Abstract: A memory system includes: a memory apparatus suitable for providing read data; and a plurality of equalizing units respectively suitable for rotationally performing equalization operations to the read data in different directions in a two-dimensional inter-symbol interference (2D ISI) mask, wherein the 2D ISI mask comprises the read data of a victim cell and a plurality of interference data, which exert interferential influence on the read data, of interference cells neighboring the victim cell, and wherein a first one of the equalizing units generates a first equalization information by performing the equalization operation to the read data in a first one of the different directions based on a third equalization information received from a third one of the equalizing units, and provides the generated first equalization information to a second one of the equalizing units.

Abstract: A method for estimating channel characteristics of a nonvolatile memory device including a plurality of memory cells includes the steps of: calculating first threshold voltage distributions of the memory cells programmed according to input data, based on the input data and a physical structure of the memory cells; calculating second threshold voltage distributions of the memory cells, based on output data and the physical structure of the memory cells; and analyzing the relation between the first and second threshold voltage distributions, using a mask.

Abstract: A method for estimating channel characteristics of a nonvolatile memory device including a plurality of memory cells includes the steps of: calculating first threshold voltage distributions of the memory cells programmed according to input data, based on the input data and a physical structure of the memory cells; calculating second threshold voltage distributions of the memory cells, based on output data and the physical structure of the memory cells; and analyzing the relation between the first and second threshold voltage distributions, using a mask.