, and on the encapsulation part.

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip on a substrate, a barrier layer on the first semiconductor chip and the second semiconductor chip, the barrier layer having an opening through which at least a part of the first semiconductor chip is exposed, and a heat transfer part on the barrier layer, the heat transfer part extending along an upper face of the barrier layer and filling the opening.

Abstract: In one embodiment, a magneto-resistive chip package includes a circuit board; a shielding body including a shielding base part positioned on the circuit board and a shielding intermediate part extending from one side of the shielding base part; a magneto-resistive chip positioned on the shielding base part and including a magneto-resistive cell array; an internal connection part electrically connecting the magneto-resistive chip to the circuit board; an encapsulation part encapsulating the magneto-resistive chip on the circuit board, and having an upper surface that is higher than an upper surface of the magneto-resistive chip; and a shielding cover positioned on the shielding intermediate part, and on the encapsulation part.

Abstract: In one embodiment, a magneto-resistive chip package includes a circuit board; a shielding body including a shielding base part positioned on the circuit board and a shielding intermediate part extending from one side of the shielding base part; a magneto-resistive chip positioned on the shielding base part and including a magneto-resistive cell array; an internal connection part electrically connecting the magneto-resistive chip to the circuit board; an encapsulation part encapsulating the magneto-resistive chip on the circuit board, and having an upper surface that is higher than an upper surface of the magneto-resistive chip; and a shielding cover positioned on the shielding intermediate part, and on the encapsulation part.

Abstract: In one embodiment, a semiconductor device comprising, a substrate comprising a wiring layer, a first conductive shielding layer disposed on the substrate and electrically isolated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface, a semiconductor chip disposed on the first conductive shielding layer, a molding member disposed over the first conductive shielding layer to cover the semiconductor chip, a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface, and a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface.