Patents by Inventor Jaehwan Eun

Jaehwan Eun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing film structure comprising ferroelectric single crystal layer
    Patent number: 7527704
    Abstract: A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate.
    Type: Grant
    Filed: July 14, 2003
    Date of Patent: May 5, 2009
    Assignee: Ibule Photonics, Inc.
    Inventors: Jaehwan Eun, Sang-Goo Lee, Byungju Choi, Sungmin Rhim
  • Method for preparation of ferroelectric single crystal film structure using deposition method
    Patent number: 7399356
    Abstract: A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD).
    Type: Grant
    Filed: July 14, 2003
    Date of Patent: July 15, 2008
    Assignee: Ibule Photonics, Inc.
    Inventors: Jaehwan Eun, Sang-Goo Lee, Hyeongjoon Kim, Minchan Kim
  • Method for preparating film structure comprising ferroelectric single crystal layer
    Publication number: 20060207713
    Abstract: A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate.
    Type: Application
    Filed: July 14, 2003
    Publication date: September 21, 2006
    Inventors: Jaehwan Eun, Sang-Goo Lee, Byungju Choi, Sungmin Rhim
  • Method for preparation of ferroelectric single crystal film structure using deposition method
    Publication number: 20060042541
    Abstract: A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD).
    Type: Application
    Filed: July 14, 2003
    Publication date: March 2, 2006
    Inventors: Jaehwan Eun, Sang-Goo Lee, Hyeongjoon Kim, Minchan Kim