Abstract: A flue gas cleaning solution purification system includes: a scrubber for removing contaminants from flue gas by using a cleaning solution; a cleaning solution purification unit for purifying the contaminated cleaning solution discharged from the scrubber; a cleaning solution resupply unit for resupplying the cleaning solution having been purified by the cleaning solution purification unit to the scrubber; and a sludge treatment unit for treating and storing sludge discharged from the cleaning solution purification unit, wherein the cleaning solution purification unit includes: a circulation buffer tank for temporarily storing the discharged contaminated cleaning solution; a coagulant supply apparatus for supplying a coagulant which coagulates contaminants of the contaminated cleaning solution discharged from the scrubber; a settling apparatus for primarily purifying the contaminated cleaning solution discharged from the scrubber by enabling settling of the contaminants; and a filtering apparatus for secondar

Abstract: A touch sensor may include a substrate and may include electrode units, first demultiplexers, second demultiplexers, and driving pads all located on the substrate. The electrode units each may include a plurality of electrode groups, the electrode groups each including a plurality of touch electrodes. The first demultiplexers each may include a plurality of sub-demultiplexers and each may be electrically connected to a corresponding one of the electrode units. Each of the sub-demultiplexers of a first demultiplexer may be electrically connected to a corresponding one of the electrode groups of a corresponding electrode unit. The second demultiplexers may be connected between the first demultiplexers and the driving pads.

Abstract: A power semiconductor device may include: a first conductive type drift layer in which trench gates are formed; a second conductive type well region formed on the drift layer so as to contact the trench gate; a first conductive type source region formed on the well region so as to contact the trench gate; and a device protection region formed below a height of a lowermost portion of the source region in a height direction.

Abstract: A power semiconductor device may include a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region formed in an upper inner side of the second semiconductor region; a trench gate formed to penetrate through a portion of the first semiconductor region from the third semiconductor region; and a first conductivity type fourth semiconductor region formed below the second semiconductor region while being spaced apart from the trench gate.

Abstract: A power semiconductor device may include: an active region having a channel formed therein when the power semiconductor device is turned on, the channel allowing a current to flow therethrough; a termination region formed around the active region; first trenches formed in the active region, each first trench having an insulating layer formed on a surface thereof and filled with a conductive material; and second trenches formed in the termination region, each second trench having an insulating layer formed on a surface thereof and filled with a conductive material.

Abstract: A power semiconductor device may include: a first conductivity-type first semiconductor region; a resurf region disposed in the first semiconductor region and including first conductivity-type second semiconductor regions and second conductivity-type third semiconductor regions alternately disposed in a width direction; a first conductivity-type first cover region disposed in the first semiconductor region, disposed to be contiguous with an upper surface of the resurf region, and having an impurity concentration higher than that of the first semiconductor region; a second conductivity-type fourth semiconductor region disposed above the first semiconductor region; a first conductivity-type fifth semiconductor region disposed on an inner side of an upper portion of the fourth semiconductor region; and a trench gate disposed to penetrate from the fifth semiconductor region to a portion of an upper portion of the first semiconductor region and including a gate insulating layer and a conductive material.

Abstract: A diode device may include a first conductivity type first semiconductor region, a second conductivity type second semiconductor region partially formed inside an upper portion of the first semiconductor region, and second conductivity type third semiconductor regions partially formed inside the upper portion of the first semiconductor region, formed on sides of the second semiconductor region, and having an impurity concentration higher than that of the second semiconductor region.

Abstract: A diode device may include: a first semiconductor area having a first conductivity type; a second semiconductor area having a second conductivity type, provided on the first semiconductor area and having a uniform impurity density; a trench provided to pass through the second semiconductor area to contact the first semiconductor area; and a first metal layer provided on surfaces of the trench and the second semiconductor area.

Abstract: A power semiconductor device may include: a first semiconductor layer having a first conductivity type; a second semiconductor layer formed on the first semiconductor layer, having a concentration of impurities higher than that of the first semiconductor layer, and having the first conductivity type; a third semiconductor layer formed on the second semiconductor layer and having a second conductivity type; a fourth semiconductor layer formed in an upper surface of the third semiconductor layer and having the first conductivity type; and trench gates penetrating from the fourth semiconductor layer into a portion of the first semiconductor layer and having gate insulating layers formed on surfaces thereof. The trench gates have a first gate, a second gate, and a third gate are sequentially disposed from a lower portion thereof, and the first gate, the second gate, and the third gate are insulated from each other by gate insulating films.

Abstract: A power semiconductor device may include a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region formed in an upper inner side of the second semiconductor region; a trench gate formed to penetrate through a portion of the first semiconductor region from the third semiconductor region; and a first conductivity type fourth semiconductor region formed below the second semiconductor region while being spaced apart from the trench gate.

Abstract: A power semiconductor device may include: a first conductive type drift layer in which trench gates are formed; a second conductive type well region formed on the drift layer so as to contact the trench gate; a first conductive type source region formed on the well region so as to contact the trench gate; and a device protection region formed below a height of a lowermost portion of the source region in a height direction.