Abstract: A method of programming a three-dimensional semiconductor memory device includes applying a first word line programming voltage to a selected word line among the word lines, floating unselected word lines among the word lines, and applying a back-gate pass voltage to the back-gate electrode; applying a first word line verification voltage to the selected word line, applying a word line pass voltage to the unselected word lines, and applying a first back-gate verification voltage to the back-gate electrode; applying a second word line programming voltage to the selected word line, floating the unselected word lines, and applying the back-gate pass voltage to the back-gate electrode; and applying a second word line verification voltage to the selected word line, applying the word line pass voltage to the unselected word lines, and applying a second back-gate verification voltage to the back-gate electrode.

Abstract: The present disclosure relates to an LED display device, and more particularly, to an LED display device including a repair structure for a deteriorated pixel. In the present disclosure, a subLED electrically connected to first and second connecting electrodes for applying a voltage to a LED is disposed on a deteriorated LED. Thus, deterioration of a display quality due to a deteriorated pixel is prevented. Since it is not required to remove a deteriorated LED, a fabrication cost is reduced and a process efficiency is improved.

Abstract: Disclosed is an erase operation method of a semiconductor memory device which includes a cell string disposed between a bit line and a common source line and connected with a plurality of word lines. The operation method includes precharging a channel of the cell string by applying a ground voltage to the bit line and applying a pass voltage to the word lines, and generating a gate induced drain current (GIDL) current by applying an erase voltage to the bit line and the pass voltage to the word lines, and the pass voltage is greater than the ground voltage, and the erase voltage is greater than the pass voltage.

Abstract: A three dimensional semiconductor device is disclosed. The tree dimensional semiconductor device includes a word line stack over a substrate and a channel pillar structure passing through the word line stack in a vertical direction perpendicular to a top surface of the substrate. The channel pillar structure includes a channel structure. The channel structure includes a blocking layer, a trap layer, a tunneling layer, a channel layer, a filling layer, and a back gate electrode. The channel structure has a pillar shape.

Abstract: An LED display apparatus with a simplified manufacturing process is provided. The LED display apparatus includes a common electrode layer on a first substrate, a second substrate including a first pixel driving device and a second pixel driving device, and a first light emitting device and a second light emitting device on the common electrode layer. The first light emitting device includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second light emitting device includes a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer. As such, it is possible to provide an LED display apparatus with improved manufacturing reliability having at least one unit pixel composed of pixels by using at least one light emitting device integrated with the common electrode layer and at least two individual light emitting devices.

Abstract: The present disclosure relates to an LED display device, and more particularly, to an LED display device including a repair structure for a deteriorated pixel. In the present disclosure, a subLED electrically connected to first and second connecting electrodes for applying a voltage to a LED is disposed on a deteriorated LED. Thus, deterioration of a display quality due to a deteriorated pixel is prevented. Since it is not required to remove a deteriorated LED, a fabrication cost is reduced and a process efficiency is improved.

Abstract: A liquid crystal display device includes a liquid crystal panel; and a backlight unit disposed under the liquid crystal panel and including an LED assembly, wherein the LED assembly includes a frame portion, LED chips arranged in the frame portion in a line and spaced apart from each other, connecting portions each disposed between adjacent LED chips and connected to adjacent LED chips through wire bonding, and a sealing portion including a fluorescent substance and covering the LED chips and the connecting portions, and wherein the sealing portion changes light emitted from the LED chips into a linear light source.

Abstract: A liquid crystal display device includes a liquid crystal panel; and a backlight unit disposed under the liquid crystal panel and including an LED assembly, wherein the LED assembly includes a frame portion, LED chips arranged in the frame portion in a line and spaced apart from each other, connecting portions each disposed between adjacent LED chips and connected to adjacent LED chips through wire bonding, and a sealing portion including a fluorescent substance and covering the LED chips and the connecting portions, and wherein the sealing portion changes light emitted from the LED chips into a linear light source.