Abstract: A memory system includes a storage device and a host device. The storage device includes a memory device and a device controller. The device controller is configured to store device information. The device information includes a level of a power supply voltage required for the memory device. The host device includes a host controller and a power management integrated circuit (PMIC). The host device is configured to send a query command to receive the device information from the device controller during a power setting period. The PMIC is configured to supply a first level of power supply voltage to the memory device during the power setting period and, after the power setting period, selectively supply one of the first level of power supply voltage and a second level of power supply voltage to the memory device. The first level of power supply voltage is lower than the second level of power supply voltage.

Abstract: A memory system includes a storage device and a host device. The storage device includes a memory device and a device controller. The device controller is configured to store device information. The device information includes a level of a power supply voltage required for the memory device. The host device includes a host controller and a power management integrated circuit (PMIC). The host device is configured to send a query command to receive the device information from the device controller during a power setting period. The PMIC is configured to supply a first level of power supply voltage to the memory device during the power setting period and, after the power setting period, selectively supply one of the first level of power supply voltage and a second level of power supply voltage to the memory device. The first level of power supply voltage is lower than the second level of power supply voltage.

Abstract: A storage device includes a nonvolatile memory and a connector configured to connect the storage device to a host. The connector includes a detection terminal that provides a detection voltage to the host, a sensing resistor electrically connected to the detection terminal and having a resistance value that determines the level of the detection voltage, and a power supply terminal that receives a power supply voltage from the host, wherein the power supply voltage is selected by the host in response to the detection voltage.

Abstract: A storage device includes a nonvolatile memory and a connector configured to connect the storage device to a host. The connector includes a detection terminal that provides a detection voltage to the host, a sensing resistor electrically connected to the detection terminal and having a resistance value that determines the level of the detection voltage, and a power supply terminal that receives a power supply voltage from the host, wherein the power supply voltage is selected by the host in response to the detection voltage.

Abstract: An error correction code block including dual-syndrome generators, which may process a plurality of successive code word without latency, is configured to calculate syndrome values of a corresponding even numbered codeword among the plurality of code words by using one of the dual-syndrome generators, and is configured to calculate syndrome values of a corresponding odd numbered codeword among the plurality of code words by using the other of the dual-syndrome generators.

Abstract: A memory controller and an operating method of the memory controller are provided. The operating method includes: performing error correction on data, including a plurality of chunks, in a unit of a chunk; determining if a coefficient of each term of which a degree is equal to or greater than a degree of a reference-degree term, in an error location polynomial for a last chunk among the plurality of chunks, is all zero; and controlling an output time of an error-corrected first chunk based on a result of the determining.

Abstract: A decoder, a method of decoding and systems implementing the same are disclosed. In one example, the method includes calculating syndrome values from input codewords, generating an error location polynomial about the codewords using the syndrome values, determining an error count in the codewords using the error location polynomial, and adjusting power consumption of a circuit in response to the determined error count in the codewords. In one example, a frequency of a clock signal to be provided to a search circuit may be determined based on the error count, and the clock signal may be provided having the determined frequency to a search circuit, such as a Chien search circuit.

Abstract: A memory controller and an operating method of the memory controller are provided. The operating method includes: performing error correction on data, including a plurality of chunks, in a unit of a chunk; determining if a coefficient of each term of which a degree is equal to or greater than a degree of a reference-degree term, in an error location polynomial for a last chunk among the plurality of chunks, is all zero; and controlling an output time of an error-corrected first chunk based on a result of the determining.

Abstract: Provided are a flash memory device and a reading method of the flash memory device. A multi-level cell flash memory device includes: a memory cell array comprising main memory cells storing main data, and indicator cells storing indicate data indicating one of a first mode and a second mode in which the main data of the main memory cell, to which the indicate cells correspond, is written; and an output unit outputting in response to a control signal corresponding to the indicate data, one of main data read from the memory cell array and forced data forcing some bit values of the main data to bit values of mode specific data, as reading data.

Abstract: An error correction code block including dual-syndrome generators, which may process a plurality of successive code word without latency, is configured to calculate syndrome values of a corresponding even numbered codeword among the plurality of code words by using one of the dual-syndrome generators, and is configured to calculate syndrome values of a corresponding odd numbered codeword among the plurality of code words by using the other of the dual-syndrome generators.

Abstract: A decoder, a method of decoding and systems implementing the same are disclosed. In one example, the method includes calculating syndrome values from input codewords, generating an error location polynomial about the codewords using the syndrome values, determining an error count in the codewords using the error location polynomial, and adjusting power consumption of a circuit in response to the determined error count in the codewords. In one example, a frequency of a clock signal to be provided to a search circuit may be determined based on the error count, and the clock signal may be provided having the determined frequency to a search circuit, such as a Chien search circuit.

Abstract: Provided are a flash memory device and a reading method of the flash memory device. A multi-level cell flash memory device includes: a memory cell array comprising main memory cells storing main data, and indicator cells storing indicate data indicating one of a first mode and a second mode in which the main data of the main memory cell, to which the indicate cells correspond, is written; and an output unit outputting in response to a control signal corresponding to the indicate data, one of main data read from the memory cell array and forced data forcing some bit values of the main data to bit values of mode specific data, as reading data.

Abstract: In a method of driving a nonvolatile memory device a first data state is determined from among the plurality of data states. The number of simultaneously programmed bits is set according to the determined first data state and a scanning operation is performed on data input from an external device to search data bits to be programmed. The searched data bits are programmed in response to the number of simultaneously programmed bits. The number of simultaneously programmed bits corresponding to the first data state is different from a number of simultaneously programmed bits corresponding to at least a second of the plurality of data states.

Abstract: A method of programming a selected cell in a multi-level flash memory device comprises determining whether to program an upper bit or a lower bit of a selected memory cell, detecting a current logic state of two bits of data stored in the selected memory cell, determining a target logic state for the upper or lower bit, generating a program voltage and a verify voltage for programming the upper or lower bit to the target logic state, and applying the program voltage and the verify voltage to a word line connected to the selected memory cell.

Abstract: A method of programming a selected cell in a multi-level flash memory device comprises determining whether to program an upper bit or a lower bit of a selected memory cell, detecting a current logic state of two bits of data stored in the selected memory cell, determining a target logic state for the upper or lower bit, generating a program voltage and a verify voltage for programming the upper or lower bit to the target logic state, and applying the program voltage and the verify voltage to a word line connected to the selected memory cell.

Abstract: In a method of driving a nonvolatile memory device a first data state is determined from among the plurality of data states. The number of simultaneously programmed bits is set according to the determined first data state and a scanning operation is performed on data input from an external device to search data bits to be programmed. The searched data bits are programmed in response to the number of simultaneously programmed bits. The number of simultaneously programmed bits corresponding to the first data state is different from a number of simultaneously programmed bits corresponding to at least a second of the plurality of data states.

Abstract: A method of programming a selected cell in a multi-level flash memory device comprises determining whether to program an upper bit or a lower bit of a selected memory cell, detecting a current logic state of two bits of data stored in the selected memory cell, determining a target logic state for the upper or lower bit, generating a program voltage and a verify voltage for programming the upper or lower bit to the target logic state, and applying the program voltage and the verify voltage to a word line connected to the selected memory cell.

Abstract: A method of programming a selected cell in a multi-level flash memory device comprises determining whether to program an upper bit or a lower bit of a selected memory cell, detecting a current logic state of two bits of data stored in the selected memory cell, determining a target logic state for the upper or lower bit, generating a program voltage and a verify voltage for programming the upper or lower bit to the target logic state, and applying the program voltage and the verify voltage to a word line connected to the selected memory cell.