Abstract: An image sensor includes a first semiconductor chip which extends in first and second directions that intersect each other, and having a pixel part including a plurality of pixel regions; and a second semiconductor chip including a circuit part electrically connected to the pixel part, on the first semiconductor chip. The pixel part includes a photodiode, a floating diffusion node which accumulates photocharges generated by the photodiode, and a first source follower which amplifies and outputs a signal corresponding to a change in potential of the floating diffusion node. The circuit part includes a first pre-charge selection transistor connected between a first node and a second node, a second pre-charge selection transistor connected to the first pre-charge selection transistor, and a pre-charge transistor which pre-charges the second node connected to the first source follower. The plurality of pixel regions share the pre-charge transistor.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: A method of manufacturing a printed circuit board includes providing an insulating layer, forming a plating seed layer on the insulating layer, forming a first circuit pattern on the plating seed layer and a second circuit pattern on the first circuit pattern, and forming a top metal layer on the second circuit pattern. The second circuit pattern can be thinner than the first circuit pattern, and the top metal layer can be wider than the second circuit pattern.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: An image sensor includes: a substrate including a first area and a second area; a plurality of unit pixels disposed in the substrate, wherein each of the plurality of unit pixels includes a photoelectric conversion layer; a pixel defining pattern separating the unit pixels from each other; a surface insulating film disposed on the substrate; a line structure disposed on the substrate, and including a first interline insulating film and a wire pattern disposed in the first interline insulating film; a micro-lens disposed in the first area; and a light-blocking film disposed in the second area. The light-blocking film includes: a horizontal light-blocking film extending along a top surface of the surface insulating film; and a vertical light-blocking film extending through the surface insulating film and the substrate. The vertical light-blocking film is electrically connected to the wire pattern. The light-blocking film is electrically connected to the pixel defining pattern.

Abstract: An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: A method of manufacturing a printed circuit board includes providing an insulating layer, forming a plating seed layer on the insulating layer, forming a first circuit pattern on the plating seed layer and a second circuit pattern on the first circuit pattern, and forming a top metal layer on the second circuit pattern. The second circuit pattern can be thinner than the first circuit pattern, and the top metal layer can be wider than the second circuit pattern.

Abstract: An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate.

Abstract: A method of manufacturing a printed circuit board includes providing an insulating layer, forming a plating seed layer on the insulating layer, forming a first circuit pattern on the plating seed layer and a second circuit pattern on the first circuit pattern, and forming a top metal layer on the second circuit pattern. The second circuit pattern can be thinner than the first circuit pattern, and the top metal layer can be wider than the second circuit pattern.

Abstract: Disclosed are a printed circuit board and a method of manufacturing the printed circuit board. The printed circuit board includes an insulating layer, and a circuit pattern formed on the insulating layer, wherein the circuit pattern includes a first circuit pattern formed on the insulating layer and including a corner portion of an upper portion which has a predetermined curvature and a second circuit pattern formed on the first circuit pattern and configured to cover an upper surface of the first circuit pattern including the corner portion.

Abstract: Disclosed are a printed circuit board and a method of manufacturing the printed circuit board. The printed circuit board includes an insulating layer, and a circuit pattern formed on the insulating layer, wherein the circuit pattern includes a first circuit pattern formed on the insulating layer and including a corner portion of an upper portion which has a predetermined curvature and a second circuit pattern formed on the first circuit pattern and configured to cover an upper surface of the first circuit pattern including the corner portion.

Abstract: Disclosed are a printed circuit board and a method of manufacturing the printed circuit board. The printed circuit board includes an insulating layer, and a circuit pattern formed on the insulating layer, wherein the circuit pattern includes a first circuit pattern formed on the insulating layer and including a corner portion of an upper portion which has a predetermined curvature and a second circuit pattern formed on the first circuit pattern and configured to cover an upper surface of the first circuit pattern including the corner portion.

Abstract: An apparatus and a method for estimating a channel in a broadband wireless access system. A receiving apparatus includes a first channel estimation filter having a tap coefficient which is channel-adaptively variable, the first channel estimation filter acquiring a channel impulse response by filtering received pilot symbols, a second channel estimation filter having a fixed tap coefficient, the second channel estimation filter acquiring a channel impulse response by filtering received pilot symbols, and a selector which selects the operation of one of the first and the second channel estimation filters according to channel correlativity.

Abstract: A method of preparing 2-deoxy-L-ribose represented by the following formula I is disclosed. The preparation method includes the steps of: treating L-arabinose with an alcohol solvent in the presence of an acid to prepare 1-alkoxy-L-arabinopyranose; allowing the prepared 1-alkoxy-L-arabinopyranose to react with acyl chloride so as to prepare 1-alkoxy-2,3,4-triacyl-L-arabinopyranose; brominating the alkoxy group of the prepared 1-alkoxy-2,3,4-triacyl-L-arabinopyranose to prepare a 1-bromo-2,3,4-triacyl compound; allowing the prepared compound to react with zinc in the presence of ethyl acetate and an organic base so as to prepare glycal; treating the glycal with an alcohol solvent in the presence of an acid to prepare 1-alkoxy-2-deoxy-3,4-diacyl-L-ribopyranose; treating the prepared 1-alkoxy-2-deoxy-3,4-diacyl-L-ribopyranose with a base to prepare 1-alkoxy-2-deoxy-L-ribopyranose; and hydrolyzing the prepared 1-alkoxy-2-deoxy-L-ribopyranose in the presence of an acid catalyst.

Abstract: A method of preparing 2-deoxy-L-ribose represented by the following formula I is disclosed. The preparation method includes the steps of: treating L-arabinose with an alcohol solvent in the presence of an acid to prepare 1-alkoxy-L-arabinopyranose; allowing the prepared 1-alkoxy-L-arabinopyranose to react with acyl chloride so as to prepare 1-alkoxy-2,3,4-triacyl-L-arabinopyranose; brominating the alkoxy group of the prepared 1-alkoxy-2,3,4-triacyl-L-arabinopyranose to prepare a 1-bromo-2,3,4-triacyl compound; allowing the prepared compound to react with zinc in the presence of ethyl acetate and an organic base so as to prepare glycal; treating the glycal with an alcohol solvent in the presence of an acid to prepare 1-alkoxy-2-deoxy-3,4-diacyl-L-ribopyranose; treating the prepared 1-alkoxy-2-deoxy-3,4-diacyl-L-ribopyranose with a base to prepare 1-alkoxy-2-deoxy-L-ribopyranose; and hydrolyzing the prepared 1-alkoxy-2-deoxy-L-ribopyranose in the presence of an acid catalyst.

Abstract: This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oglimers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein E is nitrogen or C—R?; J is sulfur or oxygen; R?, R1, R2, R3, R4 is independently H, halogen, alkyl, nitro, nitrile, alkoxy, halogenated alkyl, halogenated alkoxy, phenyl or halogenated phenyl, R5 is H or protected or unprotected side chain of natural or unnatural ?-amino acid; and B is a natural or unnatural nucleobase, wherein when said nucleobase has an exocyclic amino function, said function is protected by protecting group which is labile to acids but stable to weak to medium bases in the presence of thiol.

Abstract: This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein E is nitrogen or C—R?; J is sulfur or oxygen; R?, R1, R2, R3, R4 is independently H, halogen, alkyl, nitro, nitrile, alkoxy, halogenated alkyl, halogenated alkoxy, phenyl or halogenated phenyl, R5 is H or protected or unprotected side chain of natural or unnatural ?-amino acid; and B is a natural or unnatural nucleobase, wherein when said nucleobase has an exocyclic amino function, said function is protected by protecting group which is labile to acids but stable to weak to medium bases in the presence of thiol.

Abstract: This application relates to monomers of the general formula (I) for the preparation of PNA (peptide nucleic acid) oligomers and provides method for the synthesis of both predefined sequence PNA oligomers and random sequence PNA oligomers: wherein E is nitrogen or C—R?; J is sulfur or oxygen; R?, R1, R2, R3, R4 is independently H, halogen, alkyl, nitro, nitrite, alkoxy, halogenated alkyl, halogenated alkoxy, phenyl or halogenated phenyl, R5 is H or protected or unprotected side chain of natural or unnatural ?-amino acid; and B is a natural or unnatural nucleobase, wherein when said nucleobase has an exocyclic amino function, said function is protected by protecting group which is labile to acids but stable to weak to medium bases in the presence of thiol.

Abstract: An apparatus and a method for estimating a channel in a broadband wireless access system. A receiving apparatus includes a first channel estimation filter having a tap coefficient which is channel-adaptively variable, the first channel estimation filter acquiring a channel impulse response by filtering received pilot symbols, a second channel estimation filter having a fixed tap coefficient, the second channel estimation filter acquiring a channel impulse response by filtering received pilot symbols, and a selector which selects the operation of one of the first and the second channel estimation filters according to channel correlativity.