Patents by Inventor Jaegyu PARK
Jaegyu PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170309589Abstract: Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device according to an embodiment of the inventive concept includes a first semiconductor chip having a recess portion in one surface thereof; a first adhesion pattern filled within the recess portion of the first semiconductor chip; and a second semiconductor chip disposed on the first adhesion pattern. The second semiconductor chip may represent improved heat dissipation characteristics.Type: ApplicationFiled: February 2, 2017Publication date: October 26, 2017Inventors: Myungjoon KWACK, Gyungock KIM, Jaegyu PARK, Jin Hyuk OH, Jiho JOO
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Publication number: 20170269298Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.Type: ApplicationFiled: May 30, 2017Publication date: September 21, 2017Applicant: Electronics and Telecommunications Research InstituteInventors: Gyungock KIM, Hyundai PARK, In Gyoo KIM, Sang Hoon KIM, Ki Seok JANG, Sang Gi KIM, Jiho JOO, Yongseok CHOI, Hyuk Je KWON, Jaegyu PARK, Sun Ae KIM, Jin Hyuk OH, myung joon KWACK
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Publication number: 20170261705Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.Type: ApplicationFiled: May 30, 2017Publication date: September 14, 2017Applicant: Electronics and Telecommunications Research Instit uteInventors: Gyungock KIM, Hyundai PARK, In Gyoo KIM, Sang Hoon KIM, Ki Seok JANG, Sang Gi KIM, Jiho JOO, Yongseok CHOI, Hyuk Je KWON, Jaegyu PARK, Sun Ae KIM, Jin Hyuk OH, Myung Joon KWACK
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Patent number: 9728657Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.Type: GrantFiled: July 29, 2015Date of Patent: August 8, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jiho Joo, Gyungock Kim, Myungjoon Kwack, Sang Hoon Kim, Sun Ae Kim, In Gyoo Kim, Jaegyu Park, Jin Hyuk Oh, Ki Seok Jang
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Patent number: 9690042Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.Type: GrantFiled: October 24, 2013Date of Patent: June 27, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Gyungock Kim, Hyundai Park, In Gyoo Kim, Sang Hoon Kim, Ki Seok Jang, Sang Gi Kim, Jiho Joo, Yongseok Choi, Hyuk Je Kwon, Jaegyu Park, Sun Ae Kim, Jin Hyuk Oh, Myung Joon Kwack
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Publication number: 20170168238Abstract: Provided is a wavelength division device. The wavelength division device includes input arrayed waveguides, an input circular grating coupler connected to one ends of the input arrayed waveguides and configured to refract first light having a plurality of wavelengths and output the refracted first light to each of the one ends of the input arrayed waveguides as plurality of second light, and an output star coupler connected to the other ends of the input arrayed waveguides and configured to receive the plurality of second light from the other ends of the input arrayed waveguides and output optical signals that are divided for each wavelength. The input circular grating coupler includes a plurality of circular gratings.Type: ApplicationFiled: November 9, 2016Publication date: June 15, 2017Inventors: Jaegyu PARK, Myungjoon KWACK, Gyungock KIM, Jiho JOO
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Patent number: 9507087Abstract: Provided is a wavelength combiner including a slab waveguide; an output waveguide extended from the slab waveguide in a first direction; and at least one rib waveguide disposed at an interval horizontally from the output waveguide and extended from the slab waveguide in the first direction, wherein the rib waveguide is tapered in the first direction.Type: GrantFiled: August 14, 2015Date of Patent: November 29, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jaegyu Park, Myungjoon Kwack, Gyungock Kim, Jiho Joo
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Patent number: 9459409Abstract: An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.Type: GrantFiled: August 6, 2015Date of Patent: October 4, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Myungjoon Kwack, Gyungock Kim, Jaegyu Park, Ki Seok Jang, Jiho Joo
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Publication number: 20160259126Abstract: An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.Type: ApplicationFiled: August 6, 2015Publication date: September 8, 2016Inventors: Myungjoon KWACK, Gyungock KIM, Jaegyu PARK, Ki Seok JANG, Jiho JOO
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Publication number: 20160223745Abstract: Provided is a wavelength combiner including a slab waveguide; an output waveguide extended from the slab waveguide in a first direction; and at least one rib waveguide disposed at an interval horizontally from the output waveguide and extended from the slab waveguide in the first direction, wherein the rib waveguide is tapered in the first direction.Type: ApplicationFiled: August 14, 2015Publication date: August 4, 2016Inventors: Jaegyu PARK, Myungjoon KWACK, Gyungock KIM, Jiho JOO
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Publication number: 20160211402Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.Type: ApplicationFiled: July 29, 2015Publication date: July 21, 2016Inventors: Jiho JOO, Gyungock KIM, Myungjoon KWACK, Sang Hoon KIM, Sun Ae KIM, In Gyoo KIM, Jaegyu PARK, Jin Hyuk OH, Ki Seok JANG
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Patent number: 9360621Abstract: Provided is a flat-top mode generating device. The flat-top mode generating device includes an input waveguide, a double-tapered structure connected to the input waveguide, and an input star coupler connected to the double-tapered structure. The double-tapered structure includes a first part having a first height hat is equal to that of each of the input waveguide and the input star coupler, and a second part disposed in the first part on the plane and having a second height that is less than the first height, the second part being tapered from the input star coupler toward the input waveguide.Type: GrantFiled: August 6, 2015Date of Patent: June 7, 2016Assignee: ELECTRONICS AND TELECOMMUNCATIONS RESEARCH INSTITUTEInventors: Jaegyu Park, Myungjoon Kwack, Gyungock Kim, Jiho Joo
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Patent number: 9316792Abstract: Provided are an optical coupler and an optical device including the same. The optical coupler includes: a substrate; a buffer layer on the substrate; and an optical coupling layer including a horizontal mode expander layer and a vertical mode expander layer, wherein the horizontal mode expander layer expands in one direction on the buffer layer, and wherein the vertical mode expander layer adjusts a stepped difference between the horizontal mode expander layer and a plurality of optical transmission devices having different diameters or sectional areas and connected to both sides of the horizontal mode expander layer, and the vertical mode expander layer is disposed on a side of the horizontal mode expander layer to minimize optical loss between the plurality of optical transmission devices.Type: GrantFiled: January 20, 2014Date of Patent: April 19, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Hyundai Park, Taeyong Kim, JiHo Joo, Jaegyu Park, Gyungock Kim
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Patent number: 9231372Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.Type: GrantFiled: May 16, 2014Date of Patent: January 5, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: In Gyoo Kim, Sang Hoon Kim, Jaegyu Park, Gyungock Kim, Ki Seok Jang
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Patent number: 9164238Abstract: Provided are an optical coupler and an arrayed-waveguide grating structure including the same. The coupler includes a lower clad layer, a core comprising a slab waveguide region disposed on one side of the lower clad layer and a ridge waveguide region disposed on the other side of the lower clad layer, and an upper clad disposed on the core, wherein the ridge waveguide region comprises a self-focusing region configured to focus an optical signal provided form the slab waveguide region and thus to prevent scattering of the optical signal.Type: GrantFiled: July 11, 2014Date of Patent: October 20, 2015Assignee: Electronics and Telecommunications Research InstituteInventors: Jaegyu Park, Hyundai Park, Jiho Joo, Myung joon Kwack, Gyungock Kim
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Publication number: 20150277054Abstract: Provided are an optical coupler and an optical device including the same. The optical coupler includes: a substrate; a buffer layer on the substrate; and an optical coupling layer including a horizontal mode expander layer and a vertical mode expander layer, wherein the horizontal mode expander layer expands in one direction on the buffer layer, and wherein the vertical mode expander layer adjusts a stepped difference between the horizontal mode expander layer and a plurality of optical transmission devices having different diameters or sectional areas and connected to both sides of the horizontal mode expander layer, and the vertical mode expander layer is disposed on a side of the horizontal mode expander layer to minimize optical loss between the plurality of optical transmission devices.Type: ApplicationFiled: January 20, 2014Publication date: October 1, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Hyundai PARK, Taeyong KIM, JiHo JOO, Jaegyu PARK, Gyungock KIM
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Publication number: 20150146755Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.Type: ApplicationFiled: May 16, 2014Publication date: May 28, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: In Gyoo KIM, Sang Hoon KIM, Jaegyu PARK, Gyungock KIM, Ki Seok JANG
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Publication number: 20150078708Abstract: Provided are an optical coupler and an arrayed-waveguide grating structure including the same. The coupler includes a lower clad layer, a core comprising a slab waveguide region disposed on one side of the lower clad layer and a ridge waveguide region disposed on the other side of the lower clad layer, and an upper clad disposed on the core, wherein the ridge waveguide region comprises a self-focusing region configured to focus an optical signal provided form the slab waveguide region and thus to prevent scattering of the optical signal.Type: ApplicationFiled: July 11, 2014Publication date: March 19, 2015Inventors: Jaegyu PARK, Hyundai PARK, Jiho JOO, Myung joon KWACK, Gyungock KIM
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Publication number: 20150030282Abstract: Provided is an optical device including a first optical waveguide on one side of a substrate; a laser separated from the first optical waveguide and disposed on the other side of the substrate; and a first coupled waveguide between the laser and the first optical waveguide. The laser may be monolithically integrated on the substrate.Type: ApplicationFiled: January 16, 2014Publication date: January 29, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Hyundai PARK, Jaegyu PARK, JiHo JOO, Gyungock KIM
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Patent number: 8903208Abstract: Provided are a waveguide with a reduced phase error and a photonics device including the same. The waveguide structure may include a lower clad, a core pattern with at least one bending region, on the lower clad, a beam deflecting pattern on the core pattern, and an upper clad covering the core pattern provided with the beam deflecting pattern. The beam deflecting pattern may be formed of a material, whose refractive index may be higher than that of the upper clad and may be lower than or equivalent to that of the core pattern, and the beam deflecting pattern has an increasing and decreasing width or an oscillating width, when measured along the bending region.Type: GrantFiled: June 10, 2013Date of Patent: December 2, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Jaegyu Park, Sahnggi Park, Gyungock Kim