Abstract: A semiconductor memory device and a method of operating the semiconductor memory device are provided. The semiconductor memory device includes a memory cell array including a plurality of memory blocks; a peripheral circuit performing a program operation or a read operation on a selected memory block from among the plurality of memory blocks; a temperature measurement circuit performing a temperature measurement operation to measure a first temperature during the program operation and a second temperature during the read operation; and a block read counter deriving a read count increment of the selected memory block based on the first temperature and the second temperature and updating a read count value of the selected memory block based on the read count value and the derived read count increment.

Abstract: A printed circuit board includes: a first insulating layer; a first metal layer disposed on one surface of the first insulating layer; a second metal layer disposed on the other surface facing the one surface of the first insulating layer; a via penetrating through the first insulating layer to connect the first and second metal layers to each other; and a heterogeneous metal region disposed in at least one of an area in which the via is adjacent to the first insulating layer and an area in which the via is adjacent to the first metal layer, and including a material different from that of the via, wherein the heterogeneous metal region includes at least one of nickel (Ni), silicon (Si), and titanium (Ti).

Abstract: A connection structure-embedded substrate includes: a printed circuit board including a plurality of first insulating layers of which at least one has a cavity provided therein, a plurality of first wiring layers disposed as at least one of an outer portion and an inner portion of the plurality of first insulating layers, and a first build-up insulating layer disposed on an upper surface of the plurality of first insulating layers; and a connection structure at least partially disposed in the cavity. The first build-up insulating layer is disposed in the cavity, and each of a lower surface of the connection structure and a lower surface of the cavity is in contact with at least a portion of the first build-up insulating layer, respectively.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device may include: a memory block including upper pages, a center page, and lower pages; a peripheral circuit configured to perform a read operation on the memory block; and a control logic configured to control the peripheral circuit to perform the read operation and control the peripheral circuit such that, during the read operation, based on a location of a selected page among the plurality of pages, a pass voltage to be applied to first adjacent pages disposed adjacent to the selected page in a first direction differs from a pass voltage to be applied to second adjacent pages disposed adjacent to the selected page in a second direction.

Abstract: A printed circuit board includes: a first insulating layer; a first metal layer disposed on one surface of the first insulating layer; a second metal layer disposed on the other surface facing the one surface of the first insulating layer; a via penetrating through the first insulating layer to connect the first and second metal layers to each other; and a heterogeneous metal region disposed in at least one of an area in which the via is adjacent to the first insulating layer and an area in which the via is adjacent to the first metal layer, and including a material different from that of the via, wherein the heterogeneous metal region includes at least one of nickel (Ni), silicon (Si), and titanium (Ti).

Abstract: A connection structure-embedded substrate includes: a printed circuit board including a plurality of first insulating layers of which at least one has a cavity provided therein, a plurality of first wiring layers disposed as at least one of an outer portion and an inner portion of the plurality of first insulating layers, and a first build-up insulating layer disposed on an upper surface of the plurality of first insulating layers; and a connection structure at least partially disposed in the cavity. The first build-up insulating layer is disposed in the cavity, and each of a lower surface of the connection structure and a lower surface of the cavity is in contact with at least a portion of the first build-up insulating layer, respectively.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device may include: a memory block including upper pages, a center page, and lower pages; a peripheral circuit configured to perform a read operation on the memory block; and a control logic configured to control the peripheral circuit to perform the read operation and control the peripheral circuit such that, during the read operation, based on a location of a selected page among the plurality of pages, a pass voltage to be applied to first adjacent pages disposed adjacent to the selected page in a first direction differs from a pass voltage to be applied to second adjacent pages disposed adjacent to the selected page in a second direction.

Abstract: Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of cell strings, a peripheral circuit, and control logic. Each of the cell strings includes a drain select transistor, a source select transistor, and a plurality of memory cells that are coupled in series between the drain select transistor and the source select transistor. The peripheral circuit may be configured to perform a program operation and a program verify operation on a cell string that is selected from among the plurality of cell strings. The control logic may be configured to control the peripheral circuit to boost a channel voltage of at least one unselected cell string, among the plurality of cell strings, based on a comparison between a degree of progress of the program operation and a reference degree of progress during the program verify operation.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device may include: a memory block including upper pages, a center page, and lower pages; a peripheral circuit configured to perform a read operation on the memory block; and a control logic configured to control the peripheral circuit to perform the read operation and control the peripheral circuit such that, during the read operation, based on a location of a selected page among the plurality of pages, a pass voltage to be applied to first adjacent pages disposed adjacent to the selected page in a first direction differs from a pass voltage to be applied to second adjacent pages disposed adjacent to the selected page in a second direction.

Abstract: Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of cell strings, a peripheral circuit, and control logic. Each of the cell strings includes a drain select transistor, a source select transistor, and a plurality of memory cells that are coupled in series between the drain select transistor and the source select transistor. The peripheral circuit may be configured to perform a program operation and a program verify operation on a cell string that is selected from among the plurality of cell strings. The control logic may be configured to control the peripheral circuit to boost a channel voltage of at least one unselected cell string, among the plurality of cell strings, based on a comparison between a degree of progress of the program operation and a reference degree of progress during the program verify operation.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device may include: a memory block including upper pages, a center page, and lower pages; a peripheral circuit configured to perform a read operation on the memory block; and a control logic configured to control the peripheral circuit to perform the read operation and control the peripheral circuit such that, during the read operation, based on a location of a selected page among the plurality of pages, a pass voltage to be applied to first adjacent pages disposed adjacent to the selected page in a first direction differs from a pass voltage to be applied to second adjacent pages disposed adjacent to the selected page in a second direction.

Abstract: A board having an electronic component embedded therein, includes a core layer having a groove with a bottom surface, an electronic component disposed above the bottom surface of the groove and spaced apart from the bottom surface of the groove, and an insulating layer disposed on the core layer and covering at least a portion of the electronic component. The insulating layer is disposed in at least a portion of a space between the bottom surface of the groove and the electronic component.

Abstract: A board having an electronic component embedded therein, includes a core layer having a groove with a bottom surface, an electronic component disposed above the bottom surface of the groove and spaced apart from the bottom surface of the groove, and an insulating layer disposed on the core layer and covering at least a portion of the electronic component. The insulating layer is disposed in at least a portion of a space between the bottom surface of the groove and the electronic component.

Abstract: An electronic component embedded substrate includes first insulating layer having a first through portion; a first electronic component disposed in the first through portion; a second insulating layer disposed on the first insulating layer and having a second through portion; a second electronic component disposed in the second through portion; and an insulating material covering at least a portion of each of the first electronic component and the second electronic component. The first through portion and the second through portion intersect, such that a portion of the first through portion and a portion of the second through portion overlap each other, on a plane.

Abstract: A substrate-embedded electronic component includes a first core layer, a first through-portion penetrating the first core layer, a first electronic component disposed in the first through-portion, an encapsulant disposed in at least a portion of the first through-portion, and covering at least a portion of the first electronic component, a second core layer disposed on the encapsulant, and a first through-via penetrating the second core layer, wherein the first through-via is connected to the first electronic component.

Abstract: The present invention discloses a charge trap flash memory cell with multi-doped layers at the active region, a memory array using of the memory cell, and an operating method of the same. The charge trap memory cell structure of the present invention is characterized by forming multi-doped layers at the active region appropriately, and it is a difference from the conventional art. The present invention induces electrons to band-to-band tunnel at the PN junction with the source/drain region by the multi-doped layers, and accelerates the electrons at the reverse bias to generate an avalanche phenomenon. Therefore, the method for operating a memory array of the present invention comprises programming by injecting holes which are generated by the avalanche phenomenon into multi-dielectric layers of each memory cells, and erasing by injecting electrons through an F-N tunneling from channels into the multi-dielectric layers of each memory cells.

Abstract: Refrigerator including a freezing chamber (1), a refrigerating chamber (2) at a side of the freezing chamber, a barrier (303) between the freezing chamber and the refrigerating chamber, the barrier having a freezing chamber cold air passage (A) formed therein, a partition plate (7) for compartmentalizing a freezing chamber cold air passage in rear of the freezing chamber where an evaporator (104) is positioned, the evaporator provided in a “” form along the freezing chamber cold air passage (A) and the refrigerating chamber cold air passage (B), a partition wall (9) between the freezing chamber cold air passage and the refrigerating chamber cold air passage, and a fan (305) mounted over the freezing chamber cold air passage and the refrigerating chamber cold air passage for discharging cold air flowing through respective cold air passage (10) to the freezing chamber and the refrigerating chamber respectively, thereby improving a cooling rate of the refrigerating chamber and providing more efficient refrigerat

Abstract: A dual capacity compressor, which can maintain a fixed eccentricity and stable operation, even when the compressor is rotated in both the regular and reverse directions in order to provide multiple compression capacities, is provided. This dual capacity compressor implements an improved key member and associated key member fitting parts to inhibit relative motion of the crank pin and the eccentric sleeve during operation, so as to reduce or eliminate a destabilizing effect due to centrifugal forces on the eccentric sleeve and external forces applied through the connecting rod.

Abstract: A dual capacity compressor, which can maintain a fixed eccentricity and stable operation, even when the compressor is rotated in both the regular and reverse directions in order to provide multiple compression capacities, is provided. This dual capacity compressor implements an improved key member and associated key member fitting parts to inhibit relative motion of the crank pin and the eccentric sleeve during operation, so as to reduce or eliminate a destabilizing effect due to centrifugal forces on the eccentric sleeve and external forces applied through the connecting rod.

Abstract: A dual capacity compressor, which can maintain a fixed eccentricity and stable operation, even when the compressor is rotated in both the regular and reverse directions in order to provide multiple compression capacities, is provided. This dual capacity compressor implements an improved key member and associated key member fitting parts to inhibit relative motion of the crank pin and the eccentric sleeve during operation, so as to reduce or eliminate a destabilizing effect due to centrifugal forces on the eccentric sleeve and external forces applied through the connecting rod.