Abstract: The present disclosure relates to a secondary battery manufacturing system having a multi-packaging unit, in which multiple packaging units of a secondary battery manufacturing facility are provided and a transfer box on which an electrode assembly is accommodated is transferred to each packaging unit by a transfer unit, wherein the secondary battery manufacturing system includes: an electrode supply unit equipped with a plurality of stacking devices for supplying an electrode assembly in which a plurality of battery cells are stacked; a tab-welding unit; at least one packaging unit; at least one temporary buffer; and a transfer unit.

Abstract: The present disclosure relates to a secondary battery manufacturing system in which a packaging unit of a secondary battery manufacturing facility are configured to have multiple packaging units, and having a multipackaging unit such that a transfer box in which an electrode assembly is seated is transferred to each of the packaging units by a transfer unit, and including an electrode supply unit having a plurality of stacking devices supplying an electrode assembly in which a plurality of battery cells are stacked, a tab welding unit, at least one packaging unit, at least one temporary buffer, and a transfer unit.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: Disclosed are a wall-climbing aerial robot mechanism and a method of controlling the same. The method of controlling a wall-climbing aerial robot includes allowing the aerial robot to fly towards a structure, allowing the aerial robot to approach the structure and recognize a wall of the structure, allowing the aerial robot to calculate a trajectory for landing on the wall of the structure, approach the wall of the structure after taking an orientation, and be attached on the wall of the structure, and allowing the aerial robot to move along the wall of the structure to perform a task.

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Abstract: Disclosed are a wall-climbing aerial robot mechanism and a method of controlling the same. The method of controlling a wall-climbing aerial robot includes allowing the aerial robot to fly towards a structure, allowing the aerial robot to approach the structure and recognize a wall of the structure, allowing the aerial robot to calculate a trajectory for landing on the wall of the structure, approach the wall of the structure after taking an orientation, and be attached on the wall of the structure, and allowing the aerial robot to move along the wall of the structure to perform a task.