Abstract: Disclosed are a method of manufacturing a microstructure array that includes preparing a mold having a concave micro pattern array in which a plurality of concave micro patterns are arranged, preparing a perovskite precursor solution including a perovskite precursor and a hydrophilic polymer, coating the perovskite precursor solution on a substrate, disposing the mold on the perovskite precursor solution to confine the perovskite precursor solution in the plurality of concave micro patterns, obtaining a composite of perovskite nanocrystals and the hydrophilic polymer from the perovskite precursor solution in the plurality of concave micro patterns, and, and removing the mold to form a microstructure array in which a plurality of microstructures including a composite of the perovskite nanocrystals and the hydrophilic polymer are arranged, a microstructure array, a micro light emitting diode including the same, and a manufacturing method thereof, and a display device.

Abstract: Disclosed are a method of manufacturing a microstructure array that includes preparing a mold having a concave micro pattern array in which a plurality of concave micro patterns are arranged, preparing a perovskite precursor solution including a perovskite precursor and a hydrophilic polymer, coating the perovskite precursor solution on a substrate, disposing the mold on the perovskite precursor solution to confine the perovskite precursor solution in the plurality of concave micro patterns, obtaining a composite of perovskite nanocrystals and the hydrophilic polymer from the perovskite precursor solution in the plurality of concave micro patterns, and, and removing the mold to form a microstructure array in which a plurality of microstructures including a composite of the perovskite nanocrystals and the hydrophilic polymer are arranged, a microstructure array, a micro light emitting diode including the same, and a manufacturing method thereof, and a display device.

Abstract: Provided are a light-emitting diode and a method of fabricating the same. The light-emitting diode includes a first electrode; a P-type zinc oxide layer which is formed on the first electrode and comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity; an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer; and a second electrode, which is formed on the N-type zinc oxide layer.

Abstract: Provided are a light-emitting diode and a method of fabricating the same. The light-emitting diode includes a first electrode; a P-type zinc oxide layer which is formed on the first electrode and comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity; an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer; and a second electrode, which is formed on the N-type zinc oxide layer.

Abstract: A method of manufacturing antireflective coating for solar cell having a moth-eye structure and a solar cell including the same are provided to greatly reduce reflectivity by forming an antireflective coating layer having a moth-eye structure on an upper electrode layer of the solar cell using a bottom-up method. A bottom electrode layer is formed on a substrate. A photoreactive layer is formed on the bottom electrode layer. The photoreactive layer is made of CIS (Copper, Indium, Selenide) materials. A buffer layer is formed on the photoreactive layer. A ZnO layer is formed on the buffer layer. A top electrode layer is formed on the ZnO layer.

Abstract: A glass of the present invention includes a first layer having a porous structure of nanoscale pores which are etched by an etchant that is a substitute for hydrofluoric acid (HF) or fluoride such that HF or fluoride is not used as the etchant, and a second layer which is not etched by the etchant. The glass is effectively applied to various applications requiring high light transmission such as a protective filter for a display device, a solar cell, a mobile communication device, glass of a building structure, and an optical element lens.

Abstract: A glass substrate manufacturing method of the present invention comprises forming a multi-porous structure layer which comprises nano-size pores at a surface of a glass substrate by etching the surface of the glass substrate with hydrofluoric (HF) acid or an etchant substituting for fluoride. Unlike related art methods, the glass substrate forms no additional coating layer, uses no harmful chemical material, and is given anti-reflection, anti-fogging, and super-hydrophilic characteristics through a simple process at a relatively low temperature. The glass substrate is effectively applied to various applications requiring high light transmission such as a protective filter for a display device, a solar cell, a mobile communication device, glass of a building structure, and an optical element lens.

Abstract: A self-powered generator is provided. The generator includes a piezoelectric nanorod member layer that includes a first layer; a second layer; and a plurality of piezoelectric nanorods disposed between the first and second layers. The piezoelectric nanorod is a biaxially-grown nanorod. When mechanical energy is applied from an outside, an upper half and a lower half of each of the plurality of piezoelectric nanorods generate piezoelectric potentials having opposite polarities, the upper half and the lower half being on both sides of a longitudinal axis along an axis perpendicular to the longitudinal axis.

Abstract: A method of manufacturing antireflective coating for solar cell having a moth-eye structure and a solar cell including the same are provided to greatly reduce reflectivity by forming an antireflective coating layer having a moth-eye structure on an upper electrode layer of the solar cell using a bottom-up method. A bottom electrode layer is formed on a substrate. A photoreactive layer is formed on the bottom electrode layer. The photoreactive layer is made of CIS (Copper, Indium, Selenide) materials. A buffer layer is formed on the photoreactive layer. A ZnO layer is formed on the buffer layer. A top electrode layer is formed on the ZnO layer.

Abstract: A glass substrate manufacturing method of the present invention comprises forming a multi-porous structure layer which comprises nano-size pores at a surface of a glass substrate by etching the surface of the glass substrate with hydrofluoric (HF) acid or an etchant substituting for fluoride. Unlike related art methods, the glass substrate forms no additional coating layer, uses no harmful chemical material, and is given anti-reflection, anti-fogging, and super-hydrophilic characteristics through a simple process at a relatively low temperature. The glass substrate is effectively applied to various applications requiring high light transmission such as a protective filter for a display device, a solar cell, a mobile communication device, glass of a building structure, and an optical element lens.

Abstract: A method of manufacturing a nano device by directly printing a plurality of NW devices in a desired shape on a predesigned gate substrate. The method includes preparing an NW solution, preparing a building block for performing decaling onto the substrate by carrying an NW device, forming the NW device by connecting electrodes of each of building block units of the building block using NWs by dropping the NW solution between the electrodes and then through dielectrophoresis, visually inspecting the numbers of NW bridges that are formed between the electrodes of each of the building block units through the dielectrophoresis, grouping the building block units according to the numbers, and decaling the NW device formed on each of the building block units onto the gate substrate by bringing the grouped building block units into contact with the predesigned gate substrate and then detaching the grouped building block units.

Abstract: A method for patterning nanowires on a substrate. The method includes procedures of preparing a substrate having a patterned sacrificial layer of barium fluoride thereon; growing nanowires on an entire surface of the resultant substrate including the patterned sacrificial layer; and removing the patterned sacrificial layer using a solvent to remove part of the nanowires on the patterned sacrificial layer such that part of the nanowires in direct contact with the substrate remains on the substrate to thereby form a nanowire pattern.

Abstract: A method of manufacturing a nano device by directly printing a plurality of NW devices in a desired shape on a predesigned gate substrate. The method includes preparing an NW solution, preparing a building block for performing decaling onto the substrate by carrying an NW device, forming the NW device by connecting electrodes of each of building block units of the building block using NWs by dropping the NW solution between the electrodes and then through dielectrophoresis, visually inspecting the numbers of NW bridges that are formed between the electrodes of each of the building block units through the dielectrophoresis, grouping the building block units according to the numbers, and decaling the NW device formed on each of the building block units onto the gate substrate by bringing the grouped building block units into contact with the predesigned gate substrate and then detaching the grouped building block units.

Abstract: According to an exemplary embodiment of the present invention, a diffusion tube includes a diffusion housing which includes a first cavity within a first end which receives a diffusion target, a second cavity within a second end which receives a dopant source for diffusion, and a diffusion port disposed between the diffusion target and the dopant source, wherein the diffusion port provides fluid communication between the first cavity and the second cavity.

Abstract: A method for patterning nanowires on a substrate. The method includes procedures of preparing a substrate having a patterned sacrificial layer of barium fluoride thereon; growing nanowires on an entire surface of the resultant substrate including the patterned sacrificial layer; and removing the patterned sacrificial layer using a solvent to remove part of the nanowires on the patterned sacrificial layer such that part of the nanowires in direct contact with the substrate remains on the substrate to thereby form a nanowire pattern.

Abstract: According to an exemplary embodiment of the present invention, a diffusion tube includes a diffusion housing which includes a first cavity within a first end which receives a diffusion target, a second cavity within a second end which receives a dopant source for diffusion, and a diffusion port disposed between the diffusion target and the dopant source, wherein the diffusion port provides fluid communication between the first cavity and the second cavity.

Abstract: A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

Abstract: A 3 group-5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.