Abstract: A circuit board according to an embodiment includes a first insulating layer; a second insulating layer disposed on the first insulating layer and including a cavity; and a plurality of pads disposed on the first insulating layer and having top surfaces exposed through the cavity; wherein the cavity of the second insulating layer includes: a bottom surface positioned higher than a top surface of the first insulating layer; and an inner wall extending from the bottom surface, wherein the inner wall is perpendicular to top or bottom surface of the second insulating layer, wherein the bottom surface of the cavity includes: a first bottom surface positioned lower than a top surface of the pad and positioned outside an arrangement region of the plurality of pads; and a second bottom surface positioned lower than the top surface of the pad and positioned inside the arrangement region of the plurality of pads, and wherein a height of the first bottom surface is different from a height of the second bottom surface.

Abstract: An apparatus and method for processing defects in a card-type memory unit such as a flash memory card, which can detect a defective location of the memory unit and replace a memory area having the detected defective location with a different memory area, or ignore it.

Abstract: An enhanced inductively coupled plasma reactor which comprises; a chamber; a power supply for providing radio-frequencies necessary to generate plasma within the chamber; an antenna for producing electric fields and magnetic fields with a radio-frequency power from the power supply to generate plasma within the chamber; Helmholtz coils for shaking the plasma with intermittent modulation of a weak magnetic field to increase the density of the plasma and decrease the electron temperature and enhance the uniformity of the plasma, the Helmholtz coils consisting of two coils which are symmetrically arranged with a common axis, winding around the chamber at an upper position and a lower position, respectively, the weak magnetic field being produced by providing a combination of a direct current and an alternating current to the Helmholtz coils; a wafer stage and support; a bias RF power supply for controlling ion energies, connected to the wafer stage; and a matching box for optimally controlling and transferring t