Patents by Inventor Jaesuk KWON

Jaesuk KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic memory device comprising oxide patterns
    Patent number: 9893272
    Abstract: A method of fabricating a magnetic memory device is provided. The method may include sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a mask pattern on the second magnetic layer to expose a portion of the second magnetic layer, forming a capping insulating layer on a sidewall of the mask pattern and the portion of the second magnetic layer, injecting an oxygen ion into the portion of the second magnetic layer through the capping insulating layer to form an oxide layer, anisotropically etching the capping insulating layer to form a capping spacer, and patterning the oxide layer, the tunnel barrier layer, and the first magnetic layer using the mask pattern and the capping spacer.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: February 13, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shin-Jae Kang, Jongchul Park, Byoungjae Bae, Jaesuk Kwon, Hyunsoo Shin
  • MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20160035969
    Abstract: A method of fabricating a magnetic memory device is provided. The method may include sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a mask pattern on the second magnetic layer to expose a portion of the second magnetic layer, forming a capping insulating layer on a sidewall of the mask pattern and the portion of the second magnetic layer, injecting an oxygen ion into the portion of the second magnetic layer through the capping insulating layer to form an oxide layer, anisotropically etching the capping insulating layer to form a capping spacer, and patterning the oxide layer, the tunnel barrier layer, and the first magnetic layer using the mask pattern and the capping spacer.
    Type: Application
    Filed: May 4, 2015
    Publication date: February 4, 2016
    Inventors: Shin-Jae KANG, JONGCHUL PARK, BYOUNGJAE BAE, Jaesuk KWON, Hyunsoo SHIN